Results 1 to 10 of about 889 (227)
A Comparative Study of n- and p-Channel FeFETs with Ferroelectric HZO Gate Dielectric
Solids, 2023 This study investigates the electrical characteristics observed in n-channel and p-channel ferroelectric field effect transistor (FeFET) devices fabricated through a similar process flow with 10 nm of ferroelectric hafnium zirconium oxide (HZO) as the ...
Khushwant Sehra +2 more
exaly +4 more sources
IEEE Journal of the Electron Devices SocietyThis work systematically investigates the programming and erasing dynamics of IGZO-channel back-gated FeFETs, uncovering that erase operation is significantly slower than programming. PUND measurements in ferroelectric capacitors with IGZO top electrodes
Valery Afanas'Ev +2 more
exaly +4 more sources
Breakdown-limited endurance in HZO FeFETs: Mechanism and improvement under bipolar stress
Frontiers in Electronics, 2022 Breakdown is one of main failure mechanisms that limit write endurance of ferroelectric devices using hafnium oxide-based ferroelectric materials.
Kasidit Toprasertpong +2 more
doaj +2 more sources
FeFET based Logic-in-Memory: an overview [PDF]
2021 16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2021 Emerging non-volatile memories are getting new interest in the system design community. They are used to design logic-in-memory circuits and propose alternatives to von-Neuman architectures. Hafnium oxide-based based ferroelectric memory technology, which is fully compatible with CMOS technologies is particularly interesting for logic-in-memory designs.
Cédric Marchand 0002 +5 more
openaire +3 more sources
Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistors
Journal of Materiomics, 2022 Multilevel ferroelectric field−effect transistors (FeFETs) integrated with HfO2−based ferroelectric thin films demonstrate tremendous potential in high−speed massive data storage and neuromorphic computing applications. However, few works have focused on
Chen Liu +10 more
doaj +1 more source
Ferroelectric field effect transistors: Progress and perspective
APL Materials, 2021 Ferroelectric field effect transistors (FeFETs) have attracted attention as next-generation devices as they can serve as a synaptic device for neuromorphic implementation and a one-transistor (1T) for achieving high integration.
Jae Young Kim, Min-Ju Choi, Ho Won Jang
doaj +1 more source
Nanomaterials, 2021 Strontium bismuth tantalate (SBT) ferroelectric-gate field-effect transistors (FeFETs) with channel lengths of 85 nm were fabricated by a replacement-gate process.
Mitsue Takahashi, Shigeki Sakai
doaj +1 more source
Variability in Planar FeFETs—Channel Percolation Impact
IEEE Transactions on Electron Devices, 2023 sponsorship: This work was supported by the imec's Industrial Affiliation Program (IIAP). (imec's Industrial Affiliation Program (IIAP))
K. Kaczmarek +9 more
openaire +1 more source
Physical modeling of HZO-based ferroelectric field-effect transistors with a WOx channel
Frontiers in Nanotechnology, 2022 The quasistatic and transient transfer characteristics of Hf0.57Zr0.43O2 (HZO)-based ferroelectric field-effect transistors (FeFETs) with a WOx channel are investigated using a 2-D time-dependent Ginzburg-Landau model as implemented in a state-of-the-art
Xin Wen +4 more
doaj +1 more source
Defect profiling in FEFET Si:HfO2 layers [PDF]
Applied Physics Letters, 2020 Ferroelectric Si-doped HfO2 is a promising candidate for future generation memory devices. However, such devices are vulnerable to significant threshold voltage shifts resulting from charge trapping in oxide defects. We use complementary characterization and modeling techniques to reveal significant electron trapping/de-trapping behavior, together with
B. J. O'Sullivan +17 more
openaire +1 more source