Results 21 to 30 of about 821,355 (285)
Spectrographic Analysis of Hafnium in Zirconium Oxide
Journal of the Spectroscopical Society of Japan, 1959 This method is devised for the determination of hafnium in zirconium oxide as reactor material.The“sifter electrode-spark excitation technique ” employed by C.Feldman and J.Y.Ellenburg is utilized and the sensitivity is extended to 100 ppm hafnium.In this technique, samples, finely ground and mixed with equal amount of graphite powder, are put into the
SAKAI, Shoushiro, ISHIGURO, Saburo
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Crystals, 2020 We report the growth of nanoscale hafnium dioxide (HfO2) and zirconium dioxide (ZrO2) thin films using remote plasma-enhanced atomic layer deposition (PE-ALD), and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits ...
Zhigang Xiao +3 more
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XAFS spectrum of Zirconium oxide
This dataset consists of X-ray absorption fine structure (XAFS) spectra at Zr K-edge of zirconium oxide measured at Aichi SR BL5S1, and is a part of XAFS database (MDR XAFS DB, https://doi.org/10.48505/nims.1447) as a collection of ...
Aichi SR
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Oxidation Resistance of Modified Aluminide Coatings
MATEC Web of Conferences, 2019 The application of protective aluminide coatings is an effective way to increase the oxidation resistance of the treated parts and prolongs their lifetime. The addition of small amount of noble metals (platinum or palladium) or reactive elements such as:
Romanowska Jolanta +2 more
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Synthesis and Fabrication of Hafnium Zirconium Oxide (HZO) /P(VDF-TrFE) Flexible Piezoelectric Composite Films [PDF]
, 2023 This paper presents the synthesis and fabrication of Hafnium zirconium oxide/Polyvinylidene Fluoride-Trifluoroethylene (HZO/P(VDF-TrFE)) flexible piezoelectric films. Metallo-organic decomposition method from a low-toxicity chemical solution was used for
Acuautla, Mónica +4 more
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Nanomaterials, 2022 Ferroelectric fin field-effect transistors with a trench structure (trench Fe-FinFETs) were fabricated and characterized. The inclusion of the trench structures improved the electrical characteristics of the Fe-FinFETs.
Siao-Cheng Yan +5 more
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Ferroelectric field effect transistors: Progress and perspective
APL Materials, 2021 Ferroelectric field effect transistors (FeFETs) have attracted attention as next-generation devices as they can serve as a synaptic device for neuromorphic implementation and a one-transistor (1T) for achieving high integration.
Jae Young Kim, Min-Ju Choi, Ho Won Jang
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Complex Refractive Index of Hafnium Zirconium Oxide (Hf1-xZrxO2, 0≤x≤1)
, 2020 This dataset contains the complex refractive index calculated from spectroscopic ellipsometry data collected on 20 nm thick hafnium zirconium oxide films subjected to a 600 degree Celsius rapid thermal anneal that are reported in "Compositional ...
Balachandran, Prasanna V. +13 more
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Phase stability of hafnium oxide and zirconium oxide on silicon substrate [PDF]
Scripta Materialia, 2007 5 pages, 3 ...
Shin, Dongwon, Liu, Zi-Kui
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Solution Combustion Synthesis of Hafnium-Doped Indium Oxide Thin Films for Transparent Conductors
Nanomaterials, 2022 Indium oxide (In2O3)-based transparent conducting oxides (TCOs) have been widely used and studied for a variety of applications, such as optoelectronic devices. However, some of the more promising dopants (zirconium, hafnium, and tantalum) for this oxide
Rita Firmino +7 more
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