Results 31 to 40 of about 821,355 (285)
IEEE Journal of the Electron Devices Society, 2019 Ferroelectric memories have made big advancements in the last years due to the discovery of ferroelectricity in already widely used hafnium oxide. Here we investigate ferroelectric tunnel junctions (FTJ) consisting of a ferroelectric hafnium zirconium ...
Benjamin Max +3 more
doaj +1 more source
Interfacial Regulation of Dielectric Properties in Ferroelectric Hf0.5Zr0.5O2 Thin Films
IEEE Journal of the Electron Devices Society, 2021 The discovery of ferroelectricity in hafnium zirconium oxide (HZO) thin films has attracted wide attention from academia to industry due to the application in ferroelectric non-volatile random access memories (FeRAM) with prominent performance in ...
Minghao Shao +9 more
doaj +1 more source
Time‐Dependent Oxidation and Scale Evolution of a Wrought Co/Ni‐Based Superalloy
Advanced Engineering Materials, EarlyView.This study shows how a new wrought Co/Ni‐based superalloy resists oxidation at 800 ∘$^\circ$C. The oxide scale changes from rough, fast‐growing spinel to a dense, protective chromia–alumina layer. Atom probe analysis reveals tiny refractory‐rich bubbles at the interface that mark the transition to long‐term, diffusion‐controlled protection ...
Cameron Crabb +6 more
wiley +1 more source
Advanced Electronic Materials, 2023 Hafnium zirconium oxide (HZO) is an ideal candidate for the implementation of ferroelectric memristive devices, due to its compatibility with the complementary metal‐oxide‐semiconductor technology.
Greta Segantini +11 more
doaj +1 more source
RF-Characterization of HZO Thin Film Varactors
Crystals, 2021 A microwave characterization at UHF band of a ferroelectric hafnium zirconium oxide metal-ferroelectric-metal (MFM) capacitors for varactor applications has been performed.
Sukhrob Abdulazhanov +9 more
doaj +1 more source
Pentacene-Based Thin-Film Transistors With a Solution-Process Hafnium Oxide Insulator [PDF]
, 2009 —Pentacene-based organic thin-film transistors with solution-process hafnium oxide (HfOx) as gate insulating layer have been demonstrated. The solution-process HfOx could not only exhibit a high-permittivity (κ = 11) dielectric constant but also has ...
Chou, Dei-Wei +6 more
core
Separation of hafnium from zirconium and their determination: separation by anion-exchange
, 1962 A procedure is described for the separation of hafnium from zirconium and their individual determination. The sample is dissolved in sulfuric and hydrofluoric acids and the hydrofluoric acid removed by fuming.
Machlan, Lawrence A.; Hague, John L.
core +1 more source
Advanced Functional Materials, EarlyView.Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg +6 more
wiley +1 more source
BEoL integrated hafnium zirconium oxide varactors for tunable mmWave applications
, 2023 253256In this work we demonstrate Back-End-of-Line (BEoL) integrated thin-film metal-ferroelectric-metal (MFM) varactors based on ferroelectric hafnium zirconium oxide.
Huynh, Dang Khoa +5 more
core +1 more source