Results 121 to 130 of about 723 (223)

Impact of Random Phase Distribution on Ferroelectric Tunnel Field-Effect Transistors With Mitigation Strategies for Compute-in-Memory Applications

IEEE Access
This work presents, for the first time, an investigation of the impact of random phase distribution on ferroelectric (FE) tunnel field-effect transistors (FeTFETs).
Jiwon Park, Jaemin Yeom, Jin Wook Lee, Minjeong Ryu, Changhyeon Park, Woo Young Choi   +5 more
doaj   +1 more source

FeFET-Based MirrorBit Cell for High-Density NVM Storage

IEEE Transactions on Electron Devices
HfO2-based Ferroelectric field-effect transistor (FeFET) has become a center of attraction for non-volatile memory applications because of their low power, fast switching speed, high scalability, and CMOS compatibility. In this work, we show an n-channel FeFET-based Multibit memory, termed MirrorBit, which effectively doubles the chip density via ...
Paritosh Meihar, Rowtu Srinu, Vivek Saraswat, Sandip Lashkare, Halid Mulaosmanovic, Ajay Kumar Singh, Stefan Dünkel, Sven Beyer, Udayan Ganguly   +8 more
openaire   +2 more sources

Reconfigurable ferroelectric hafnium oxide FeFET fabricated in 28 nm CMOS technology for mmWave applications

113116In this work we introduce reconfigurable multifinger ferroelectric field effect transistors (FeFETs) which were fabricated using 28 nm CMOS technology.
Raffel, Yannick, Le, Quanghuy, Yin, Xunzhao, Kämpfe, Thomas, Lederer, Maximilian, Ni, Kai, Khoa Huynh, Dang, Gerlach, Gerald, Abdulazhanov, Sukhrob   +8 more
core   +1 more source

Dual‐logic‐in‐memory implementation with orthogonal polarization of van der Waals ferroelectric heterostructure

InfoMat
The rapid advancement of AI‐enabled applications has resulted in an increasing need for energy‐efficient computing hardware. Logic‐in‐memory is a promising approach for processing the data stored in memory, wherein fast and efficient computations are ...
Jingjie Niu, Sumin Jeon, Donggyu Kim, Sungpyo Baek, Hyun Ho Yoo, Jie Li, Ji‐Sang Park, Yoonmyung Lee, Sungjoo Lee   +8 more
doaj   +1 more source

Ferroelectric Field Effect Transistors (FEFETs) With Gate Stack Engineering for Embedded and Storage Memory Applications

Advanced data-intensive computing models demand memory technologies that exceed conventional von Neumann architectures, requiring high-density and low-power capabilities. Among these emerging technologies, the ferroelectric field effect transistor (FEFET)
Park, Chinsung
core  

Interface‐Engineered TiO2 Interlayer for Reliable Hafnia‐Based MFMIS FeFETs

Advanced Electronic Materials
We investigated a TiO2‐engineered interfacial strategy to enhance the stability and reliability of hafnia‐based ferroelectric field‐effect transistors (FeFETs) employing a metal‐ferroelectric‐metal‐insulator‐semiconductor (MFMIS) architecture.
Changhyeon Han, Been Kwak, Hyun‐Min Kim, Dahye Yu, Daewoong Kwon   +4 more
doaj   +1 more source

Nanogate ferroelectric transistors with ultralow operation voltage of 0.6 V. [PDF]

Sci Adv
Meng D, Ma X, Shen Z, Xu L, Peng LM, Qiu C.   +5 more
europepmc   +1 more source

TiO₂ nanolayer-assisted top-interface engineering for disturbance-free FeFETs: a blueprint for future van der Waals memory. [PDF]

Nano Converg
Kang H, Kwak J, Kim G, Lee S, Kim Y, Park S, Lim S, Seo K, Kim W, Ha D, Ahn J, Jeon S.   +11 more
europepmc   +1 more source

Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and Computing. [PDF]

ACS Nano
Das A, Senapati A, Kumar G, Lou ZF, Müller J, Maskeen JS, Chang YT, Tewari M, Agarwal A, Paul A, Raffel Y, Maikap S, Kao KH, Agarwal T, Lashkare S, Lu D, Larrieu G, Lee MH, De S.   +18 more
europepmc   +1 more source

Towards Artificial Intelligence Hardware With 3D Integrated Ferroelectric Transistors. [PDF]

Small
Seok H, Kim G, Son S, Choi H, Kim T.
europepmc   +1 more source