Results 41 to 50 of about 723 (223)
Ferroelectric Field Effect Transistors Based on PZT and IGZO
IEEE Journal of the Electron Devices Society, 2019 Ferroelectric field effect transistors (FeFETs) based on lead zirconate titanate (PZT) ferroelectric material and amorphous-indium-gallium-zinc oxide (a-IGZO) were developed and characterized.
Cristina Besleaga +7 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2022 We have fabricated junctionless N-type silicon-on-insulator (SOI) ferroelectric-HfO2 field effect transistors (FeFETs) with overlap and underlap structures between gate and drain/source regions to investigate the role of gate-induced-drain-leakage (GIDL)
Fei Mo +8 more
doaj +1 more source
AIP Advances, 2020 Recently, hafnium oxide (HfO2)-based ferroelectric materials have achieved phenomenal success in next-generation nonvolatile memory applications.
Ming-Yang Cha +7 more
doaj +1 more source
Scientific Reports, 2022 Hyperdimensional computing (HDC) is a brain-inspired computational framework that relies on long hypervectors (HVs) for learning. In HDC, computational operations consist of simple manipulations of hypervectors and can be incredibly memory-intensive.
Arman Kazemi +8 more
doaj +1 more source
Advanced Functional Materials, EarlyView.A fully transparent, all‐metal‐oxide neuromorphic transistor using a sodium‐embedded alumina (SEA) electrolyte is demonstrated. By precisely tuning the thermal annealing process, the chemical composition of the SEA layer is controlled, allowing for the deterministic realization of both short‐term and long‐term synaptic plasticity within the same device
Yonghyun Albert Kwon +7 more
wiley +1 more source
ZrO2 Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles
Nanoscale Research Letters, 2020 This paper investigates the impacts of post-rapid thermal anneal (RTA) and thickness of ZrO2 on the polarization P and electrical characteristics of TaN/ZrO2/Ge capacitors and FeFETs, respectively.
Huan Liu +6 more
doaj +1 more source
Advanced Materials, EarlyView.The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj +8 more
wiley +1 more source
Improving the Scalability of Ferroelectric FET Nonvolatile Memories With High-k Spacers
IEEE Journal of the Electron Devices Society, 2022 This paper investigates scaled ferroelectric field-effect transistor (FeFET) nonvolatile memories (NVMs) with high-k spacer device design considering ferroelectric-dielectric random phase variations with TCAD atomistic simulations.
You-Sheng Liu, Pin Su
doaj +1 more source
Modeling and Investigating Total Ionizing Dose Impact on FeFET
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2023 This article presents a novel, simulation-based study of the long-term impact of X-ray irradiation on the ferroelectric field effect transistor (FeFET). The analysis is conducted through accurate multiphysics technology CAD (TCAD) simulations and radiation impact on the two FeFET memory states—high-voltage threshold (HVT) and low-voltage ...
Munazza Sayed, Kai Ni, Hussam Amrouch
openaire +4 more sources
Designable van der Waals Crystal for Artificial Neuronal Cell Mimicking
Advanced Materials, EarlyView.Designable van der Waals crystal has been demonstrated for device‐scale neuronal cell mimicking. The structural similarity between ion‐channel in biological membranes and layered vdW lattices is realized with nano‐crystallization via Ar + H2S plasma sulfurization.
Jinhyoung Lee +23 more
wiley +1 more source