Results 41 to 50 of about 821,355 (285)

Ferroelectric Polarization Enabled Threshold Voltage Modulation in High Electron Mobility Transistor

Advanced Functional Materials, EarlyView.
A comprehensive model is developed to capture the coupled electrostatics of a ferroelectric capacitor and a metal‐insulator‐semiconductor high electron mobility transistor (MISHEMT) connected in ferroelectric‐metal high electron mobility transistor (FeMHEMT) configuration.
Wentian Gao, Andre Wachowiak, Thomas Mikolajick, Uwe Schroeder, Roberto Guido   +4 more
wiley   +1 more source

Zirconium-89 Complexes for Cell Tracking with Positron Emission Tomography [PDF]

, 2015
Tracking cell migration in vivo by scintigraphy using cells labelled with gamma-emitting radionuclides (especially indium-111) is a well-established clinical and research tool.
Ferris, Trevor John
core  

A Ferroelectric Thin Film Transistor Based on Annealing-Free HfZrO Film

IEEE Journal of the Electron Devices Society, 2017
A ferroelectric thin film transistor (Fe-TFT) based on annealing-free hafnium zirconium oxide (HfZrO) is demonstrated in this paper. Indium zinc oxide was used as channel semiconductor. The as-deposited 30-nm HfZrO film implemented as gate dielectric was
Yuxing Li, Renrong Liang, Jiabin Wang, Ying Zhang, He Tian, Houfang Liu, Songlin Li, Weiquan Mao, Yu Pang, Yutao Li, Yi Yang, Tian-Ling Ren   +11 more
doaj   +1 more source

Atom Probe Tomography as an Emerging Tool for Understanding Defect‑Driven Mechanisms in HfO2‑Based Ferroelectrics

Advanced Functional Materials, EarlyView.
This Perspective highlights atom probe tomography as a powerful tool for understanding the atomic‐scale defect chemistry in HfO2‐based ferroelectrics. 3D mapping of dopants, point defects, and interface chemistry can provide new insight into defect‐driven mechanisms underpinning the ferroelectricity in the system and guide the design of more reliable ...
Kasper Hunnestad, Catherine Dubourdieu, Alexei Gruverman, Dennis Meier   +3 more
wiley   +1 more source

Hafnium Oxide as Efficient Material for a New Generation Dielectric [PDF]

, 2018
In the early 2000-ies, world leaders in the field of computer engineering, such companies as IBM, Intel and Samsung Electronics announced the development of a new technology for the production of boards based on multilayer films HfO₂-Al₂O₃ on a silicon ...
Terentieva, O., Mukhachov, A., O.A. Kharitonova, Kharitonova, O., O.A. Terentieva, A.P. Mukhachov   +5 more
core   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

Investigation of Recovery Phenomena in Hf_0.5Zr_0.5O₂-Based 1T1C FeRAM

IEEE Journal of the Electron Devices Society, 2023
We have previously studied fatigue and its recovery phenomenon on 64 kbits hafnium-based one-transistor and one-capacitor (1T1C) ferroelectric random-access memory (FeRAM) with PVD-TiN (30 nm)/ALD- Hf0.5Zr0.5O2 (8 nm)/CVD-TiN (50 nm) capacitors.
Jun Okuno, Tsubasa Yonai, Takafumi Kunihiro, Yusuke Shuto, Ruben Alcala, Maximilian Lederer, Konrad Seidel, Thomas Mikolajick, Uwe Schroeder, Masanori Tsukamoto, Taku Umebayashi   +10 more
doaj   +1 more source

Separation of hafnium from zirconium by anion exchange

, 1961
The results of a systematic survey of the elution of hafnium and zirconium in diluted sulfuric acid, and in solutions of hydrochloric and sulfuric acids in water, are presented.
Hague, John L.; Machlan, Lawrence A.
core   +1 more source

Unified Phase‐Field Framework for Antiferroelectric, Ferroelectric and Dielectric Phases: Application to HZO Thin Films

Advanced Functional Materials, EarlyView.
HfxZr1−xO2${\rm Hf}_x{\rm Zr}_{1-x}{\rm O}_2$ offers CMOS‐compatible nanoscale ferroelectricity yet suffers from a high Ec${\rm E}_c$ demanding large operating voltages. A unified phase‐field framework spanning AFE/FE/DE phases shows how FE grains soften neighboring AFE grains over λ$\lambda$ ≈$\approx$ 22–37 nm.
P. Pankaj, Sandeep Sugathan, Jiyoung Kim, Si Joon Kim, Pil‐Ryung Cha   +4 more
wiley   +1 more source

Influence of Zirconium Doping on the Dielectric Properties of Hafnium Oxide Films

Доклады Белорусского государственного университета информатики и радиоэлектроники
A comparison of the dielectric characteristics (relative permittivity, dielectric loss tangent, band gap, leakage current and breakdown voltage) of hafnium and hafnium-zirconium oxide films was carried out.
D. A. Golosov, J. Zhang, S. M. Zavadski, S. N. Melnikov, H. T. Doan, P. A. Alexandrovitch   +5 more
doaj   +1 more source