Results 101 to 110 of about 889 (227)

On‐Chip Learning With Crossbar Arrays for Adaptive Edge Intelligence

Advanced Computing, Volume 1, Issue 1, December 2026.
Memristor crossbar arrays implemented on chip combines memory, computation, and learning. They allow for adapting the neural weights using the incoming sensor data. This architecture reduces data movement leading to low‐latency, energy‐efficient intelligence in edge while being reliability‐aware co‐design across devices, circuits, and algorithms that ...
Alex James
wiley   +1 more source

Ferroelectric Polarization Enabled Threshold Voltage Modulation in High Electron Mobility Transistor

Advanced Functional Materials, Volume 36, Issue 73, 10 September 2026.
A comprehensive model is developed to capture the coupled electrostatics of a ferroelectric capacitor and a metal‐insulator‐semiconductor high electron mobility transistor (MISHEMT) connected in ferroelectric‐metal high electron mobility transistor (FeMHEMT) configuration.
Wentian Gao, Andre Wachowiak, Thomas Mikolajick, Uwe Schroeder, Roberto Guido   +4 more
wiley   +1 more source

Lattice Scattering Related Flicker Noise in Silicon-Doped Hafnium Oxide FeFETs

This article presents an investigation of silicondoped hafnium oxide based FeFETs. Defects influence the transistor current perceptible with its fluctuation, which is called Flicker noise.
Raffel, Yannick, De, Sourav, Hessler, Daniel, Revello Olivo, Ricardo Orlando, Seidel, Konrad, Hoffmann, Raik   +5 more
core   +1 more source

Recent advancements and progress in development of ferroelectric field effect transistor: A review

Memories - Materials, Devices, Circuits and Systems
The robust application of ferroelectric materials in various disciplines has resulted in the development of significantly more accurate and potent FeFETs, which have the potential to deliver more promising non-volatile memory and synaptic devices than ...
Mandeep Singh, Nakkina Sai Teja, Tarun Chaudhary, Balwinder Raj   +3 more
doaj   +1 more source

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

Physical Insights on Steep Slope FEFETs including Nucleation-Propagation and Charge Trapping

, 2019
We present a kinetics-based analysis of the steep slope operation of ferroelectric (FE) FETs built on (i) a statistical multidomain nucleation-propagation mechanism of FE polarization switching and (ii) charge trapping in the high- K FE oxide.
Roussel, P., M. I. Popovici, Groeseneken, Guido, N. Horiguchi, A. S. Verhulst, J. Van Houdt, Kaczer, B., P. Roussel, Truijen, Brecht, Horiguchi, N., M. Garcia Bardon, Thesberg, M., Parvais, B., L.-A. Ragnarsson, Ragnarsson, L-Å., Popovici, M.I., Md Nur K. Alam, Alam, Md Nur Kutubul, M. Thesberg, Verhulst, Anne, B. Kaczer, Xiang, Yang, Van Houdt, Jan, B. Parvais, Y. Xiang, G. Groeseneken, B. Truijen, Garcia Bardon, M.   +27 more
core   +1 more source

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon‐Lours   +7 more
wiley   +1 more source

Postdeposition Annealing‐Induced Suppression of Interfacial Dead Layers and Oxygen Vacancies in Source‐Tied Covering Metal‐Integrated Oxide‐Channel FeFETs

Postdeposition annealing (PDA) with an insulating Al 2 O 3 capping layer is demonstrated as a crystallization strategy for reliable source‐tied covering ...
Suhwan Lim, Kwangyou Seo, Sanghun Jeon, Sanghyun Park, Jinho Ahn, Minyong Lee, Sangho Lee, Wanki Kim, Hongrae Joh, Daewon Ha   +9 more
core   +1 more source

Logic Functionality and Circuit Design of In2Se3‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram, Cédric Marchand, Shehr Bano Masood, Aymen Mahmoudi, Takashi Taniguchi, Kenji Watanabe, Bernard Doudin, Abdelkarim Ouerghi, Ian O'Connor, Alexei Gruverman, Jean‐François Dayen   +10 more
wiley   +1 more source

Two‐Dimensional Materials for Flexible Neuromorphic Devices: Materials, Engineering Strategies, Architectures, and Emerging Applications

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
This review explains how atomically thin materials can combine information storage, processing, and mechanical flexibility in neuromorphic devices. It connects material properties and engineering strategies with device architecture, synaptic behavior, and performance under bending.
Junzhe Tang, Letian Dai
wiley   +1 more source