Results 91 to 100 of about 889 (227)

Selective growth of single-crystal TIPS-pentacene on patterned PVDF-TrFE for geometry-controlled FeFETs with enhanced characteristics [PDF]

APL Electronic Devices
We report geometry-controlled organic ferroelectric field-effect transistors (FeFETs) that combine patterned poly(vinylidene fluoride–trifluoroethylene) (PVDF–TrFE) ferroelectric lines with selectively grown single-crystalline 6,13-bis ...
Insung Bae, Cheolmin Park
doaj   +1 more source

Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation

Advanced Intelligent Systems, EarlyView.
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison, Kevin Nadaud, Josquin Harrison, Guillaume F. Nataf, Laura Bégon‐Lours   +4 more
wiley   +1 more source

Device-Aware Test for Threshold Voltage Shifting in FeFET

2025 IEEE International Test Conference (ITC)
Ferroelectric Field-Effect Transistors (FeFETs) are promising candidates for non-volatile memory (NVM) technologies, especially in embedded systems and edge computing. However, due to their physical characteristics, FeFETs exhibit unique defects—such as Threshold Voltage Shifting (TVS) caused by trap charges in the oxide layer—that are not captured by ...
Wang, Changhao, Kolahimahmoudi, Nima, Bellarmino, Nicolo, Cantoro, Riccardo, Yuan, Sicong, Xun, Hanzhi, Chen, Danyang, Yin, Chujun, Taouil Mottaqiallah, Fieback, Moritz, Li, Xiuyan, Wang, Lin, Li, Chaobo, Hamdioui, Said   +13 more
openaire   +3 more sources

Two‐Dimensional Layered Oxides and the Two‐Dimensionalization of Bulk Oxides for Post‐Moore Information Devices

Information &Functional Materials, EarlyView.
This review systematically summarizes two‐dimensional layered and nonlayered oxides, focusing on their synthesis, properties, and post‐Moore applications in transistors, gate dielectrics, optoelectronics, and ferroelectric/magnetic devices. It also discusses challenges including scalable growth and interface engineering, along with future industrial ...
Xinjie Hou, Yanchang Zhou, Yushan Zhu, Xiao Zhang, Ruiqing Cheng, Jun He   +5 more
wiley   +1 more source

Ferroelectricity and Ferroionic Dynamics in Two‐Dimensional CuInP2S6

Information &Functional Materials, EarlyView.
The coupled dynamics of ferroelectric polarization and Cu‐ion migration endow CuInP2S6 with unique ferroionic functionalities. This review connects structure, switching mechanisms, and device applications to provide a unified perspective on two‐dimensional ferroionic materials.
Shangsheng Li, Shiyu Wang, Xiongfeng Wang, Qinglin Du, Ruochen Shangguan, Guoqiang Xi, Lin Wang, Wugang Liao   +7 more
wiley   +1 more source

Measurement and Analysis of Multistate Ferroelectric Transistors in 28 nm CMOS Process

IEEE Journal of the Electron Devices Society
Ferroelectric field-effect transistors (FeFETs) are strong candidates for synaptic devices in neuromorphic and in-memory computing due to their multi-level programmability, non-volatility, and complementary metal-oxide-semiconductor (CMOS) compatibility.
Sayma Nowshin Chowdhury, Alex L. Mazzoni, Xiaohang Zhang, Andreu L. Glasmann, Halid Mulaosmanovic, Stefan Dunkel, Gunda Beernink, Sven Beyer, Sina Najmaei, Sahil Shah   +9 more
doaj   +1 more source

MXene‐Based Flexible Memory and Neuromorphic Devices

Small, EarlyView.
The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Yan Yan, Shuangmei Xue, Kui Zhou, Meng Zhang, Yutong Zhang, Qi‐Jun Sun, Yi Liu, Vellaisamy A. L. Roy, Ye Zhou, Su‐Ting Han   +13 more
wiley   +1 more source

Ferroelectric memory field-effect transistors using CVD monolayer MoS2 as resistive switching channel

, 2020
Ferroelectric field-effect transistors (FeFETs) have been considered as promising electrically switchable nonvolatile data storage elements due to their fast switching speed, programmable conductance, and high dynamic range for neuromorphic applications.
Pin-Chun Shen, Teo, Koon Hoo, Lin, Chungwei, Wang, Haozhe, Koon Hoo Teo, Chungwei Lin, Haozhe Wang, Shen, Pin-Chun, Kong, Jin Au, Jing Kong   +9 more
core   +1 more source

Memristors Based on Ferroelectric Cu‐Deficient Copper Indium Thiophosphate for Multilevel Storage and Neuromorphic Computing

Small, EarlyView.
Different from CIPS with threshold switching behaviors, Cu‐deficient CIPS* shows stable non‐volatile digital and analog RS. Owing to the formation of metallic IPS at the LRS, CIPS* memristors demonstrate high ON/OFF ratio and endurance stability, which can be utilized to implement multilevel storage.
Mengdie Li, Yanyan He, Chengyang Wang, Weng Fu Io, Feng Guo, Wenjing Jie, Jianhua Hao   +6 more
wiley   +1 more source

Plasma-Enhanced Atomic Layer Deposition-Based Ferroelectric Field-Effect Transistors

IEEE Journal of the Electron Devices Society
The use of the plasma-enhanced atomic layer deposition (ALD) technique for the deposition of HfO2-based ferroelectrics has received attention in recent years primarily due to wake-up free operation.
Chinsung Park, Prasanna Venkat Ravindran, Dipjyoti Das, Priyankka Gundlapudi Ravikumar, Chengyang Zhang, Nashrah Afroze, Lance Fernandes, Yu Hsin Kuo, Jae Hur, Hang Chen, Mengkun Tian, Winston Chern, Shimeng Yu, Asif Islam Khan   +13 more
doaj   +1 more source