Results 11 to 20 of about 3,150 (261)
Novel devices based on ferroelectric hafnium oxide comply with the increasing demand for highly scalable embedded non-volatile memory devices, especially for in-memory computing applications.
Maximilian Lederer +4 more
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Electric field-induced crystallization of ferroelectric hafnium zirconium oxide
Ferroelectricity in crystalline hafnium oxide thin films is strongly investigated for the application in non-volatile memories, sensors and other applications. Especially for back-end-of-line (BEoL) integration the decrease of crystallization temperature
Maximilian Lederer +6 more
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Hafnium oxidation at high temperature in steam
To assess the potential impact of using hafnium as absorber material in LWRs in high temperature accidental situations, the oxidation behavior of hafnium was studied up to 1400 °C, i.e. at temperature conditions relevant to severe accidents. Different sample geometries were tested and oxidized in steam/argon mixtures, either in a furnace or in a ...
S. Guilbert-Banti +5 more
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Reduction of hafnium oxide and hafnium silicate by rhenium and platinum [PDF]
We report chemical interactions of Hf-based dielectrics with Re and Pt overlayers during annealing. Reduction of the Hf to a suboxide is observed by x-ray photoelectron spectroscopy, along with a decrease in total oxygen content measured by medium-energy ion scattering.
M. Copel +3 more
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Pyroelectric and Ferroelectric Properties of Hafnium Oxide Doped with Si via Plasma Enhanced ALD
Devices based on ferroelectric hafnium oxide are of major interest for sensor and memory applications. In particular, Si-doped hafnium oxide layers are investigated for the application in the front-end-of-line due to their resilience to high thermal ...
Markus Neuber +5 more
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Review of clinical applications of radiation-enhancing nanoparticles
Purpose: Clinical evidence of the radiation-enhancing effects of nanoparticles has emerged. Materials and methods: We searched the literature in English and French on PubMed up to October 2019.
N. Scher +6 more
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Ferroelectric Polarization Enhancement in Hafnium-Based Oxides Through Capping Layer Engineering
In this work, we investigate that the capping layer (CL) engineering of aluminum oxide (AlOx) on the dopant-free hafnium oxide (HfOx) and the hafnium zirconium oxide (HfZrOx) ferroelectric metal-ferroelectric-metal (MFM) capacitors. The AlOx CL featuring
Hsuan-Han Chen +5 more
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Solution‐processed microelectronics offer advantages, including cost‐effectiveness, higher energy efficiency, and compatibility with rapid prototyping compared to their counterparts fabricated through traditional semiconductor manufacturing processes ...
Yutong Liu +5 more
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Three samples with dielectric layers from high-κ dielectrics, hafnium oxide, gadolinium-silicon oxide, and lanthanum-lutetium oxide on silicon substrate were studied by Raman spectroscopy.
P. Borowicz +4 more
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This study compares the performance of two types of capacitive devices, indium tin oxide-aluminum oxide-zirconia aluminum oxide-silicon oxide-silicon (IAZAOS) and indium tin oxide-aluminum oxide-hafnium aluminum oxide-silicon oxide-silicon (IAHAOS), as ...
Fun-Cheng Jong, Wen-Ching Hsieh
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