Results 11 to 20 of about 821,355 (285)
Advanced Electronic MaterialsBiaxial stress is identified to play an important role in the polar orthorhombic phase stability in hafnium oxide‐based ferroelectric thin films. However, the stress state during various stages of wake‐up has not yet been quantified.
Samantha T. Jaszewski +10 more
doaj +2 more sources
Explorative study on the antibacterial effects of 3D-printed PMMA/nitrides composites
Materials & Design, 2021 Following the rising interested on 3D-printing technologies, this research explores the possibility to apply nitride-polymethylmethacrylate composite coatings on 3D printed parts in order to increase their resistance to bacteria colonization.
Elia Marin +5 more
doaj +1 more source
Structure, Properties, and Reactivity of Polyoxocationic Zirconium and Hafnium Clusters [PDF]
, 2022 Hexameric tetravalent zirconium and hafnium molecular metal oxides clusters are key building blocks of many metal-organic frameworks; however, the chemical space to form all possible MOF nodes is vast, containing many potential new clusters.
Ethan, Hare +2 more
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An experimental comparison of interface trap density in hafnium oxide-based FeFETs
Memories - Materials, Devices, Circuits and Systems, 2023 In recent years, there has been significant progress in the development of high-κ materials in the semiconductor industry. Given that the contact between the channel and the electrode has a crucial impact on reliability, the selection of electrode ...
Chaiwon Woo +4 more
doaj +1 more source
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2020 Thermal atomic layer etching (ALE) can be achieved using sequential, self-limiting fluorination and ligand-exchange reactions. Previous studies have demonstrated thermal ALE of amorphous HfO2 and ZrO2 ALD films. This study explored the differences between thermal ALE of amorphous and polycrystalline films of hafnium oxide, zirconium oxide, and hafnium ...
Jessica A. Murdzek, Steven M. George
openaire +1 more source
Application of Solution Method to Prepare High Performance Multicomponent Oxide Thin Films
Membranes, 2022 Capacitors play an increasingly important role in hybrid integrated circuits, while the MIM capacitors with high capacitance density and small thickness can meet the needs of high integration.
Yaru Pan +9 more
doaj +1 more source
Thermal stability of hafnium zirconium oxide on transition metal dichalcogenides [PDF]
Applied Surface Science, 2021 Ferroelectric oxides interfaced with transition metal dichalcogenides (TMDCs) offer a promising route toward ferroelectric-based devices due to lack of dangling bonds on the TMDC surface leading to a high-quality and abrupt ferroelectric/TMDC interface.
Maria Gabriela Sales +5 more
openaire +2 more sources
Тонкие химические технологии, 2018 The results of elaborating a method for the synthesis of zirconia and hafnia doped by rare earths (yttrium, erbium and scandium) by using low-hydrated hydroxides of zirconium and hafnium as precursors are reported.
E. E. Nikishina +2 more
doaj +1 more source
Investigations of Zr(IV) in LiF-CaF2: stability with oxide ions and electroreduction pathway on inert and reactive electrodes [PDF]
, 2013 In this work, a detailed electrochemical study of the molten LiF-CaF2-ZrF4 system is provided in the 810-920°C temperature range, allowing the determination of the reduction potential, the diffusion coefficient and the reduction mechanism of dissolved Zr(
Cassayre, Laurent +4 more
core +1 more source
Ultrasensitive negative capacitance phototransistors
Nature Communications, 2020 Here, the authors report ultrasensitive negative capacitance phototransistors based on MoS2 regulated by a layer of ferroelectric hafnium zirconium oxide film to demonstrate a hysteresis-free ultra-steep subthreshold slope of 17.64 mV/dec and specific ...
Luqi Tu +15 more
doaj +1 more source