Results 11 to 20 of about 3,150 (261)

Effect of Al2O3 interlayers on the microstructure and electrical response of ferroelectric doped HfO2 thin films

open access: yesFrontiers in Nanotechnology, 2022
Novel devices based on ferroelectric hafnium oxide comply with the increasing demand for highly scalable embedded non-volatile memory devices, especially for in-memory computing applications.
Maximilian Lederer   +4 more
doaj   +1 more source

Electric field-induced crystallization of ferroelectric hafnium zirconium oxide

open access: yesScientific Reports, 2021
Ferroelectricity in crystalline hafnium oxide thin films is strongly investigated for the application in non-volatile memories, sensors and other applications. Especially for back-end-of-line (BEoL) integration the decrease of crystallization temperature
Maximilian Lederer   +6 more
doaj   +1 more source

Hafnium oxidation at high temperature in steam

open access: yesJournal of Nuclear Materials, 2021
To assess the potential impact of using hafnium as absorber material in LWRs in high temperature accidental situations, the oxidation behavior of hafnium was studied up to 1400 °C, i.e. at temperature conditions relevant to severe accidents. Different sample geometries were tested and oxidized in steam/argon mixtures, either in a furnace or in a ...
S. Guilbert-Banti   +5 more
openaire   +4 more sources

Reduction of hafnium oxide and hafnium silicate by rhenium and platinum [PDF]

open access: yesApplied Physics Letters, 2006
We report chemical interactions of Hf-based dielectrics with Re and Pt overlayers during annealing. Reduction of the Hf to a suboxide is observed by x-ray photoelectron spectroscopy, along with a decrease in total oxygen content measured by medium-energy ion scattering.
M. Copel   +3 more
openaire   +1 more source

Pyroelectric and Ferroelectric Properties of Hafnium Oxide Doped with Si via Plasma Enhanced ALD

open access: yesCrystals, 2022
Devices based on ferroelectric hafnium oxide are of major interest for sensor and memory applications. In particular, Si-doped hafnium oxide layers are investigated for the application in the front-end-of-line due to their resilience to high thermal ...
Markus Neuber   +5 more
doaj   +1 more source

Review of clinical applications of radiation-enhancing nanoparticles

open access: yesBiotechnology Reports, 2020
Purpose: Clinical evidence of the radiation-enhancing effects of nanoparticles has emerged. Materials and methods: We searched the literature in English and French on PubMed up to October 2019.
N. Scher   +6 more
doaj   +1 more source

Ferroelectric Polarization Enhancement in Hafnium-Based Oxides Through Capping Layer Engineering

open access: yesIEEE Journal of the Electron Devices Society, 2022
In this work, we investigate that the capping layer (CL) engineering of aluminum oxide (AlOx) on the dopant-free hafnium oxide (HfOx) and the hafnium zirconium oxide (HfZrOx) ferroelectric metal-ferroelectric-metal (MFM) capacitors. The AlOx CL featuring
Hsuan-Han Chen   +5 more
doaj   +1 more source

High Performance and High Yield Solution Processed IGZO Thin Film Transistors Fabricated with Low‐Temperature Annealed Hafnium Dioxide Gate Dielectric

open access: yesAdvanced Electronic Materials, 2023
Solution‐processed microelectronics offer advantages, including cost‐effectiveness, higher energy efficiency, and compatibility with rapid prototyping compared to their counterparts fabricated through traditional semiconductor manufacturing processes ...
Yutong Liu   +5 more
doaj   +1 more source

Raman Spectra of High-κ Dielectric Layers Investigated with Micro-Raman Spectroscopy Comparison with Silicon Dioxide

open access: yesThe Scientific World Journal, 2013
Three samples with dielectric layers from high-κ dielectrics, hafnium oxide, gadolinium-silicon oxide, and lanthanum-lutetium oxide on silicon substrate were studied by Raman spectroscopy.
P. Borowicz   +4 more
doaj   +1 more source

Performance Comparison of SONOS-Type UV TD Sensor Using Indium Tin Oxide-Aluminum Oxide-Zirconia Aluminum Oxide-Silicon Oxide-Silicon and Indium Tin Oxide-Aluminum Oxide-Hafnium Aluminum Oxide-Silicon Oxide-Silicon

open access: yesCrystals, 2023
This study compares the performance of two types of capacitive devices, indium tin oxide-aluminum oxide-zirconia aluminum oxide-silicon oxide-silicon (IAZAOS) and indium tin oxide-aluminum oxide-hafnium aluminum oxide-silicon oxide-silicon (IAHAOS), as ...
Fun-Cheng Jong, Wen-Ching Hsieh
doaj   +1 more source

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