Results 21 to 30 of about 167,971 (313)

The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiO_X as a Charge Trapping Layer and Indium-Tin-Zinc-Oxide

Nanomaterials, 2019
We fabricated the transparent non-volatile memory (NVM) of a bottom gate thin film transistor (TFT) for the integrated logic devices of display applications.
Joong-Hyun Park, Myung-Hun Shin, Jun-Sin Yi   +2 more
doaj   +1 more source

On the Window Size for Classification in Changing Environments

, 2009
Classification in changing environments (commonly known as concept drift) requires adaptation of the classifier to accommodate the changes. One approach is to keep a moving window on the streaming data and constantly update the classifier on it. Here we
Kuncheva, Ludmila, Zliobaite, Indre
core   +1 more source

Enhancing Charge Trapping Performance of Hafnia Thin Films Using Sequential Plasma Atomic Layer Deposition

Nanomaterials
We aimed to fabricate reliable memory devices using HfO2, which is gaining attention as a charge-trapping layer material for next-generation NAND flash memory.
So-Won Kim, Jae-Hoon Yoo, Won-Ji Park, Chan-Hee Lee, Joung-Ho Lee, Jong-Hwan Kim, Sae-Hoon Uhm, Hee-Chul Lee   +7 more
doaj   +1 more source

Impact of Series-Connected Ferroelectric Capacitor in HfO₂-Based Ferroelectric Field-Effect Transistors for Memory Application

IEEE Journal of the Electron Devices Society, 2020
In this work, we demonstrated a HfO2-based ferroelectric field-effect transistor (FeFET) in series with a HfAlO ferroelectric capacitor for memory application and further investigated the impact of the ferroelectric capacitor with different thicknesses ...
Wei-Dong Liu, Zi-You Huang, Jun Ma, Zhi-Wei Zheng, Chun-Hu Cheng   +4 more
doaj   +1 more source

Nanographene‐Based Heterojunctions for High‐Performance Organic Phototransistor Memory Devices

Advanced Science, 2023
Organic phototransistors can enable many important applications such as nonvolatile memory, artificial synapses, and photodetectors in next‐generation optical communication and wearable electronics.
Shaoling Bai, Lin Yang, Katherina Haase, Jakob Wolansky, Zongbao Zhang, Hsin Tseng, Felix Talnack, Joshua Kress, Jonathan Perez Andrade, Johannes Benduhn, Ji Ma, Xinliang Feng, Mike Hambsch, Stefan C. B. Mannsfeld   +13 more
doaj   +1 more source

Systematic Analysis of Spacer and Gate Length Scaling on Memory Characteristics in 3D NAND Flash Memory

Applied Sciences
This study investigates the impact of oxide/nitride (ON) pitch scaling on the memory performance of 3D NAND flash memory. We aim to enhance 3D NAND flash memory by systematically reducing the spacer length (Ls) and gate length (Lg) to achieve improved ...
Hee Young Bae, Seul Ki Hong, Jong Kyung Park   +2 more
doaj   +1 more source

Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure

Advanced Science, 2022
To address the demands of emerging data‐centric computing applications, ferroelectric field‐effect transistors (Fe‐FETs) are considered the forefront of semiconductor electronics owing to their energy and area efficiency and merged logic–memory ...
Sungpyo Baek, Hyun Ho Yoo, Jae Hyeok Ju, Panithan Sriboriboon, Prashant Singh, Jingjie Niu, Jin‐Hong Park, Changhwan Shin, Yunseok Kim, Sungjoo Lee   +9 more
doaj   +1 more source

Continuous Nearest Neighbor Queries over Sliding Windows [PDF]

, 2007
—This paper studies continuous monitoring of nearest neighbor (NN) queries over sliding window streams. According to this model, data points continuously stream in the system, and they are considered valid only while they belong to a sliding window that ...
Papadias, Dimitris, Dimitris Papadias, Kyriakos Mouratidis, MOURATIDIS, Kyriakos   +3 more
core   +1 more source

Pitch memory, labeling and disembedding in autism

, 2003
Background: Autistic musical savants invariably possess absolute pitch ability and are able to disembed individual musical tones from chords. Enhanced pitch discrimination and memory has been found in non-savant individuals with autism who also show ...
Heaton, Pam F.
core   +1 more source

Gate Engineering Effect in Ferroelectric Field‐Effect Transistors with Al‐Doped HfO2 Thin Film and Amorphous Indium‐Gallium‐Zinc‐Oxide Channel

Advanced Electronic Materials
This work investigates the mechanism for the memory window (MW) suppression of the ferroelectric‐thin film transistors (FETFTs) with an amorphous indium‐gallium‐zinc (a‐IGZO) channel.
Jae Hoon Lee, Yonghee Lee, Joon‐Kyu Han, Kyung Do Kim, Seung Ryong Byun, Hyeon Woo Park, Cheol Seong Hwang   +6 more
doaj   +1 more source