Results 81 to 90 of about 723 (223)

Embedding hafnium oxide based FeFETs in the memory landscape

2018 International Conference on IC Design & Technology (ICICDT), 2018
During the last decade ferroelectrics based on doped hafnium oxide emerged as promising candidates for realization of ultra-low-power non-volatile memories. Two spontaneous polarization states occurring in the material that can be altered by applying electrical fields rather than forcing a current through and the materials compatibility to CMOS ...
Stefan Slesazeck, Uwe Schroeder, Thomas Mikolajick   +2 more
openaire   +3 more sources

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

Selective growth of single-crystal TIPS-pentacene on patterned PVDF-TrFE for geometry-controlled FeFETs with enhanced characteristics [PDF]

APL Electronic Devices
We report geometry-controlled organic ferroelectric field-effect transistors (FeFETs) that combine patterned poly(vinylidene fluoride–trifluoroethylene) (PVDF–TrFE) ferroelectric lines with selectively grown single-crystalline 6,13-bis ...
Insung Bae, Cheolmin Park
doaj   +1 more source

Ferroelectric memory field-effect transistors using CVD monolayer MoS2 as resistive switching channel

, 2020
Ferroelectric field-effect transistors (FeFETs) have been considered as promising electrically switchable nonvolatile data storage elements due to their fast switching speed, programmable conductance, and high dynamic range for neuromorphic applications.
Pin-Chun Shen, Teo, Koon Hoo, Lin, Chungwei, Wang, Haozhe, Koon Hoo Teo, Chungwei Lin, Haozhe Wang, Shen, Pin-Chun, Kong, Jin Au, Jing Kong   +9 more
core   +1 more source

Impact of the interface layer on the cycling behaviour and retention of ferroelectric hafnium oxide

, 2022
S.525-529Reliability is a central aspect of hafnium oxide-based ferroelectric field effect transistors (FeFETs), which are promising candidates for embedded non-volatile memories.
Ali, T., Lederer, M., Emara, J., Lehninger, D., Seidel, K., Eng, L.M., Raffel, Y., Kämpfe, T., Olivo, R., Kühnel, K., Mertens, K., Kia, A.M.   +11 more
core   +1 more source

Logic Functionality and Circuit Design of In2Se3‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

Advanced Electronic Materials, EarlyView.
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram, Cédric Marchand, Shehr Bano Masood, Aymen Mahmoudi, Takashi Taniguchi, Kenji Watanabe, Bernard Doudin, Abdelkarim Ouerghi, Ian O'Connor, Alexei Gruverman, Jean‐François Dayen   +10 more
wiley   +1 more source

Toward Optimized In‐Memory Reinforcement Learning: Leveraging 1/f Noise of Synaptic Ferroelectric Field‐Effect‐Transistors for Efficient Exploration

Advanced Intelligent Systems
Reinforcement learning (RL), exhibiting outstanding performance in various fields, requires large amounts of data for high performance. While exploration techniques address this requirement, conventional exploration methods have limitations: complexity ...
Jangsaeng Kim, Wonjun Shin, Jiyong Yim, Dongseok Kwon, Daewoong Kwon, Jong‐Ho Lee   +5 more
doaj   +1 more source

HfO2-based ferroelectric FETs: Performance of single devices and mini-arrays

, 2022
S.146-147Ferroelectric field-effect transistors (FeFETs) based on ferroelectric (FE) HfO2 are raising strong interest as potential nonvolatile memory elements [1]. In a FeFET, the FE layer is integrated in the gate stack (Fig.
Müller, F., Dünkel, S., Breyer, E.T., Beyer, S., Mikolajick, T., Slesazeck, S., Mulaosmanovic, H., Trentzsch, M.   +7 more
core   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Parametric Analysis of Spiking Neurons in 16 nm Fin Field‐Effect Transistor Technology

Advanced Intelligent Discovery, EarlyView.
Energy efficient computing has driven a shift toward brain‐inspired neuromorphic hardware. This study explores the design of three distinct silicon neuron topologies implemented in 16 nm fin field‐Effect transistor technology. While the Axon‐Hillock design achieves gigahertz throughput, its functional fragility persists. The Morris–Lecar model captures
Logan Larsh, Raiyan Siddique, Sarah S. Sharif, Yaser Mike Banad   +3 more
wiley   +1 more source