Results 61 to 70 of about 821,355 (285)
This paper investigates the ferroelectric-dielectric heterostructure with a fixed dielectric oxide and different ferroelectric oxides. This study is focused on the enhancement of capacitance, voltage amplification, and negative capacitance stabilization.
Archana C M +2 more
doaj +1 more source
Hafnium oxide coating to improve the oxidation behavior of Zirconium Diboride [PDF]
Hafnium dioxide (HfO2) coatings were successfully deposited on zirconium diboride (ZrB2) using reactive magnetron sputtering. After the oxidation at 1500°C or 1600°C, the mutual dissolution of HfO2 and thermally grown ZrO2 was observed which has resulted
Förster, Jan Erik +3 more
openaire +3 more sources
A large‐area, deformable high‐entropy‐ceramic (HEC)‐doped triboelectric nanogenerator with a trilayer architecture is developed, consisting of an HEC‐doped triboelectric layer, a graphite‐like textile charge‐storage layer, and stretchable carbon black electrodes.
Shengyou Li +13 more
wiley +1 more source
Synthesis of zirconium(IV) and hafnium(IV) isopropoxide, sec-butoxide and tert-butoxide [PDF]
We revisited the synthesis of zirconium(IV) and hafnium(IV) alkoxides, namely the metal isopropoxide isopropanol complex (M(OiPr)4.iPrOH, M = Zr, Hf) and the metal sec- and tert-butoxide (M(OsBu)4 and M(OtBu)4, M = Zr, Hf).
Jonathan, De Roo +2 more
core +1 more source
Characterization of ferroelectric hafnium/zirconium oxide solid solutions deposited by reactive magnetron sputtering [PDF]
International audienceThe room temperature deposition of 10 nm-thick ferroelectric hafnium/zirconium oxide, (Hf, Zr)O 2 , thin solid films is achieved with a single hafnium/zirconium, Hf/Zr, alloy target by reactive magnetron sputtering.
Bouaziz, Jordan +7 more
core +1 more source
Disturb‐Resilient and Wake‐up‐Free 2T‐MFMFET Array for Storage and Computing Applications
A disturb‐resilient and wake‐up‐free 2T‐MFMFET array fabricated using a FeRAM‐compatible process demonstrates excellent uniformity, a large memory window, and 3‐bit multi‐level‐cell storage capability. A newly proposed hybrid in‐memory computing scheme further enables accurate multiply–accumulate operations with minimal refresh overhead, highlighting ...
Chen‐Yi Cho +6 more
wiley +1 more source
Hafnium-Oxide 3‑D Nanofilms via the Anodizing of Al/Hf Metal Layers
Hafnium-oxide films with self-organized nanostructured 3-D architectures and variable dimension (10 to 400 nm) are synthesized via the high-current anodizing of thin aluminum-on-hafnium layers in phosphoric, malonic, and oxalic acid electrolytes.
Maria Bendova (1274943) +3 more
core +1 more source
Phase Diagrams and Piezoelectric Properties of Wurtzite Al1−x−yScxGdyN Heterostructural Alloys
This study demonstrates ferroelectricity and piezoelectric properties improvement of quaternary wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films, guided by density functional theory calculations. Wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films have a high optical bandgap, enhanced piezoelectric ...
Julia L. Martin +11 more
wiley +1 more source
The effects of the grain size of Pt bottom electrodes on the ferroelectricity of hafnium zirconium oxide (HZO) were studied in terms of the orthorhombic phase transformation.
An Hoang-Thuy Nguyen +8 more
doaj +1 more source
Zirconium-hafnium equilibria [PDF]
Equilibria in the thiocyanate-methyl isobutyl ketone process for the separation of zirconium and hafnium were studied. The effects of average thiocyanate concentration, feed acidity, and feed zirconium concentration on the separation factor of hafnium ...
Eisen, Edwin Otto
core

