Results 61 to 70 of about 889 (227)
IEEE Journal of the Electron Devices SocietyMetal-ferroelectric-metal-insulator-semiconductor (MFMIS) FeFETs have significant potential for use in non-volatile memory applications. This is primarily due to their compatibility with CMOS technology and reliable switching characteristics.
Junghyeon Hwang +4 more
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Improving the Scalability of Ferroelectric FET Nonvolatile Memories With High-k Spacers
IEEE Journal of the Electron Devices Society, 2022 This paper investigates scaled ferroelectric field-effect transistor (FeFET) nonvolatile memories (NVMs) with high-k spacer device design considering ferroelectric-dielectric random phase variations with TCAD atomistic simulations.
You-Sheng Liu, Pin Su
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Design and Analysis of an Ultra-Dense, Low-Leakage, and Fast FeFET-Based Random Access Memory Array
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019 High static power associated with static random access memory (SRAM) represents a bottleneck in increasing the amount of on-chip memory. Novel, emerging nonvolatile memories such as spintransfer torque magnetic random access memory (STT-RAM), resistive ...
Dayane Reis +11 more
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npj 2D Materials and Applications, 2023 This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required for their commercial uptake.
Nikolaos Aspiotis +10 more
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An experimental comparison of interface trap density in hafnium oxide-based FeFETs
Memories - Materials, Devices, Circuits and Systems, 2023 In recent years, there has been significant progress in the development of high-κ materials in the semiconductor industry. Given that the contact between the channel and the electrode has a crucial impact on reliability, the selection of electrode ...
Chaiwon Woo +4 more
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Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors
Advanced Science, EarlyView.This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung +7 more
wiley +1 more source
Ferroelectric HZO Thin Films for FEFETs: Crystal Structure‐Device Performance Relationship
Advanced Electronic MaterialsThe rapid development of hafnium zirconium oxide (HZO) thin films has established ferroelectric field‐effect transistors (FeFETs) as strong candidates for future non‐volatile memory and logic‐in‐memory (LiM) technologies.
Harsha Ragini Aturi +2 more
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Polarization Dynamics in Ferroelectrics: Insights Enabled by Machine Learning Molecular Dynamics
Advanced Science, EarlyView.Machine learning molecular dynamics is presented as a route to capture polarization switching, domain wall kinetics, topological polar textures, and polar mechanical coupling beyond the limits of conventional atomistic methods. This Perspective surveys recent progress and identifies key methodological directions, including long‐range electrostatics ...
Dongyu Bai +3 more
wiley +1 more source
Compact XOR/XNOR-Based Adders and BNNs Utilizing Drain-Erase Scheme in Ferroelectric FETs
IEEE Journal of the Electron Devices SocietyCompact and energy-efficient computing avenues such as in-memory computing and processing-in-memory (PIM) are being actively explored to address the limitations of the sparse vonNeumann computing systems.
Musaib Rafiq +2 more
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Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP2S6 and InZnO [PDF]
, 2023 In this paper, we demonstrate low-thermal-budget ferroelectric field-effect transistors (FeFETs) based on two-dimensional ferroelectric CuInP2S6 (CIPS) and oxide semiconductor InZnO (IZO).
Lee, Kyusang +7 more
core +1 more source