Results 141 to 150 of about 889 (227)

Effect of Top Al$_2$O$_3$ Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al$_2$O$_3$/Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_x$/Si (MIFIS) Gate Structure

We investigate the effect of top Al2O3 interlayer thickness on the memory window (MW) of Si channel ferroelectric field-effect transistors (Si-FeFETs) with TiN/Al$_2$O$_3$/Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_x$/Si (MIFIS) gate structure.
Wang, Yanrong, Hu, Tao, Xu, Hao, Yang, Jia, Dai, Saifei, Ding, Yajing, Jia, Xinpei, Bai, Mingkai, Chen, Zeqi, Zhao, Yuanyuan, Han, Kai, Han, Runhao, Zhang, Jing, Wang, Wenwu, Yang, Shuai, Ke, Xiaoyu, Wang, Xiaolei, Sun, Xiaoqing, Chai, Junshuai, Ye, Tianchun   +19 more
core  

High-throughput design of optoelectronic-ferroelectric heterostructure from materials to sensor-memory-computing devices. [PDF]

Natl Sci Rev
Zhong G, Yan J, Tang M, Deng H, Tan Y, Zhong X, Li C, Fan Z, Wang J, Li J.   +9 more
europepmc   +1 more source

Ferroelectrics Hybrids: Harnessing Multifunctionality of 2D Semiconductors in the Post-Moore Era. [PDF]

Adv Mater
Qiu H, Qian X, Qian D, Samorì P.
europepmc   +1 more source

Te/Fe₃GaTe₂ 1D-2D Ferroelectric Heterojunction Transistors Enabling Ultrafast Multi-State Switching for Workpiece Surface Defect Inspection. [PDF]

Nanomaterials (Basel)
Wang S, He Z, Wang T, Gao Z, Wang L, Zhang J, Jiang Y.   +6 more
europepmc   +1 more source

Advancing the Frontiers of HfO₂-Based Ferroelectric Memories: Innovative Concepts from Materials to Applications. [PDF]

Adv Mater
Zhou Z, Li L, Feng Y, Wang X, Zheng Z, Jiao L, Zheng H, Shi Y, Ang KW, Gong X.   +9 more
europepmc   +1 more source

Ferroelectric Transistors: from Materials Innovation to Intelligent Electronic Systems. [PDF]

Adv Mater
Li E, Wang W, Liu Y, Wang R, Luo C, Zhou H, Chen S, Chen S, Xie Z, Zhu K, Li W, Chu J.   +11 more
europepmc   +1 more source

Homogeneous integration of two-dimensional material-based optoelectronic neurons and ferroelectric synapses for neuromorphic vision. [PDF]

Nat Commun
Wang J, Liu K, Tiw PJ, He D, Yu L, Wang B, Bai J, Zhang T, Shan X, Yang Y, Wang Y, Wang Y, Tao Y, Zhang X, Yang Y.   +14 more
europepmc   +1 more source

HfZrOx 기반 FeFET의 임베디드 메모리 응용을 위한 계면층 스캐빈징 및 회복 기법 연구

학위논문(박사) - 한국과학기술원 : 전기및전자공학부, 2025.8,[viii, 83 p. :]The increasing demands for data-intensive applications, such as artificial intelligence (AI), the Internet of Things (IoT), and big data processing, have intensified the need to overcome fundamental ...
Kim, Bong Ho
core  

Recent Advances and Perspectives on Field-Effect Transistors for Artificial Visual Neuromorphic Systems. [PDF]

Adv Sci (Weinh)
Yaqian L, Menghua L, Yihang X, Manyu Z, Chunkang L, Xiaozhou L, Yi D, Lingli W, Liying J, Yuanyuan H, Huipeng C, Lang J.   +11 more
europepmc   +1 more source

Reconfigurable single-walled carbon nanotube ferroelectric field-effect transistors. [PDF]

Nat Commun
Rhee D, Kim KH, Zheng J, Song S, Peng LM, Olsson RH, Kang J, Jariwala D.   +7 more
europepmc   +1 more source