Results 31 to 40 of about 889 (227)

Deconvoluting charge trapping and nucleation interplay in FeFETs: Kinetics and Reliability [PDF]

, 2018
Discovery of ferroelectric (FE) behavior in HfO 2 removed the compatibility roadblocks between the state-of-the-art CMOS and FE memories. Even though FE FETs (FeFETs) are scaled into 22 nm nodes and beyond, the limits of the technology as well as the ...
Slcsazeck S., Andrea Padovani, Thomas Mikolajick, Mikolajick T., Larcher L., Padovani A., Luca Larcher, Stefan Slcsazeck, Pesic M., Milan Pesic   +9 more
core   +2 more sources

Using FeFETs as Resistive Synapses in Crossbar-based Analog MAC Accelerating Units

, 2023
137152Emerging non-volatile memories (eNVMs) face problems such as insufficient ROFF/RON-ratio and limited memory operating window that significantly deteriorate the precision of multiply-accumulate computations (MACs), the core computation of artificial
Borggreve, David, Brederlow, Ralf, Vanselow, Frank, Zhang, Lei   +3 more
core   +1 more source

Oxygen Scavenging in HfZrOx‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement

Advanced Electronic Materials, 2023
The authors demonstrate improved switching voltage, retention, and endurance properties in HfZrOx (HZO)‐based n/p‐ferroelectric field‐effect transistors (FeFETs) via oxygen scavenging.
Bong Ho Kim, Song‐Hyeon Kuk, Seong Kwang Kim, Joon Pyo Kim, Yoon‐Je Suh, Jaeyong Jeong, Dae‐Myeong Geum, Seung‐Hyub Baek, Sang Hyeon Kim   +8 more
doaj   +1 more source

Interfacial Layer Engineering to Enhance Endurance and Noise Immunity of FeFETs for IMC Applications

, 2022
Interfacial Layer Engineering to Enhance Endurance and Noise Immunity of FeFETs for IMC ...
Sourav De (12294287)
core   +1 more source

Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO(2)-Based FeFETs for In-Memory-Computing Applications

, 2022
[Image: see text] This article reports an improvement in the performance of the hafnium oxide-based (HfO(2)) ferroelectric field-effect transistors (FeFET) achieved by a synergistic approach of interfacial layer (IL) engineering and READ-voltage ...
Raffel, Yannick, Luca Pirro, Revello Olivo, Ricardo Orlando, Chohan, Talha, Yannick Raffel, Heitmann, Johannes, Ricardo Revello Olivo, De, Sourav, Sourav De, Kämpfe, Thomas, Lederer, Maximilian, Raik Hoffmann, Pirro, Luca, Hoffmann, Raik, Olivo, Ricardo Revello, Maximilian Lederer, Sven Beyer, Talha Chohan, Beyer, Sven, Thomas Kämpfe, Johannes Heitmann, Thunder, Sunanda, Heitmann, J., Sunanda Thunder, Seidel, Konrad, Konrad Seidel   +25 more
core   +1 more source

Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications

, 2023
811This article reports an improvement in the low- frequency noise characteristics in hafnium oxide-based (HfO2) ferroelectric field-effect transistors (FeFET) by interfacial layer (IL) engineering.
Raffel, Yannick, Revello Olivo, Ricardo Orlando, Chohan, Talha, Beyer, Sven, Thunder, Sunanda, De, Sourav, Kämpfe, Thomas, Lederer, Maximilian, Pirro, Luca, Hoffmann, Raik, Seidel, Konrad, Huang, Potsang, Heitman, Johannes   +12 more
core   +1 more source

Charge Pumping Technique to Measure Polarization Switching Charges of FeFETs

, 2022
This study proposes a new method to measure the polarization charge of ferroelectric field effect transistors (FeFETs) using a pulse generator and source measurement unit (SMU) and exploiting the charge pumping (CP) principle, which is widely followed to
Kab Jin Nam (12254789)
core   +1 more source

A Multi-Bit Neuromorphic Weight Cell Using Ferroelectric FETs, suitable for SoC Integration

IEEE Journal of the Electron Devices Society, 2018
A multi-bit digital weight cell for high-performance, inference-only non-GPU-like neuromorphic accelerators is presented. The cell is designed with simplicity of peripheral circuitry in mind.
Borna Obradovic, Titash Rakshit, Ryan Hatcher, Jorge Kittl, Rwik Sengupta, Joon Goo Hong, Mark S. Rodder   +6 more
doaj   +1 more source

Hot Electrons as the Dominant Source of Degradation for Sub-5nm HZO FeFETs

, 2020
In this work, we demonstrate FDSOI ferroelectric FETs (FeFETs) incorporating 4.5 nm hafnium zirconium oxide, which show a 0.5V memory window at +/-3.3V and a program/erase speed of 1 u s.
Tan A. J., Hu C., Larcher L., Bae J. -H., Salahuddin S., Wang L. -C., Pesic M., Liao Y. -H.   +7 more
core   +1 more source

Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer

Nanoscale Research Letters, 2018
Ferroelectric field-effect transistors (FeFETs) with single-walled carbon nanotube (SWCNT) dominated micron-wide stripe patterned as channel, (Bi,Nd)4Ti3O12 films as insulator, and HfO2 films as defect control layer were developed and fabricated.
Qiuhong Tan, Qianjin Wang, Yingkai Liu, Hailong Yan, Wude Cai, Zhikun Yang   +5 more
doaj   +1 more source