Results 41 to 50 of about 3,132 (215)

Investigating the Effect of Inclination Angle and the Influence of Scan Parameters on the Appearance and Thermal and Mechanical Properties of Filigree Tension Rods of LPBF‐Manufactured NiTi Shape‐Memory Alloys

Advanced Engineering Materials, EarlyView.
This article investigates the dependence of the properties on the manufacturing orientation in the form of the inclination angle to the build plate of LPBF‐fabricated NiTi rods with a diameter of 150–220 µm. Metallographic, chemical, thermal, and mechanical characterization show behavior under identical manufacturing conditions that ranges from ...
Sandra Herzig, Michael Werner, Christian Rotsch   +2 more
wiley   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Optimizing the Ferroelectric Performance of Hf0.5Zr0.5O2 Epitaxial Film by La0.67Sr0.33MnO3 Capping Layer

Advanced Electronic Materials
Hafnium‐oxide‐based ferroelectrics have garnered considerable research interest, primarily for their robust ferroelectricity at the nanoscale and their high compatibility with complementary metal‐oxide‐semiconductors processes.
Kuan Liu, Kai Liu, Xingchang Zhang, Feng Jin, Jie Fang, Enda Hua, Huan Ye, Jinfeng Zhang, Zhengguo Liang, Qiming Lv, Wenbin Wu, Chao Ma, Lingfei Wang   +12 more
doaj   +1 more source

Ultrasensitive negative capacitance phototransistors

Nature Communications, 2020
Here, the authors report ultrasensitive negative capacitance phototransistors based on MoS2 regulated by a layer of ferroelectric hafnium zirconium oxide film to demonstrate a hysteresis-free ultra-steep subthreshold slope of 17.64 mV/dec and specific ...
Luqi Tu, Rongrong Cao, Xudong Wang, Yan Chen, Shuaiqin Wu, Fang Wang, Zhen Wang, Hong Shen, Tie Lin, Peng Zhou, Xiangjian Meng, Weida Hu, Qi Liu, Jianlu Wang, Ming Liu, Junhao Chu   +15 more
doaj   +1 more source

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

Advanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben, Nicolas Gauquelin, Arno Annys, Zhaoliang Liao, Jo Verbeeck, Guus Rijnders, Gertjan Koster   +6 more
wiley   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Comparative investigation of passive voltage amplification in ferroelectric-dielectric heterostructure

Journal of Physics Communications
This paper investigates the ferroelectric-dielectric heterostructure with a fixed dielectric oxide and different ferroelectric oxides. This study is focused on the enhancement of capacitance, voltage amplification, and negative capacitance stabilization.
Archana C M, Bhaskar Awadhiya, Yashwanth Nanjappa   +2 more
doaj   +1 more source

Titanium Suboxides Responsible for Electronic Anomaly Near Room Temperature in the Ti3C2Tx MXene

Advanced Functional Materials, EarlyView.
Our multi‐technique study reveals that the near‐room‐temperature anomaly in Ti3C2Tx MXene is linked to titanium suboxide nanodomains, including Ti3O5, embedded within the MXene host. Their temperature‐driven transformation provides an alternative explanation to solvent‐ and swelling‐based models and offers new insight into the thermally activated ...
Bence G. Márkus, Bradlee J. McIntosh, Lili Vajtai, Anna Nyáry, Sándor H. Sipos, Nirmal J. Ghimire, Ferenc Simon, László Forró, Dávid Beke   +8 more
wiley   +1 more source

Research progresses on artificial neural network based on hafnium oxide

Gongneng cailiao yu qijian xuebao
The hafnium oxide ferroelectric tunnel junction (FTJ) has shown great potential in in-memory computing due to its unique material properties and device performance.
Liu LIU, Weikang CAO, Shuliang YANG, Yiqun HU, Qingxuan LI, Zhenhai LI   +5 more
doaj   +1 more source

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

Advanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg, Thomas W. Pfeifer, Chuanzhen Zhou, Yong Kyu Choi, Duk‐Hyun Choe, Patrick E. Hopkins, Jon F. Ihlefeld   +6 more
wiley   +1 more source