Results 41 to 50 of about 889 (227)

Multi-level Operation of FeFETs Memristors: The Crucial Role of Three Dimensional Effects

, 2022
This paper investigates and compares through a comprehensive TCAD analysis 2D and 3D simulations for ferro-electric based FETs. We provide clear evidence that the multiple read conductance values experimentally observed in FeFETs stem from source to ...
Lizzit D., Esseni D., Bernardi T.
core   +1 more source

Recent Progress in Downsizing FeFETs for Fe-NAND Application

, 2011
Sub-micrometer ferroelectric-gate field-effect transistors (FeFETs) of 0.56 μm and 0.50 μm gate lengths were successfully fabricated for Fe-NAND cells. Gate stacks of the FeFETs were Pt/SrBi2Ta2O9(SBT)/Hf-Al-O/Si.
Le Van Hai, Mitsue Takahashi, Shigeki Sakai   +2 more
core   +1 more source

Analog Content-Addressable Memory from Complementary FeFETs [PDF]

, 2023
To address the increasing computational demands of artificial intelligence (AI) and big data, compute-in-memory (CIM) integrates memory and processing units into the same physical location, reducing the time and energy overhead of the system.
Jacob, Paul, Kurinec, Santosh, Schroeder, Uwe, Chaudhari, Pratik, Liu, Xiwen, Jariwala, Deep, Richter, Claudia, Katti, Keshava, He, Yunfei   +8 more
core   +1 more source

Research status and future prospects of hafnium oxide-based ferroelectric field-effect transistors

Gongneng cailiao yu qijian xuebao
With the rapid advancement of artificial intelligence technology, the scale of data to be processed by computers is growing exponentially, imposing increasingly stringent demands on the performance of computer hardware storage.
Junliang ZHOU, Jianguo LI, Yuetong HUO, Wenchao YAN, Zeping WENG, Jiabin QI, Yi ZHAO   +6 more
doaj   +1 more source

Ferroelectric Field Effect Transistors Based on PZT and IGZO

IEEE Journal of the Electron Devices Society, 2019
Ferroelectric field effect transistors (FeFETs) based on lead zirconate titanate (PZT) ferroelectric material and amorphous-indium-gallium-zinc oxide (a-IGZO) were developed and characterized.
Cristina Besleaga, Roxana Radu, Liliana-Marinela Balescu, Viorica Stancu, Andreea Costas, Viorel Dumitru, George Stan, Lucian Pintilie   +7 more
doaj   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

Efficient Erase Operation by GIDL Current for 3D Structure FeFETs With Gate Stack Engineering and Compact Long-Term Retention Model

IEEE Journal of the Electron Devices Society, 2022
We have fabricated junctionless N-type silicon-on-insulator (SOI) ferroelectric-HfO2 field effect transistors (FeFETs) with overlap and underlap structures between gate and drain/source regions to investigate the role of gate-induced-drain-leakage (GIDL)
Fei Mo, Jiawen Xiang, Xiaoran Mei, Yoshiki Sawabe, Takuya Saraya, Toshiro Hiramoto, Chun-Jung Su, Vita Pi-Ho Hu, Masaharu Kobayashi   +8 more
doaj   +1 more source

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

Advanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan, Hocheon Yoo, Benoît H. Lessard, Ioannis Kymissis, Chang‐Hyun Kim   +4 more
wiley   +1 more source

Enhanced Ferroelectric Phase Formation via Local Structure Modification in the Pre‐Crystalline State of Hafnium Zirconium Oxide Thin Films

Advanced Functional Materials, EarlyView.
Hafnium zirconium oxide thin films are grown using plasma‐enhanced atomic layer deposition with the addition of an atomic layer annealing (ALA) step. ALA leads to a change in the short‐range structure of the deposit and encourages formation of the ferroelectric Pca21 phase. The result is wake‐up‐free performance with films exposed to ALA.
Nicolas K. Lam, Gerald R. Bejger, Waseem A. Wani, Kristina M. Holsgrove, Andrew N. Titus, Niyorjyoti Sharma, Shihao Wang, Keithen Orson, Megan K. Lenox, Liron Shvilberg, Yong Kyu Choi, Ian A. Brummel, Benjamin L. Aronson, Petra Reinke, Quentin Ramasse, Amit Kumar, Brian J. Rodriguez, Christina M. Rost, Jon F. Ihlefeld   +18 more
wiley   +1 more source

MoS2-based ferroelectric field-effect transistor with atomic layer deposited Hf0.5Zr0.5O2 films toward memory applications

AIP Advances, 2020
Recently, hafnium oxide (HfO2)-based ferroelectric materials have achieved phenomenal success in next-generation nonvolatile memory applications.
Ming-Yang Cha, Hao Liu, Tian-Yu Wang, Lin Chen, Hao Zhu, Li Ji, Qing-Qing Sun, David Wei Zhang   +7 more
doaj   +1 more source