Results 21 to 30 of about 723 (223)
Impact of Fringing Field on the Memory Window of FeFET
, 2023 In this study, ferroelectric field-effect-transistors (FeFETs) with nitride (SiON) interface having various gate lengths (LG) and gate widths (WG) were investigated to study the influence of gate dimensions on the memory window (MW) and endurance ...
Yannick Raffel (12758051) +6 more
core +2 more sources
FeFET based Logic-in-Memory: an overview [PDF]
2021 16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2021 Emerging non-volatile memories are getting new interest in the system design community. They are used to design logic-in-memory circuits and propose alternatives to von-Neuman architectures. Hafnium oxide-based based ferroelectric memory technology, which is fully compatible with CMOS technologies is particularly interesting for logic-in-memory designs.
Cédric Marchand 0002 +5 more
openaire +2 more sources
IEEE AccessFerroelectric devices and monolithic three-dimensional integration technology (M3D) with good CMOS process compatibility have emerged as promising solutions to scaling issue at the device and system levels, respectively.
Bohyeon Kang +7 more
doaj +2 more sources
Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistors
Journal of Materiomics, 2022 Multilevel ferroelectric field−effect transistors (FeFETs) integrated with HfO2−based ferroelectric thin films demonstrate tremendous potential in high−speed massive data storage and neuromorphic computing applications. However, few works have focused on
Chen Liu +10 more
doaj +1 more source
Ferroelectric field effect transistors: Progress and perspective
APL Materials, 2021 Ferroelectric field effect transistors (FeFETs) have attracted attention as next-generation devices as they can serve as a synaptic device for neuromorphic implementation and a one-transistor (1T) for achieving high integration.
Jae Young Kim, Min-Ju Choi, Ho Won Jang
doaj +1 more source
Variability in Planar FeFETs—Channel Percolation Impact
IEEE Transactions on Electron Devices, 2023 sponsorship: This work was supported by the imec's Industrial Affiliation Program (IIAP). (imec's Industrial Affiliation Program (IIAP))
K. Kaczmarek +9 more
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Physical modeling of HZO-based ferroelectric field-effect transistors with a WOx channel
Frontiers in Nanotechnology, 2022 The quasistatic and transient transfer characteristics of Hf0.57Zr0.43O2 (HZO)-based ferroelectric field-effect transistors (FeFETs) with a WOx channel are investigated using a 2-D time-dependent Ginzburg-Landau model as implemented in a state-of-the-art
Xin Wen +4 more
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Defect profiling in FEFET Si:HfO2 layers [PDF]
Applied Physics Letters, 2020 Ferroelectric Si-doped HfO2 is a promising candidate for future generation memory devices. However, such devices are vulnerable to significant threshold voltage shifts resulting from charge trapping in oxide defects. We use complementary characterization and modeling techniques to reveal significant electron trapping/de-trapping behavior, together with
B. J. O'Sullivan +17 more
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Breakdown-limited endurance in HZO FeFETs: Mechanism and improvement under bipolar stress
Frontiers in Electronics, 2022 Breakdown is one of main failure mechanisms that limit write endurance of ferroelectric devices using hafnium oxide-based ferroelectric materials.
Kasidit Toprasertpong +2 more
doaj +1 more source
Using FeFETs as Resistive Synapses in Crossbar-based Analog MAC Accelerating Units
, 2023 137152Emerging non-volatile memories (eNVMs) face problems such as insufficient ROFF/RON-ratio and limited memory operating window that significantly deteriorate the precision of multiply-accumulate computations (MACs), the core computation of artificial
Borggreve, David +3 more
core +1 more source