Results 121 to 130 of about 889 (227)

Cross-Temperature FeFETs Enabling Long- and Short-Term Memory for Reservoir Computing Network

IEEE Journal of the Electron Devices Society
Hardware neural networks based on emerging nonvolatile memory are promising candidates to overcome the Von Neumann computing bottleneck. This study investigates the device characteristics and reliability of ferroelectric field-effect transistors (FeFETs)
Bo Chen, Yifan Wu, Yuwei Qu, Anlin Liu, Yuzhe Hu, Pengpeng Sang, Jixuan Wu, Xuepeng Zhan, Jiezhi Chen   +8 more
doaj   +1 more source

Direct Triboelectric Programming of a Ferroelectric Synaptic Transistor for Neuromorphic Tactile Perception

Small, Volume 22, Issue 50, 7 September 2026.
Triboelectric signals directly program a ferroelectric synaptic transistor, enabling cumulative polarization‐controlled conductance modulation and neuromorphic tactile perception based on force‐ and frequency‐dependent mechanical stimuli. ABSTRACT Triboelectric nanogenerators provide a direct electrical interface to mechanical stimuli, yet most ...
Inhwa Lee, Jiwoon Jung, Youngmin Lee, Sejoon Lee   +3 more
wiley   +1 more source

Trapping Dynamics and Endurance in HfO2-FeFETs: An Insight from Charge Pumping

20142017We investigate endurance degradation in hafnium oxide (HfO₂)-based ferroelectric field effect transistors (FeFETs) by analyzing interface (Nit) and near-interface oxide traps (Nox) using a two-level charge pumping (CP) technique.
Raffel, Yannick, Chakrabarti, Bhaswar, Senapati, Asim, De, Sourav, Padovani, Andrea, Lederer, Maximilian, Kumar, Gautham, Seidel, Konrad, Paul, Agniva, Rana, SK Masud, Das, Apu, Chen, Chun Cheng   +11 more
core   +1 more source

Memory-Efficient Spiking Neural Networks Using MLC FeFETs and Mixed Quantization

This paper proposes a memory-efficient approach for Spiking Neural Networks (SNNs) using mixed quantization and Multi-Level Cell (MLC) FeFETs in in-memory computing (IMC) architectures.
Müller, Franz, Laleni, Nellie, Cuñarro Podestá, Gonzalo Federico, Kämpfe, Thomas, Vardar, Alptekin, Yadav, Nandakishor   +5 more
core   +1 more source

Ferroelectric Field Effect Transistors (FEFETs) With Gate Stack Engineering for Embedded and Storage Memory Applications

Advanced data-intensive computing models demand memory technologies that exceed conventional von Neumann architectures, requiring high-density and low-power capabilities. Among these emerging technologies, the ferroelectric field effect transistor (FEFET)
Park, Chinsung
core   +1 more source

Investigation of Ferroelectric Grain Sizes and Orientations in Pt/CaxSr1–xBi2Ta2O9/Hf–Al–O/Si High Performance Ferroelectric-Gate Field-Effect-Transistors

, 2019
Electron backscatter diffraction (EBSD) was applied to investigate the grain size and orientation of polycrystalline CaxSr1–xBi2Ta2O9 (CxS1–xBT) films in ferroelectric-gate field-effect transistors (FeFETs). The CxS1–xBT FeFETs with x =
Wei Zhang, Mitsue Takahashi, Shigeki Sakai   +2 more
core   +1 more source

Performance Evaluation and Improvement of Ferroelectric Field-Effect Transistor Memory [PDF]

, 2015
Flash memory is reaching scaling limitations rapidly due to reduction of charge in floating gates, charge leakage and capacitive coupling between cells which cause threshold voltage fluctuations, short retention times, and interference.
Yu, Hyung Suk
core  

Reconfigurable ferroelectric hafnium oxide FeFET fabricated in 28 nm CMOS technology for mmWave applications

113116In this work we introduce reconfigurable multifinger ferroelectric field effect transistors (FeFETs) which were fabricated using 28 nm CMOS technology.
Raffel, Yannick, Le, Quanghuy, Yin, Xunzhao, Kämpfe, Thomas, Lederer, Maximilian, Ni, Kai, Khoa Huynh, Dang, Gerlach, Gerald, Abdulazhanov, Sukhrob   +8 more
core   +1 more source

Advanced Ferroelectric Field Effect Transistors for Memory and AI Applications

In the past decades, the demand for high-performance large-capacity memory technologies has been arisen quickly due to the rapid growth of data generation.
Zijian Zhao (21088694)
core   +1 more source

Ferroelectric Hafnium Oxide for In-Memory Computing: Advancing Devices, Circuit Architectures, and System-Level Integration. [PDF]

Micromachines (Basel)
He C, Li W, Li J, Li Q, Xie Z, Du T.
europepmc   +1 more source