Results 31 to 40 of about 953,284 (297)

Hafnium-Oxide 3‑D Nanofilms via the Anodizing of Al/Hf Metal Layers

, 2018
Hafnium-oxide films with self-organized nanostructured 3-D architectures and variable dimension (10 to 400 nm) are synthesized via the high-current anodizing of thin aluminum-on-hafnium layers in phosphoric, malonic, and oxalic acid electrolytes.
Maria Bendova (1274943), Francesc Gispert-Guirado (5066843), Eduard Llobet (1628230), Alexander Mozalev (2048605)   +3 more
core   +1 more source

2D-3D integration of hexagonal boron nitride and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators

Nature Communications, 2021
Here, three-dimensional hafnium oxide and two-dimensional hexagonal boron nitride are integrated in the insulating section of double-layer graphene optical modulators, leading to a maximum bandwidth of 39 GHz and enhanced modulation efficiency.
Hitesh Agarwal, Bernat Terrés, Lorenzo Orsini, Alberto Montanaro, Vito Sorianello, Marianna Pantouvaki, Kenji Watanabe, Takashi Taniguchi, Dries Van Thourhout, Marco Romagnoli, Frank H. L. Koppens   +10 more
doaj   +1 more source

Electrical characteristics of novel hafnium oxide film

, 2002
Hafnium oxide film grown by the direct sputtering of a hafnium target in oxygen ambient was investigated. XPS results showed that the interface between the hafnium oxide and silicon substrate was bad.
Kok, C. W., Ng, K. L., Zhan, N., Poon, M. C., Wong, H., Chan, M.   +5 more
core   +1 more source

SOME PROPERTIES OF HAFNIUM OXIDE, HAFNIUM SILICATE, CALCIUM HAFNATE AND HAFNIUM CARBIDE

Journal of the American Ceramic Society, 1954
The behavior of hafnium oxide was studied particularly in the temperature range 1500° to 18OO°C. Properties of HfO 2 at these temperatures and its reactions with ZrO 2 , SiO 2 , and CaO are given in terms of ...
C Curtis, L Doney, J Johnson
openaire   +3 more sources

Low-Temperature Atomic Layer Deposited Oxide on Titanium Nitride Electrodes Enables Culture and Physiological Recording of Electrogenic Cells

Frontiers in Neuroscience, 2020
The performance of electrode arrays insulated by low-temperature atomic layer deposited (ALD) titanium dioxide (TiO2) or hafnium dioxide (HfO2) for culture of electrogenic cells and for recording of extracellular action potentials is investigated.
Michele Dollt, Miriam Reh, Miriam Reh, Michael Metzger, Gerhard Heusel, Martin Kriebel, Volker Bucher, Günther Zeck   +7 more
doaj   +1 more source

Defect-Induced Phase Transition in Hafnium Oxide Thin Films: Comparing Heavy Ion Irradiation and Oxygen-Engineering Effects

, 2021
Hafnium oxide acts as a functional dielectric in a variety of traditional and emerging nonvolatile memory technologies. To investigate the effect of heavy ion irradiation on its crystalline structure, highly textured hafnium oxide films were irradiated ...
Alff, Lambert, Kaiser, Nico, Vallee, Christophe, Trautmann, Christina, Piros, Eszter, Charpin-Nicolle, Christelle, Petzold, Stefan, Lefevre, Gauthier, Nowak, Etienne, Guillaume, Nicolas, Vogel, Tobias, David, Sylvain, Eszter Piros, Lambert Alff, Tobias Vogel, Nicolas Guillaume, Sylvain David, Christophe Vallee, Christelle Charpin-Nicolle, Nico Kaiser, Etienne Nowak, Christina Trautmann, Gauthier Lefevre, Stefan Petzold   +23 more
core   +1 more source

Effects of Substrate and Annealing Conditions on the Ferroelectric Properties of Non-Doped HfO₂ Deposited by RF Plasma Sputter

Nanomaterials
In this study, the effect of annealing and substrate conditions on the ferroelectricity of undoped hafnium oxide (HfO2) was analyzed. Hafnium oxide was deposited on various substrates such as platinum, titanium nitride, and silicon (Pt, TiN, Si) through ...
Seokwon Lim, Yeonghwan Ahn, Beomho Won, Suwan Lee, Hayoung Park, Mohit Kumar, Hyungtak Seo   +6 more
doaj   +1 more source

Performance Improvement of Total Ionization Dose Radiation Sensor Devices Using Fluorine-Treated MOHOS

Sensors, 2016
Fluorine-treated titanium nitride–silicon oxide–hafnium oxide–silicon oxide–silicon devices (hereafter F-MOHOS) are candidates for total ionization dose (TID) radiation sensor applications.
Wen-Ching Hsieh, Hao-Tien Daniel Lee, Fuh-Cheng Jong, Shich-Chuan Wu   +3 more
doaj   +1 more source

Hafnium oxide thin films: Effect of growth parameters on oxygen and hafnium vacancies

, 2009
Thin films of hafnium oxide were grown by reactive molecular beam epitaxy. The growth parameters, substrate temperature, and oxidation conditions were varied in a wide range in order to investigate their influence on the thin film characteristics.
H. von Seggern, Kurian, J., Seggern, H. von, Hildebrandt, E., E. Hildebrandt, J. Zimmermann, L. Alff, Fleissner, A., Zimmermann, J., Alff, L., J. Kurian, A. Fleissner   +11 more
core   +1 more source

Elastic properties of monoclinic hafnium oxide [PDF]

, 1977
The elastic properties of monoclinic hafnium oxide were studied as functions of porosity, temperature and grain size. An important finding of this study was that hafnium oxide is subject to microcracking when the grain size exceeds a critical value ...
Dole, S.L.
core   +1 more source