Results 11 to 20 of about 889 (227)

Beyond Conventional Ferroelectric Field‐Effect Transistors: Recent Advances in Materials, Architectures, and Functional Applications

Advanced Physics Research
Ferroelectric field‐effect transistors have emerged as promising device platforms for next‐generation electronics due to their ability to combine nonvolatile memory operation with polarization‐controlled modulation of channel conductance. Recent research
Hyeseoung Lee, Seungjun Lee, Jung‐Kyu Lee, Sungjun Kim   +3 more
doaj   +3 more sources

Role of the channel on the memory window of HfZrOx ferroelectric field-effect transistors with p-type Si-doped InZnOx channel [PDF]

Scientific Reports
To elucidate the origin of the memory window (MW) of HfZrOx ferroelectric field-effect transistors (FeFETs) with a p-type Si-doped InZnOx (p-Si:InZnO) channel, we perform a comparative study with thin-film transistors (TFTs) in which the HfZrOx ...
Hyoungjin Park, Seokjae Lim, Somi Lee, Jae Woo Lee, Jiyong Woo   +4 more
doaj   +2 more sources

High‐Mobility and Reliability Ultra‐Thin‐Channel Oxide Semiconductor Field‐Effect Transistors for Chip‐Interconnect‐Embedded Logic and Ferroelectric Memory [PDF]

Advanced Materials, Volume 38, Issue 52, 16 September 2026.
BEOL‐compatible bilayer heterojunction oxide channel dual‐mode, memory‐logic ferroelectric transistor is fabricated to address long‐standing challenges of mobility and threshold voltage trade‐off by suppressing interfacial defects. This approach not only advances oxide semiconductors toward reliable high‐performance BEOL transistors but also opens new ...
Chun‐Kuei Chen, Sonu Hooda, Maheswari Sivan, Quanzhen Wan, Marco A. Villena, Bastien Beltrando, Zefeng Xu, Zihang Fang, Evgeny Zamburg, Juan B. Roldán, Luca Larcher, Gaurav Thareja, Aaron Voon‐Yew Thean   +12 more
wiley   +2 more sources

Triple‐Level Content‐Addressable Vertical NAND Flash Memory [PDF]

Advanced Science, EarlyView.
Commercial triple‐level‐cell V‐NAND flash memory is transformed into a compact content‐addressable memory by directly exploiting its eight threshold‐voltage states. A parity‐split search scheme preserves storage density while enabling reliable multi‐level and don't‐care matching. Parallel word‐line search delivers up to 24‐fold higher throughput and 54.
Sung‐Ho Park, Jiseong Im, Yeongheon Yang, Ryun‐Han Koo, Jonghyun Ko, Mingyun Oh, Dongbeen Shin, Gyuweon Jung, Jong‐Ho Lee   +8 more
wiley   +2 more sources

Time-Domain Simulation and Optimization of the Memory Window for HZO-Based FeFETs Using the NLS Model [PDF]

Micromachines
Hafnium-zirconium oxide (HZO)-based ferroelectric field-effect transistors (FeFETs) are expected to become core devices for new embedded memory and compute-in-memory systems.
Shangda Han, Weifeng Lü, Yekun Liang, Tianyu Dai   +3 more
doaj   +2 more sources

Wake‐Up and Fatigue under Electrical Cycling in HfO2‐Based Ferroelectrics: Mechanisms and Strategies toward Reliable Devices [PDF]

Advanced Science, EarlyView.
HfO2‐based ferroelectrics exhibit wake‐up and fatigue behaviors during electrical cycling, significantly affecting device endurance and reliability. These phenomena are governed by defect dynamics, including oxygen vacancy redistribution and charge trapping.
Hongseok Kim, Shinhyeong Lee, Hyojun Choi, Minseung Park, Hyunah Cho, Min Hyuk Park, Yunseok Kim   +6 more
wiley   +2 more sources

Low‐Temperature Nanosecond Laser Process of HZO‐IGZO FeFETs toward Monolithic 3D System on Chip Integration [PDF]

Advanced Science
Ferroelectric field‐effect transistors (FeFETs) are increasingly important for in‐memory computing and monolithic 3D (M3D) integration in system‐on‐chip (SoC) applications.
Dongsu Kim, Heejae Jeong, Goeun Pyo, Su Jin Heo, Seunghun Baik, Seonhyoung Kim, Hong Soo Choi, Hyuk‐Jun Kwon, Jae Eun Jang   +8 more
doaj   +5 more sources

Ferroelectric Transistor-Based Synaptic Crossbar Arrays: The Impact of Ferroelectric Thickness and Device-Circuit Interactions

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Ferroelectric transistors (FeFETs)-based crossbar arrays have shown immense promise for computing-in-memory (CiM) architectures targeted for neural accelerator designs.
Chunguang Wang, Sumeet Kumar Gupta
doaj   +2 more sources

Ferroelectric Devices for In‐Memory and In‐Sensor Computing [PDF]

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +2 more sources

Device-Aware Test for Anomalous Charge Trapping in FeFETs [PDF]

Proceedings of the 30th Asia and South Pacific Design Automation Conference
The development of Ferroelectric Field-Effect Transistor (FeFET) manufacturing requires high-quality test solutions, yet research on FeFET testing is still in a nascent stage. To generate a dedicated test method for FeFETs, it is critical to have a deep understanding of manufacturing defects and accurately model them.
Sicong Yuan, Changhao Wang, Moritz Fieback, Hanzhi Xun, Mottaqiallah Taouil, Xiuyan Li, Danyang Chen, Lin Wang 0111, Nicolò Bellarmino, Riccardo Cantoro, Said Hamdioui   +10 more
openaire   +3 more sources