Results 1 to 10 of about 3,132 (215)

Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing [PDF]

open access: yesNano Convergence, 2023
In the growing area of neuromorphic and in-memory computing, there are multiple reviews available. Most of them cover a broad range of topics, which naturally comes at the cost of details in specific areas.
Markus Hellenbrand   +1 more
doaj   +2 more sources

Effect of Lanthanum‐Aluminum Co‐Doping on Structure of Hafnium Oxide Ferroelectric Crystals [PDF]

open access: yesAdvanced Science
Hafnium oxide (HfO2)‐based devices have been extensively evaluated for high‐speed and low‐power memory applications. Here, the influence of aluminum (Al) and lanthanum (La) co‐doping HfO2 thin films on the ferroelectric characteristics of hafnium‐based ...
Zhenhai Li   +12 more
doaj   +2 more sources

Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO2) Devices via Sol-Gel Method Stacking Tri-Layer HfO2/Al-ZnO/HfO2 Structures [PDF]

open access: yesNanomaterials, 2022
Resistive random-access memory (RRAM) is a promising candidate for next-generation non-volatile memory. However, due to the random formation and rupture of conductive filaments, RRMS still has disadvantages, such as small storage windows and poor ...
Yuan-Dong Xu   +7 more
doaj   +2 more sources

Self-powered photo-pyroelectric sensing in antiferroelectric Hafnium zirconium memory with asymmetric van der Waals electrodes [PDF]

open access: yesNature Communications
Hafnium zirconium oxide with antiferroelectric polarizations holds great promise for emerging applications such as neuromorphic computing, energy-efficient storage, and nonvolatile memory, owing to its tunable phase transitions, fast switching speed ...
Xia Gan   +7 more
doaj   +2 more sources

Investigation of Hafnium Oxide Containing Zirconium in the Scaled Region on the Surface of As-Cast Nickel-Based Single Crystal Superalloy Turbine Blades

open access: yesCrystals, 2023
Surface scale is usually formed in the aerofoil part of as-cast nickel-based single crystal turbine blades by the strong interaction between the mould wall and the melt, and the subsequent oxidation of the fresh metallic surface of the casting.
KeeHyun Park, Paul Withey
doaj   +1 more source

Advances of hafnium based nanomaterials for cancer theranostics

open access: yesFrontiers in Chemistry, 2023
Hafnium-based nanomaterials (Hf-NMs) have attracted the interest of numerous biomedical researchers by their unique properties. Recent years have witnessed significant advancements in the field of Hafnium-based nanomaterials, particularly in the context ...
Jiayi Wang   +6 more
doaj   +1 more source

Determination of the vapour pressure curves and vaporization enthalpies of hafnium alkoxides using thermogravimetric analysis [PDF]

open access: yesRoyal Society Open Science, 2019
In order to identify a volatile metallo-organic precursor for the deposition of hafnium oxide (HfO2) films for atomic layer deposition (ALD) applications, the evaporative properties of hafnium alkoxides (hafnium isopropoxide, hafnium n-propoxide and ...
Changhong Wang   +2 more
doaj   +1 more source

Effect of Al2O3 interlayers on the microstructure and electrical response of ferroelectric doped HfO2 thin films

open access: yesFrontiers in Nanotechnology, 2022
Novel devices based on ferroelectric hafnium oxide comply with the increasing demand for highly scalable embedded non-volatile memory devices, especially for in-memory computing applications.
Maximilian Lederer   +4 more
doaj   +1 more source

Electric field-induced crystallization of ferroelectric hafnium zirconium oxide

open access: yesScientific Reports, 2021
Ferroelectricity in crystalline hafnium oxide thin films is strongly investigated for the application in non-volatile memories, sensors and other applications. Especially for back-end-of-line (BEoL) integration the decrease of crystallization temperature
Maximilian Lederer   +6 more
doaj   +1 more source

Pyroelectric and Ferroelectric Properties of Hafnium Oxide Doped with Si via Plasma Enhanced ALD

open access: yesCrystals, 2022
Devices based on ferroelectric hafnium oxide are of major interest for sensor and memory applications. In particular, Si-doped hafnium oxide layers are investigated for the application in the front-end-of-line due to their resilience to high thermal ...
Markus Neuber   +5 more
doaj   +1 more source

Home - About - Disclaimer - Privacy