Results 11 to 20 of about 167,971 (313)

A Temporal Window Attention-Based Window-Dependent Long Short-Term Memory Network for Multivariate Time Series Prediction

Entropy, 2022
Multivariate time series prediction models perform the required operation on a specific window length of a given input. However, capturing complex and nonlinear interdependencies in each temporal window remains challenging.
Shuang Han, Hongbin Dong
doaj   +2 more sources

CCR5 closes the temporal window for memory linking [PDF]

, 2022
Real world memories are formed in a particular context and are often not acquired or recalled in isolation (1–5). Time is a key variable in the organization of memories, since events experienced close in time are more likely to be meaningfully associated,
Tian, Min, Salinas, Shelbi, de Sousa, André F., Cai, Denise, Heo, Won Do, Shen, Yang, Huang, Shan, Do Heo, Won, Liu, Andy, Lavi, Ayal, Necula, Deanna, Li, Shuoyi, Fernandes, Giselle, de Sousa, André F, Silva, Alcino J, Cai, Ying, Lee, Jinsu, Silva, Tawnie, Nury Kim, Zhou, Chengbin, Kang, Xiaoman, Filho, Daniel Almeida, Kamata, Masakazu, Zhou, Miou, Kim, Nury, Silva, Alcino J.   +25 more
core   +1 more source

Memory Window in Ferroelectric Field-Effect Transistors: Analytical Approach

, 2022
A memory window of ferroelectric field-effect transistors (FeFETs), defined as a separation of the HIGH-state and the LOW-state threshold voltages, is an important measure of the FeFET memory characteristics.
Toprasertpong, Kasidit, Takenaka, Mitsuru, Takagi, Shinichi   +2 more
core   +1 more source

Simulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap charges

Scientific Reports, 2021
In this study, we examine the electrical characteristics of silicon nanowire feedback field-effect transistors (FBFETs) with interface trap charges between the channel and gate oxide.
Yejin Yang, Young-Soo Park, Jaemin Son, Kyoungah Cho, Sangsig Kim   +4 more
doaj   +1 more source

3D NAND Flash Memory Based on Double-Layer NC-Si Floating Gate with High Density of Multilevel Storage

Nanomaterials, 2022
As a strong candidate for computing in memory, 3D NAND flash memory has attracted great attention due to the high computing efficiency, which outperforms the conventional von-Neumann architecture. To ensure 3D NAND flash memory is truly integrated in the
Xinyue Yu, Zhongyuan Ma, Zixiao Shen, Wei Li, Kunji Chen, Jun Xu, Ling Xu   +6 more
doaj   +1 more source

Introduction of WO₃ Layer in a Cu-Based Al₂O₃ Conductive Bridge RAM System for Robust Cycling and Large Memory Window

IEEE Journal of the Electron Devices Society, 2016
In this paper, we optimize a WO3\Al2O3 bilayer serving as the electrolyte of a conductive bridge RAM device using a Cu-based supply layer. By introducing a WO3 layer formed by thermal oxidation of a W plug, the hourglass shape of the conductive filament ...
Jiyong Woo, Attilio Belmonte, Augusto Redolfi, Hyunsang Hwang, Malgorzata Jurczak, Ludovic Goux   +5 more
doaj   +1 more source

Optimization of Projected Phase Change Memory for Analog In‐Memory Computing Inference

Advanced Electronic Materials, 2023
Phase change memory (PCM) is one of the most promising candidates for non‐von Neumann based analog in‐memory computing–particularly for inference of previously‐trained deep neural networks (DNN).
Ning Li, Charles Mackin, An Chen, Kevin Brew, Timothy Philip, Andrew Simon, Iqbal Saraf, Jin‐Ping Han, Syed Ghazi Sarwat, Geoffrey W. Burr, Malte Rasch, Abu Sebastian, Vijay Narayanan, Nicole Saulnier   +13 more
doaj   +1 more source

Ferroelectric Memory Based on Topological Domain Structures: A Phase Field Simulation

Crystals, 2022
The low storage density of ferroelectric thin film memory currently limits the further application of ferroelectric memory. Topologies based on controllable ferroelectric domain structures offer opportunities to develop microelectronic devices such as ...
Jing Huang, Pengfei Tan, Fang Wang, Bo Li   +3 more
doaj   +1 more source

Dual-Mechanism Memory Combining Charge Trapping and Polarization Switching for Wide Memory Window Flash Cell

, 2023
We propose a novel memory device to overcome the limited Vth window in charge trap flash (CTF) memory, which prevents the realization of a high number of bits/cell.
Chu, Jun Hong, Shin, Eui Joong, Cho, Byung Jin, Lee, Gyusoup, Kim, Seongho   +4 more
core   +1 more source

Developmental changes in the engagement of episodic retrieval processes and their relationship with working memory during the period of middle childhood. [PDF]

, 2011
We examined the development of children’s engagement of the episodic retrieval processes of recollection and familiarity and their relationship with working memory (WM).
Hancock, Peter J B, Hancock, Peter, Sinéad M. Rhodes, Murphy, Derek, Rhodes, Sinead Maire, Peter J. B. Hancock, Rhodes, Sinead, Derek Murphy   +7 more
core   +1 more source