Results 51 to 60 of about 821,355 (285)
Obtaining Iron (III) – Containing Triple Molybdate K5FeZr(MoO4)6 by Sol-Gel Technology
Конденсированные среды и межфазные границы, 2020 Oxide compounds, as the basis of promising materials, are used in various fields of modern technologies due to their electrical and optical properties.
Aleksandra V. Logvinova +2 more
doaj +1 more source
Absorbed dose assessment in particle-beam irradiated metal-oxide and metal-nonmetal memristors [PDF]
Nuclear Technology and Radiation Protection, 2012 Absorbed dose was estimated after Monte Carlo simulation of proton and ion beam irradiation on metal-oxide and metal-nonmetal memristors. A memristive device comprises two electrodes, each of a nanoscale width, and a double-layer active region ...
Knežević Ivan D. +3 more
doaj +1 more source
The role of zirconium in microalloyed steels [PDF]
, 2015 Recently there has been a renewed interest in the addition of zirconium to microalloyed steels. It has been used since the early 1920's, but has never been universally employed, as have niobium, titanium or vanadium.
Baker, Neville
core +1 more source
Advanced Functional Materials, EarlyView.Temperature‐resolved in situ grazing‐incidence wide‐angle X‐ray scattering reveals that oxygen vacancies actively regulate crystallization in Hf0.5Zr0.5O2 thin films. By decoupling macroscopic strain from intrinsic phase evolution, a vacancy‐lean environment significantly lowers the activation energy barrier for crystallization.
Hyun Woo Jeong +9 more
wiley +1 more source
PLASMA THERMAL BARRIER COATINGS BASED ON ZIRCONIUM DIOXIDE WITH HIGH THERMAL STABILITY
Наука и техника, 2015 The paper presents optimization of processes for obtaining maximum content of tetragonal phase in the initial material and thermal barrier coatings (TBC) based on zirconium dioxide and hafnium oxide.
O. G. Devoino, V. V. Okovity
doaj
Advanced Physics Research, 2023 Modern microelectronic systems and applications demand an every increasing amount of non‐volatile memories that are fast, reliable, and consume little power.
David Lehninger +10 more
doaj +1 more source
A Study on Imprint Behavior of Ferroelectric Hafnium Oxide Caused by High‐Temperature Annealing
, 2023 Hafnium oxide is found to be a favorable material for ferroelectric nonvolatile memory devices. Its compatibility with complementary metal-oxide-semiconductor processes, the relatively low crystallization temperature when zirconium-doped, and the ...
Thiem, Steffen +27 more
core +1 more source
Advanced Functional Materials, EarlyView.Hafnium zirconium oxide thin films are grown using plasma‐enhanced atomic layer deposition with the addition of an atomic layer annealing (ALA) step. ALA leads to a change in the short‐range structure of the deposit and encourages formation of the ferroelectric Pca21 phase. The result is wake‐up‐free performance with films exposed to ALA.
Nicolas K. Lam +18 more
wiley +1 more source
Large remnant polarization and great reliability characteristics in W/HZO/W ferroelectric capacitors
Frontiers in Materials, 2022 In this work, the effect of rapid thermal annealing (RTA) temperature on the ferroelectric polarization in zirconium-doped hafnium oxide (HZO) was studied. To maximize remnant polarization (2Pr), in-plane tensile stress was induced by tungsten electrodes
Shiva Asapu +14 more
doaj +1 more source
Far‐Infrared Hyperbolic Phonon–Polaritons in Zirconium Disulfide
Advanced Materials, EarlyView.An unpatterned ZrS2${\rm ZrS}_2$ flake, coupled to far‐field infrared light by metal nanoribbons, reveals hyperbolic phonon polaritons with multiple higher‐order branches and effective refractive indices up to 223. This resonator‐assisted approach establishes ZrS2${\rm ZrS}_2$ as a compact van der Waals platform for deeply subwavelength far‐infrared ...
Subhodip Saha +7 more
wiley +1 more source