Results 1 to 10 of about 723 (223)

Low‐Temperature Nanosecond Laser Process of HZO‐IGZO FeFETs toward Monolithic 3D System on Chip Integration [PDF]

Advanced Science
Ferroelectric field‐effect transistors (FeFETs) are increasingly important for in‐memory computing and monolithic 3D (M3D) integration in system‐on‐chip (SoC) applications.
Dongsu Kim, Heejae Jeong, Goeun Pyo, Su Jin Heo, Seunghun Baik, Seonhyoung Kim, Hong Soo Choi, Hyuk‐Jun Kwon, Jae Eun Jang   +8 more
doaj   +4 more sources

A Comparative Study of n- and p-Channel FeFETs with Ferroelectric HZO Gate Dielectric

Solids, 2023
This study investigates the electrical characteristics observed in n-channel and p-channel ferroelectric field effect transistor (FeFET) devices fabricated through a similar process flow with 10 nm of ferroelectric hafnium zirconium oxide (HZO) as the ...
Paul Jacob, Shan Deng, Kai Ni
exaly   +4 more sources

Understanding the Slow Erase Operation in IGZO-Channel FeFETs: The Role of Positive Charge Generation Kinetics

IEEE Journal of the Electron Devices Society
This work systematically investigates the programming and erasing dynamics of IGZO-channel back-gated FeFETs, uncovering that erase operation is significantly slower than programming. PUND measurements in ferroelectric capacitors with IGZO top electrodes
Zhuo Chen, Nicolò Ronchi, Hongwei Tang   +2 more
exaly   +4 more sources

Role of the channel on the memory window of HfZrOx ferroelectric field-effect transistors with p-type Si-doped InZnOx channel [PDF]

Scientific Reports
To elucidate the origin of the memory window (MW) of HfZrOx ferroelectric field-effect transistors (FeFETs) with a p-type Si-doped InZnOx (p-Si:InZnO) channel, we perform a comparative study with thin-film transistors (TFTs) in which the HfZrOx ...
Hyoungjin Park, Seokjae Lim, Somi Lee, Jae Woo Lee, Jiyong Woo   +4 more
doaj   +2 more sources

Area-Scalable 10⁹-Cycle-High-Endurance FeFET of Strontium Bismuth Tantalate Using a Dummy-Gate Process

Nanomaterials, 2021
Strontium bismuth tantalate (SBT) ferroelectric-gate field-effect transistors (FeFETs) with channel lengths of 85 nm were fabricated by a replacement-gate process.
Mitsue Takahashi, Shigeki Sakai
doaj   +2 more sources

Low‐Frequency Noise Spectroscopy for Navigating Geometrically Varying Strain Effects in HfO2 Ferroelectric FETs [PDF]

Advanced Science
Strain engineering has been widely employed to control and enhance the ferroelectric properties of hafnium oxide (HfO₂)‐based thin films. While previous studies focused on the influence of the strain in simple metal‐ferroelectric‐metal structures, the ...
Ryun‐Han Koo, Wonjun Shin, Sangwoo Kim, Jangsaeng Kim, Been Kwak, Jiseong Im, Hyunwoo Kim, Deok‐Hwang Kwon, Suraj S. Cheema, Jong‐Ho Lee, Daewoong Kwon   +10 more
doaj   +2 more sources

Hot Electrons as the Dominant Source of Degradation for Sub-5nm HZO FeFETs

, 2020
In this work, we demonstrate FDSOI ferroelectric FETs (FeFETs) incorporating 4.5 nm hafnium zirconium oxide, which show a 0.5V memory window at +/-3.3V and a program/erase speed of 1 u s.
Ava J Tan, Milan Pesic, Luca Larcher
exaly   +2 more sources

Ferroelectric Transistor-Based Synaptic Crossbar Arrays: The Impact of Ferroelectric Thickness and Device-Circuit Interactions

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Ferroelectric transistors (FeFETs)-based crossbar arrays have shown immense promise for computing-in-memory (CiM) architectures targeted for neural accelerator designs.
Chunguang Wang, Sumeet Kumar Gupta
doaj   +2 more sources

Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells

2015 IEEE International Electron Devices Meeting (IEDM), 2022
S.26.8.1-26.8.3Recent discovery of ferroelectricity in HfO2 thin films paved the way for demonstration of ultra-scaled 28 nm Ferroelectric FETs (FeFET) as non-volatile memory (NVM) cells [1].
Müller, S., Jansen, S., Paul, J., Polakowski, J., Künneth, C., Flachowsky, S., Mikolajick, T., Kersch, A., Pesic, M., Piontek, S., Kolodinski, S., Schenk, T., Slesazeck, S., Müller, J., Ocker, J., Richter, C., Bentum, R. van, Mulaosmanovic, H., Schröder, U.   +18 more
core   +2 more sources

Compact and High-Performance TCAM Based on Scaled Double-Gate FeFETs

, 2023
Ternary content addressable memory (TCAM), widely used in network routers and high-associativity caches, is gaining popularity in machine learning and data-analytic applications. Ferroelectric FETs (FeFETs) are a promising candidate for implementing TCAM
Shubham Kumar, Simon Thomann, Hussam Amrouch   +2 more
exaly   +2 more sources