Results 31 to 40 of about 2,144,114 (251)

Memory Window Enhancement With Germanium-Incorporated Charge Trap Layer in Flash Memory Device

open access: yesIEEE Journal of the Electron Devices Society
We demonstrate a charge-trap flash (CTF) device with a germanium-incorporated silicon nitride (Ge:SiN) charge-trap layer (CTL). Compared to a conventional SiN CTL, the 6 nm-thick Ge:SiN CTL exhibits increased trap density and deeper trap levels.
Geonhee Shin   +4 more
doaj   +1 more source

Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure

open access: yesAdvanced Science, 2022
To address the demands of emerging data‐centric computing applications, ferroelectric field‐effect transistors (Fe‐FETs) are considered the forefront of semiconductor electronics owing to their energy and area efficiency and merged logic–memory ...
Sungpyo Baek   +9 more
doaj   +1 more source

Engineering peptides into antibodies—opportunities and strategies for therapeutic innovation

open access: yesFEBS Letters, EarlyView.
Peptides and antibodies occupy complementary therapeutic niches. Peptides recognize difficult targets in a compact format, while antibodies add specificity, long half‐life, and effector functions. This review examines strategies that merge both modalities—peptide grafting into loops, terminal and Fc fusions, and bioconjugation—highlighting how ...
Jinling Wang   +2 more
wiley   +1 more source

Time-Domain Simulation and Optimization of the Memory Window for HZO-Based FeFETs Using the NLS Model

open access: yesMicromachines
Hafnium-zirconium oxide (HZO)-based ferroelectric field-effect transistors (FeFETs) are expected to become core devices for new embedded memory and compute-in-memory systems.
Shangda Han   +3 more
doaj   +1 more source

CHARACTERISTICS OF MALICIOUS DLLS IN WINDOWS MEMORY [PDF]

open access: yes, 2015
Dynamic link library (DLL) injection is a method of forcing a running process to load a DLL into its address space. Malware authors use DLL injection to hide their code while it executes on a system. Due to the large number and variety of DLLs in modern Windows systems, distinguishing a malicious DLL from a legitimate DLL in an arbitrary process is non-
Dae Glendowne   +3 more
openaire   +2 more sources

‘Guide and Prejudice’— How Argonautes recognize targets across domains of life

open access: yesFEBS Letters, EarlyView.
Argonaute proteins use short nucleic‐acid guides to locate and regulate specific targets across all domains of life. Despite striking diversity—from human gene silencing to bacterial immune defence—all Argonautes share a conserved three‐stage recognition logic: guide‐directed sampling, progressive target pairing with a conformational checkpoint and ...
Jack P. K. Bravo
wiley   +1 more source

Variability Analysis of Ferroelectric FinFETs for Embedded Non-Volatile Memory Applications

open access: yesIEEE Access
In this study, we conduct a comparative analysis of the process variation induced variability – specifically the random ferroelectric/dielectric phase variation, the metal work function variation, and the line edge roughness – in various ...
Byeongju Ha   +3 more
doaj   +1 more source

Effect of Charge Retention of Non-Volatile Memory TFTs Under Multiple Read Cycles

open access: yesIEEE Journal of the Electron Devices Society, 2017
A hydrogenated amorphous silicon thin-film transistor with an engineered charge-trapping interface between the gate dielectric and the channel layer is fabricated to realize non-volatile memory. The memory devices possessed a large memory window and good
Sunil Sanjeevi   +4 more
doaj   +1 more source

Stimulator of interferon genes agonist augmented antitumor immunity of osimertinib in Egfr‐mutated lung cancer

open access: yesMolecular Oncology, EarlyView.
Combining osimertinib with the STING agonist ADU‐S100 activates innate and adaptive immunity to overcome the non‐inflamed microenvironment of Egfr‐mutant lung cancer. This combination increases NK and CD8+ T‐cell infiltration, associated with activation of the STING‐IRF3 pathway and local immunogenic cell death.
Jun Nishimura   +19 more
wiley   +1 more source

Plasma-Enhanced Atomic Layer Deposition-Based Ferroelectric Field-Effect Transistors

open access: yesIEEE Journal of the Electron Devices Society
The use of the plasma-enhanced atomic layer deposition (ALD) technique for the deposition of HfO2-based ferroelectrics has received attention in recent years primarily due to wake-up free operation.
Chinsung Park   +13 more
doaj   +1 more source

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