Results 1 to 10 of about 821,355 (285)

Electric field-induced crystallization of ferroelectric hafnium zirconium oxide [PDF]

Scientific Reports, 2021
Ferroelectricity in crystalline hafnium oxide thin films is strongly investigated for the application in non-volatile memories, sensors and other applications. Especially for back-end-of-line (BEoL) integration the decrease of crystallization temperature
Maximilian Lederer, Sukhrob Abdulazhanov, Ricardo Olivo, David Lehninger, Thomas Kämpfe, Konrad Seidel, Lukas M. Eng   +6 more
doaj   +6 more sources

Ferroelectricity and Oxide Reliability of Stacked Hafnium-Zirconium Oxide Devices. [PDF]

Materials (Basel), 2023
In this work, we investigate the ferroelectricity of stacked zirconium oxide and hafnium oxide (stacked HfZrO) with different thickness ratios under metal gate stress and simultaneously evaluate the electrical reliability of stacked ferroelectric films.
Liao RY, Chen HH, Lin PY, Liang TA, Su KH, Lin IC, Wen CH, Chou WC, Hsu HH, Cheng CH.   +9 more
europepmc   +4 more sources

Investigation of Hafnium Oxide Containing Zirconium in the Scaled Region on the Surface of As-Cast Nickel-Based Single Crystal Superalloy Turbine Blades [PDF]

Crystals, 2023
Surface scale is usually formed in the aerofoil part of as-cast nickel-based single crystal turbine blades by the strong interaction between the mould wall and the melt, and the subsequent oxidation of the fresh metallic surface of the casting.
KeeHyun Park, Paul Withey
doaj   +4 more sources

Nonvolatile optical phase shift in ferroelectric hafnium zirconium oxide [PDF]

Nature Communications
A nonvolatile optical phase shifter is a critical component for enabling the fabrication of programmable photonic integrated circuits on a Si photonics platform, facilitating communication, computing, and sensing. Although ferroelectric materials such as
Kazuma Taki, Naoki Sekine, Kouhei Watanabe, Yuto Miyatake, Tomohiro Akazawa, Hiroya Sakumoto, Kasidit Toprasertpong, Shinichi Takagi, Mitsuru Takenaka   +8 more
doaj   +5 more sources

A multi-timescale synaptic weight based on ferroelectric hafnium zirconium oxide [PDF]

Communications Materials, 2023
Brain-inspired neuromorphic computing is a key technology for processing an ever-growing amount of data. Here, an artificial synapse with dual resistance modulation mechanisms is demonstrated, achieving a dynamic range of 60, an endurance exceeding 1010 ...
Mattia Halter, Laura Bégon-Lours, Marilyne Sousa, Youri Popoff, Ute Drechsler, Valeria Bragaglia, Bert Jan Offrein   +6 more
doaj   +2 more sources

Self-powered photo-pyroelectric sensing in antiferroelectric Hafnium zirconium memory with asymmetric van der Waals electrodes [PDF]

Nature Communications
Hafnium zirconium oxide with antiferroelectric polarizations holds great promise for emerging applications such as neuromorphic computing, energy-efficient storage, and nonvolatile memory, owing to its tunable phase transitions, fast switching speed ...
Xia Gan, Liping Zhu, Jiyuan Han, Xinrong Zuo, Changlin Zheng, Wenwu Li, Junhao Chu, Zhenghua An   +7 more
doaj   +2 more sources

Formation and energetics of head-to-head and tail-to-tail domain walls in hafnium zirconium oxide [PDF]

Scientific Reports
180 $$^\circ$$ ∘ domains walls (DWs) of head-to-head/tail-to-tail (H–H/T–T) type in ferroelectric (FE) materials are of immense interest for a comprehensive understanding of the FE attributes as well as harnessing them for new applications.
Tanmoy Kumar Paul, Atanu Kumar Saha, Sumeet Kumar Gupta   +2 more
doaj   +2 more sources

Ultralow Voltage Resistive Switching in Hafnium–Zirconium Oxide

Advanced Physics Research
Ultralow SET and RESET voltage are essential for high‐density, low‐power, and small heat dissipation nonvolatile random‐access memory (NVRAM) elements.
M. Asif, Rajib K. Rakshit, Ashok Kumar
doaj   +2 more sources

Effect of post-metallization anneal on monolithic co-integration of Hf0.5Zr0.5O2-based FeFET and CMOS [PDF]

Scientific Reports
Hafnium oxide-based ferroelectrics, particularly zirconium-doped HfO2 (HZO), have demonstrated excellent compatibility with CMOS fabrication processes. However, the impact of post-metallization annealing (PMA)—a key step in optimizing device performance ...
Jehyun An, Beomjoo Ham, Giryun Hong, Jongseo Park, Bohyeon Kang, Jaeseong Pyo, Sung-Min Ahn, Rock-Hyun Baek   +7 more
doaj   +2 more sources

Ferroelectric Polarization Enhancement in Hafnium-Based Oxides Through Capping Layer Engineering

IEEE Journal of the Electron Devices Society, 2022
In this work, we investigate that the capping layer (CL) engineering of aluminum oxide (AlOx) on the dopant-free hafnium oxide (HfOx) and the hafnium zirconium oxide (HfZrOx) ferroelectric metal-ferroelectric-metal (MFM) capacitors. The AlOx CL featuring
Hsuan-Han Chen, Ruo-Yin Liao, Wu-Ching Chou, Hsiao-Hsuan Hsu, Chun-Hu Cheng, Ching-Chien Huang   +5 more
doaj   +1 more source