Results 101 to 110 of about 723 (223)

Unveiling Time-Dependent Dynamics in MFMIS FeFETs

IEEE Journal of the Electron Devices Society
Metal–ferroelectric–metal–insulator–semiconductor (MFMIS) ferroelectric field-effect transistors (FeFETs) using an amorphous indium–tin–zinc-oxide (a-ITZO) channel and Hf ${}_{\mathbf {0.5}}$ Zr ${}_{\mathbf {0.5}
Simin Chen, Taewon Jin, Xinkai Sun, Gijun Ju, Zewei Wang, Jaehoon Han, Younghyun Kim   +6 more
doaj   +1 more source

Physical Insights on Steep Slope FEFETs including Nucleation-Propagation and Charge Trapping

, 2019
We present a kinetics-based analysis of the steep slope operation of ferroelectric (FE) FETs built on (i) a statistical multidomain nucleation-propagation mechanism of FE polarization switching and (ii) charge trapping in the high- K FE oxide.
Roussel, P., M. I. Popovici, Groeseneken, Guido, N. Horiguchi, A. S. Verhulst, J. Van Houdt, Kaczer, B., P. Roussel, Truijen, Brecht, Horiguchi, N., M. Garcia Bardon, Thesberg, M., Parvais, B., L.-A. Ragnarsson, Ragnarsson, L-Å., Popovici, M.I., Md Nur K. Alam, Alam, Md Nur Kutubul, M. Thesberg, Verhulst, Anne, B. Kaczer, Xiang, Yang, Van Houdt, Jan, B. Parvais, Y. Xiang, G. Groeseneken, B. Truijen, Garcia Bardon, M.   +27 more
core   +1 more source

A visible‐to‐infrared miniaturized indium selenide spectrometer enabled by a gate‐tunable spectral response matrix

InfoScience, EarlyView.
Traditional light‐analyzing tools, known as spectrometers, are typically too bulky and expensive to fit into portable electronics like smartphones or wearables. In this study, we developed a microscopic, high‐performance spectrometer using a material called Indium Selenide combined with smart algorithms to accurately analyze light from the visible to ...
Jing Chen, Zhen‐Hua Wang, Zheng Zhang, Hengji Li, Xiao‐Ming Wu, Tian‐Ling Ren, Hong Liu, Min Jin, Lin Han   +8 more
wiley   +1 more source

MXene‐Based Flexible Memory and Neuromorphic Devices

Small, EarlyView.
The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Yan Yan, Shuangmei Xue, Kui Zhou, Meng Zhang, Yutong Zhang, Qi‐Jun Sun, Yi Liu, Vellaisamy A. L. Roy, Ye Zhou, Su‐Ting Han   +13 more
wiley   +1 more source

Recent advancements and progress in development of ferroelectric field effect transistor: A review

Memories - Materials, Devices, Circuits and Systems
The robust application of ferroelectric materials in various disciplines has resulted in the development of significantly more accurate and potent FeFETs, which have the potential to deliver more promising non-volatile memory and synaptic devices than ...
Mandeep Singh, Nakkina Sai Teja, Tarun Chaudhary, Balwinder Raj   +3 more
doaj   +1 more source

Memristors Based on Ferroelectric Cu‐Deficient Copper Indium Thiophosphate for Multilevel Storage and Neuromorphic Computing

Small, EarlyView.
Different from CIPS with threshold switching behaviors, Cu‐deficient CIPS* shows stable non‐volatile digital and analog RS. Owing to the formation of metallic IPS at the LRS, CIPS* memristors demonstrate high ON/OFF ratio and endurance stability, which can be utilized to implement multilevel storage.
Mengdie Li, Yanyan He, Chengyang Wang, Weng Fu Io, Feng Guo, Wenjing Jie, Jianhua Hao   +6 more
wiley   +1 more source

Record High Polarization at 2 V and Imprint‐Free Operation in Superlattice HfO2‐ZrO2 by Proper Tuning of Ferro and Antiferroelectricity

Advanced Materials Technologies, Volume 11, Issue 11, 5 June 2026.
Low‐power ferroelectric capacitors, based on superlattice HfO2‐ZrO2 is reported. With proper tuning of ferro and antiferroelectricity, an imprint‐free high switchable polarization charge (2Pr of 76 µC/cm2) is obtained with 2MV/cm leading to linear analog weight update and non‐volatile retention, providing a design guideline for emerging non‐volatile ...
Xinye Li, Padma Srivari, Mari Honkanen, Turkka Salminen, Sayani Majumdar   +4 more
wiley   +1 more source

Enhanced memory characteristics in organic ferroelectric field-effect transistors through thermal annealing

AIP Advances, 2015
We report on the memory characteristics of organic ferroelectric field-effect transistors (FeFETs) using spin-coated poly(vinylidene difluoride/trifluoroethylene) (P(VDF/TrFE)) as a gate insulating layer.
Ryo Sugano, Tomoya Tashiro, Tomohito Sekine, Kenjiro Fukuda, Daisuke Kumaki, Shizuo Tokito   +5 more
doaj   +1 more source

Experimental Analysis and Mathematical Modeling of Program Efficiency in Gate-Side Injection Type FeFETs Depending on the Gate Interlayer

We experimentally analyze the incremental step pulse programming (ISPP) characteristics of gate-side injection type MIFIS FeFETs, which feature a metal - gate interlayer (G.IL) - ferroelectrics - channel interlayer (Ch.IL) - Si stack, with a focus on the
Shin, Seokjoong, Kim, Hoon, Kim, Giuk, Kim, Wanki, Kim, Kwangsoo, Seo, Kwangyou, Ha, Daewon, Kim, Taeho, Park, Sanghyun, Jeon, Sanghun, Choi, Hyojun, Ahn, Jinho   +11 more
core   +1 more source

Impact of High-K Deposition Process on the Noise Immunity of FeFETs and their Applicability Towards In-Memory-Computing

This article reports the impact of the high-k material deposition process on the low-frequency noise and reliability of hafnium oxide-based (HfO2) ferroelectric field-effect transistors (FeFET).
Raffel, Yannick, De, Sourav, Lehninger, David, Heitmann, J., Kämpfe, Thomas, Parmar, Vivek, Lederer, Maximilian, Chohan, Talha, Pirro, Luca, Seidel, Konrad, Suri, Manan M.K., Olivo, Ricardo Revello   +11 more
core   +1 more source