Results 21 to 30 of about 889 (227)

Analog content-addressable memory from complementary FeFETs

Device
To address the increasing computational demands of artificial intelligence (AI) and big data, compute-in-memory (CIM) integrates memory and processing units into the same physical location, reducing the time and energy overhead of the system. Despite advancements in non-volatile memory (NVM) for matrix multiplication, other critical data-intensive ...
Xiwen Liu, Keshava Katti, Yunfei He, Paul Jacob, Claudia Richter, Uwe Schroeder, Santosh Kurinec, Pratik Chaudhari, Deep Jariwala   +8 more
openaire   +4 more sources

Low‐Frequency Noise Spectroscopy for Navigating Geometrically Varying Strain Effects in HfO2 Ferroelectric FETs [PDF]

Advanced Science
Strain engineering has been widely employed to control and enhance the ferroelectric properties of hafnium oxide (HfO₂)‐based thin films. While previous studies focused on the influence of the strain in simple metal‐ferroelectric‐metal structures, the ...
Ryun‐Han Koo, Wonjun Shin, Sangwoo Kim, Jangsaeng Kim, Been Kwak, Jiseong Im, Hyunwoo Kim, Deok‐Hwang Kwon, Suraj S. Cheema, Jong‐Ho Lee, Daewoong Kwon   +10 more
doaj   +2 more sources

​​​Oxy​gen-controlled IGZO channel deposition for enhanced memory window in ferroelectric FETs [PDF]

Scientific Reports
Ferroelectric field-effect transistors (FeFETs) incorporating hafnium-oxide-based ferroelectrics are promising candidates for next-generation nonvolatile memory technologies.
He Young Kang, Seung Hee Cha, Yong Jun Jeong, Gwang-Bok Kim, Da Eun Kim, Jae Kyeong Jeong   +5 more
doaj   +2 more sources

Defects, Fault Modeling, and Test Development Framework for FeFETs [PDF]

2024 IEEE International Test Conference (ITC)
As emerging non-volatile memory (NVM) devices, Ferroelectric Field-Effect Transistors (FeFETs) present distinctive opportunities for the design of ultra-dense and low-leakage memory systems. For matured FeFET manufacturing, it is extremely important to have an understanding of manufacturing defects and accurately model them to develop effective test ...
Changhao Wang, Sicong Yuan, Hanzhi Xun, Chaobo Li, Mottaqiallah Taouil, Moritz Fieback, Danyang Chen, Xiuyan Li, Lin Wang 0111, Riccardo Cantoro, Chujun Yin, Said Hamdioui   +11 more
openaire   +4 more sources

Mechanisms of Temperature‐Dependent Hysteresis in Freestanding BaTiO3/MoS2 Heterostructures [PDF]

Advanced Science, EarlyView.
Freestanding ferroelectric BaTiO3 membranes are combined with monolayer MoS2 into 2D field‐effect transistors. At room temperature they provide ultrahigh‐κ gating with steep subthreshold swing and minimal hysteresis. Upon cooling, strong ferroelectric switching produces two stable memory states with long retention times.
Thomas Pucher, Federico Mompeán, Víctor Rouco, Carlos León, Jacobo Santamaría, Carmen Munuera, Mar García‐Hernández, Andres Castellanos‐Gomez   +7 more
wiley   +2 more sources

Integration of Freestanding High‐k Oxide Membranes for 2D Ferroelectric Field‐Effect Transistors [PDF]

Advanced Science
Ferroelectric field‐effect transistors (FeFETs) based on oxides with exceptional dielectric and ferroelectric properties offer compelling prospects for energy‐efficient logic, nonvolatile memory, and neuromorphic computing.
Zejing Guo, Xuyang Sha, Fang Xu, Guangyi Huang, Jinfeng Zhang, Yang Mou, Guorui Zhao, Jiaqi Liu, Qing Lan, Wenqing Song, Cheng Zhang, Hai Huang, Changlin Zheng, Lingfei Wang, Hangwen Guo, Jian Shen, Wu Shi   +16 more
doaj   +2 more sources

Impact of Fringing Field on the Memory Window of FeFET

, 2023
<p>In this study, ferroelectric field-effect-transistors (FeFETs) with nitride (SiON) interface having various gate lengths (LG) and gate widths (WG) were investigated to study the influence of gate dimensions on the memory window (MW) and endurance characteristics of the FeFETs.
Athira Sunil, Maximilian Lederer, Yannick Raffel, Franz Müller, Thomas Kaempfe, Konrad Seidel, Sourav De   +6 more
openaire   +2 more sources

Ferroelectric capacitors and field-effect transistors as in-memory computing elements for machine learning workloads [PDF]

Scientific Reports
This study discusses the feasibility of Ferroelectric Capacitors (FeCaps) and Ferroelectric Field-Effect Transistors (FeFETs) as In-Memory Computing (IMC) elements to accelerate machine learning (ML) workloads.
Eunseon Yu, Gaurav Kumar K, Utkarsh Saxena, Kaushik Roy   +3 more
doaj   +2 more sources

High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics [PDF]

Nature Communications
With the development of wearable devices and hafnium-based ferroelectrics (FE), there is an increasing demand for high-performance flexible ferroelectric memories.
Qingxuan Li, Siwei Wang, Zhenhai Li, Xuemeng Hu, Yongkai Liu, Jiajie Yu, Yafen Yang, Tianyu Wang, Jialin Meng, Qingqing Sun, David Wei Zhang, Lin Chen   +11 more
doaj   +2 more sources

Ultra-dense co-integration of FeFETs and CMOS logic enabling very-fine grained Logic-in-Memory [PDF]

, 2022
Ferroelectric field-effect transistors (FeFET) based on hafnium oxide offer great opportunities for Logic-in-Memory applications, due to their natural ability to combine logic (transistor) and memory (ferroelectric material), their low-power operation ...
Breyer, Evelyn T., Trommer, Jens, Melde, Thomas, Beyer, Sven, Dünkel, Stefan, Slesazeck, Stefan, Mulaosmanovic, Halid, Trentzsch, Martin, Mikolajick, Thomas   +8 more
core   +1 more source