Results 11 to 20 of about 953,284 (297)
Effect of Yttrium Oxide Impurities on the Structure and Properties of Metallic Hafnium [PDF]
Фізика і хімія твердого тіла, 2017 The influence of yttrium oxide impurity content of 0 to 0.4 wt.% on the structure and microhardness metal hafniuminvestigated. It is shown that grain size decreases and the Microhardness of hafnium increases monotonically with increasing content of ...
S. V. Chornobuk +2 more
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Crystals, 2023 This study compares the performance of two types of capacitive devices, indium tin oxide-aluminum oxide-zirconia aluminum oxide-silicon oxide-silicon (IAZAOS) and indium tin oxide-aluminum oxide-hafnium aluminum oxide-silicon oxide-silicon (IAHAOS), as ...
Fun-Cheng Jong, Wen-Ching Hsieh
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Ultrafast and accurate prediction of polycrystalline hafnium oxide phase-field ferroelectric hysteresis using graph neural networks [PDF]
Nanoscale AdvInternational audienceAccelerate ferroelectric material discovery with a highly accurate and efficient Graph Neural Network predicting hysteresis in polycrystalline hafnium ...
Brice, Gautier +2 more
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Effect of Lanthanum‐Aluminum Co‐Doping on Structure of Hafnium Oxide Ferroelectric Crystals [PDF]
Advanced ScienceHafnium oxide (HfO2)‐based devices have been extensively evaluated for high‐speed and low‐power memory applications. Here, the influence of aluminum (Al) and lanthanum (La) co‐doping HfO2 thin films on the ferroelectric characteristics of hafnium‐based ...
Zhenhai Li +12 more
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Measurement and analysis of the resolved resonance cross sections of the natural hafnium isotopes [PDF]
, 2010 Hafnium is a ductile metallic element with a large neutron absorption cross section. It can be used in reactor control rods to regulate the fission process. The NEA High Priority Request List for nuclear data presents a need for improved characterisation
Ware, Timothy Christopher
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Ferroelectric Polarization Enhancement in Hafnium-Based Oxides Through Capping Layer Engineering
IEEE Journal of the Electron Devices Society, 2022 In this work, we investigate that the capping layer (CL) engineering of aluminum oxide (AlOx) on the dopant-free hafnium oxide (HfOx) and the hafnium zirconium oxide (HfZrOx) ferroelectric metal-ferroelectric-metal (MFM) capacitors. The AlOx CL featuring
Hsuan-Han Chen +5 more
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Hafnium oxidation at high temperature in steam
Journal of Nuclear Materials, 2021 To assess the potential impact of using hafnium as absorber material in LWRs in high temperature accidental situations, the oxidation behavior of hafnium was studied up to 1400 °C, i.e. at temperature conditions relevant to severe accidents. Different sample geometries were tested and oxidized in steam/argon mixtures, either in a furnace or in a ...
Guilbert, Severine +5 more
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A Study on Imprint Behavior of Ferroelectric Hafnium Oxide Caused by High‐Temperature Annealing
, 2023 Hafnium oxide is found to be a favorable material for ferroelectric nonvolatile memory devices. Its compatibility with complementary metal-oxide-semiconductor processes, the relatively low crystallization temperature when zirconium-doped, and the ...
Thiem, Steffen +27 more
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Advanced Electronic Materials, 2023 Solution‐processed microelectronics offer advantages, including cost‐effectiveness, higher energy efficiency, and compatibility with rapid prototyping compared to their counterparts fabricated through traditional semiconductor manufacturing processes ...
Yutong Liu +5 more
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Reduction of hafnium oxide and hafnium silicate by rhenium and platinum [PDF]
Applied Physics Letters, 2006 We report chemical interactions of Hf-based dielectrics with Re and Pt overlayers during annealing. Reduction of the Hf to a suboxide is observed by x-ray photoelectron spectroscopy, along with a decrease in total oxygen content measured by medium-energy ion scattering.
M. Copel +3 more
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