Results 11 to 20 of about 723 (223)

​​​Oxy​gen-controlled IGZO channel deposition for enhanced memory window in ferroelectric FETs [PDF]

Scientific Reports
Ferroelectric field-effect transistors (FeFETs) incorporating hafnium-oxide-based ferroelectrics are promising candidates for next-generation nonvolatile memory technologies.
He Young Kang, Seung Hee Cha, Yong Jun Jeong, Gwang-Bok Kim, Da Eun Kim, Jae Kyeong Jeong   +5 more
doaj   +2 more sources

Device-Aware Test for Anomalous Charge Trapping in FeFETs [PDF]

Proceedings of the 30th Asia and South Pacific Design Automation Conference
The development of Ferroelectric Field-Effect Transistor (FeFET) manufacturing requires high-quality test solutions, yet research on FeFET testing is still in a nascent stage.
Sicong Yuan, Changhao Wang, Mottaqiallah Taouil, Xiuyan Li, Riccardo Cantoro, Danyang Chen, Hanzhi Xun, Lin Wang, Nicolò Bellarmino, Said Hamdioui, Moritz Fieback   +10 more
core   +3 more sources

Defects, Fault Modeling, and Test Development Framework for FeFETs [PDF]

2024 IEEE International Test Conference (ITC)
As emerging non-volatile memory (NVM) devices, Ferroelectric Field-Effect Transistors (FeFETs) present distinctive opportunities for the design of ultra-dense and low-leakage memory systems.
Moritz, Fieback, Changhao, Wang, Mottaqiallah, Taouil, Lin, Wang, Sicong, Yuan, Chaobo, Li, Danyang, Chen, Said, Hamdioui, Xiuyan, Li, Hanzhi, Xun, Chujun, Yin, Riccardo, Cantoro   +11 more
core   +3 more sources

Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories

Advanced Materials Interfaces
The discovery of ferroelectricity in HfO2 offering the advantage of nonvolatile polarization switching creates a renewed interest in the semiconductor memory industry.
Eunjin Kim, Jiyong Woo
doaj   +2 more sources

Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer

Nanoscale Research Letters, 2018
Ferroelectric field-effect transistors (FeFETs) with single-walled carbon nanotube (SWCNT) dominated micron-wide stripe patterned as channel, (Bi,Nd)4Ti3O12 films as insulator, and HfO2 films as defect control layer were developed and fabricated.
Qiuhong Tan, Qianjin Wang, Yingkai Liu, Hailong Yan, Wude Cai, Zhikun Yang   +5 more
doaj   +2 more sources

Analog content-addressable memory from complementary FeFETs

Device
Despite recent advancements in non-volatile memory (NVM) for matrix multiplication, other critical data-intensive operations like parallel search remain largely overlooked.
Jacob, Paul, Kurinec, Santosh, Schroeder, Uwe, Chaudhari, Pratik, Liu, Xiwen, Jariwala, Deep, Richter, Claudia, Katti, Keshava, He, Yunfei   +8 more
core   +4 more sources

Ferroelectric capacitors and field-effect transistors as in-memory computing elements for machine learning workloads [PDF]

Scientific Reports
This study discusses the feasibility of Ferroelectric Capacitors (FeCaps) and Ferroelectric Field-Effect Transistors (FeFETs) as In-Memory Computing (IMC) elements to accelerate machine learning (ML) workloads.
Eunseon Yu, Gaurav Kumar K, Utkarsh Saxena, Kaushik Roy   +3 more
doaj   +2 more sources

Integration of Freestanding High‐k Oxide Membranes for 2D Ferroelectric Field‐Effect Transistors [PDF]

Advanced Science
Ferroelectric field‐effect transistors (FeFETs) based on oxides with exceptional dielectric and ferroelectric properties offer compelling prospects for energy‐efficient logic, nonvolatile memory, and neuromorphic computing.
Zejing Guo, Xuyang Sha, Fang Xu, Guangyi Huang, Jinfeng Zhang, Yang Mou, Guorui Zhao, Jiaqi Liu, Qing Lan, Wenqing Song, Cheng Zhang, Hai Huang, Changlin Zheng, Lingfei Wang, Hangwen Guo, Jian Shen, Wu Shi   +16 more
doaj   +2 more sources

High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics [PDF]

Nature Communications
With the development of wearable devices and hafnium-based ferroelectrics (FE), there is an increasing demand for high-performance flexible ferroelectric memories.
Qingxuan Li, Siwei Wang, Zhenhai Li, Xuemeng Hu, Yongkai Liu, Jiajie Yu, Yafen Yang, Tianyu Wang, Jialin Meng, Qingqing Sun, David Wei Zhang, Lin Chen   +11 more
doaj   +2 more sources

The Effect of Ferroelectric/Dielectric Capacitance Ratio on Short-Term Retention Characteristics of MFMIS FeFET

IEEE Journal of the Electron Devices Society
Metal-ferroelectric-metal-insulator-semiconductor (MFMIS) FeFETs have significant potential for use in non-volatile memory applications. This is primarily due to their compatibility with CMOS technology and reliable switching characteristics.
Junghyeon Hwang, Giuk Kim, Hongrae Joh, Jinho Ahn, Sanghun Jeon   +4 more
doaj   +2 more sources