Results 81 to 90 of about 889 (227)

Data processing capability of polarization dynamics in ferroelectric-gate transistor-based physical reservoir computing

Applied Physics Express
We investigated the relationship between the polarization characteristics of ferroelectric Hf _0.5 Zr _0.5 O _2 thin-films and data processing capability in physical reservoir computing.
Yu Ukezeki, Sota Inoue, Norifumi Fujimura, Tokuji Yokomatsu, Kensuke Kanda, Kazusuke Maenaka, Kasidit Toprasertpong, Shinichi Takagi, Takeshi Yoshimura   +8 more
doaj   +1 more source

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

Advanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar, Li Zhang, Alexander Rehmer, Marc Lupp, Subhashree Baskaran, Osama Abdelaal, Franz Müller, Nandakishor Yadav, Bing Li, Thomas Kämpfe   +9 more
wiley   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

Artificial Intelligence for Fluorite Ferroelectric Materials: From Discovery to Optimization

Advanced Electronic Materials, EarlyView.
Artificial intelligence accelerates the discovery and optimization of HfO2‐based fluorite ferroelectrics by linking synthesis, structure, properties, and device performance. Machine learning, deep‐learning analysis, and AI‐driven atomistic modeling enable predictive design, dopant screening, and closed‐loop optimization toward next‐generation ...
Faizan Ali, David Lehninger, Florencio Sánchez, Ignasi Fina   +3 more
wiley   +1 more source

Robustly Stable Ferroelectric Polarization States Enable Long-Term Nonvolatile Storage against Radiation in HfO₂‑Based Ferroelectric Field-Effect Transistors

, 2022
The ferroelectric field-effect transistors (FeFETs) with HfO2-based ferroelectric layers in the gate stacks are emerging as one of the most promising candidates for the next-generation nonvolatile memory devices due to their scalability and compatibility
Binjian Zeng (14041217), Jie Zhao (49409), Jiajia Liao (12539899), Min Liao (259333), Siwei Dai (14041214), Jianfeng Gao (380250), Yichun Zhou (1298601), Qijun Yang (11240301), Xiangli Zhong (3914882), Jinjuan Xiang (11998034), Shuaizhi Zheng (5328155)   +10 more
core   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Endurance improvements and defect characterization in ferroelectric FETs through interface fluorination

, 2022
3841HfO2-based ferroelectric FETs (FeFETs) offer excellent retention, scalability, and memory window. However, achieving high endurance is still challenging.
Raffel, Yannick, Revello Olivo, Ricardo Orlando, Eng, L.M., Ali, Tarek Nadi Ismail, Drescher, M., Müller, Franz, Pirro, L., Heitmann, J., Beyer, S., Kämpfe, Thomas, Lederer, Maximilian, Hoffmann, Raik, Seidel, Konrad, Mertens, K.   +13 more
core   +1 more source

Parametric Analysis of Spiking Neurons in 16 nm Fin Field‐Effect Transistor Technology

Advanced Intelligent Discovery, EarlyView.
Energy efficient computing has driven a shift toward brain‐inspired neuromorphic hardware. This study explores the design of three distinct silicon neuron topologies implemented in 16 nm fin field‐Effect transistor technology. While the Axon‐Hillock design achieves gigahertz throughput, its functional fragility persists. The Morris–Lecar model captures
Logan Larsh, Raiyan Siddique, Sarah S. Sharif, Yaser Mike Banad   +3 more
wiley   +1 more source

Toward Optimized In‐Memory Reinforcement Learning: Leveraging 1/f Noise of Synaptic Ferroelectric Field‐Effect‐Transistors for Efficient Exploration

Advanced Intelligent Systems
Reinforcement learning (RL), exhibiting outstanding performance in various fields, requires large amounts of data for high performance. While exploration techniques address this requirement, conventional exploration methods have limitations: complexity ...
Jangsaeng Kim, Wonjun Shin, Jiyong Yim, Dongseok Kwon, Daewoong Kwon, Jong‐Ho Lee   +5 more
doaj   +1 more source