Results 51 to 60 of about 3,150 (261)
Hafnium‐oxide‐based ferroelectrics have garnered considerable research interest, primarily for their robust ferroelectricity at the nanoscale and their high compatibility with complementary metal‐oxide‐semiconductors processes.
Kuan Liu +12 more
doaj +1 more source
Ultrasensitive negative capacitance phototransistors
Here, the authors report ultrasensitive negative capacitance phototransistors based on MoS2 regulated by a layer of ferroelectric hafnium zirconium oxide film to demonstrate a hysteresis-free ultra-steep subthreshold slope of 17.64 mV/dec and specific ...
Luqi Tu +15 more
doaj +1 more source
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
Titanium Suboxides Responsible for Electronic Anomaly Near Room Temperature in the Ti3C2Tx MXene
Our multi‐technique study reveals that the near‐room‐temperature anomaly in Ti3C2Tx MXene is linked to titanium suboxide nanodomains, including Ti3O5, embedded within the MXene host. Their temperature‐driven transformation provides an alternative explanation to solvent‐ and swelling‐based models and offers new insight into the thermally activated ...
Bence G. Márkus +8 more
wiley +1 more source
This paper investigates the ferroelectric-dielectric heterostructure with a fixed dielectric oxide and different ferroelectric oxides. This study is focused on the enhancement of capacitance, voltage amplification, and negative capacitance stabilization.
Archana C M +2 more
doaj +1 more source
Research progresses on artificial neural network based on hafnium oxide
The hafnium oxide ferroelectric tunnel junction (FTJ) has shown great potential in in-memory computing due to its unique material properties and device performance.
Liu LIU +5 more
doaj +1 more source
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg +6 more
wiley +1 more source
Advances in Sustainable and Wearable Textile Based Soft Robotics
This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas +6 more
wiley +1 more source
Interface Effects in Ultrathin Silicon on Insulator Films
This work establishes a systematic framework to discriminate how bulk and interface phenomena affect charge transport in ultrathin P‐doped silicon‐on‐insulator (SOI) films. For Si films below 15 nm, electrical characterization demonstrates that interface states drive charge transport, shifting the metal‐insulator transition (MIT) critical dopant ...
Andrea Pulici +8 more
wiley +1 more source
Electrochemical etching provides an eco‐friendly alternative to hazardous HF methods for MXene production. This approach facilitates the selective isolation of the A‐layer from MAX phases with tunable surface terminations. Controlling voltage, electrolytes, temperature, and duration enables the optimal structural integrity. Nevertheless, existing scale
Jagdeep Singh +4 more
wiley +1 more source

