Reconfigurable Sequential-Logic-in-Memory Implementation Utilizing Ferroelectric Field-Effect Transistors. [PDF]
ACS NanoNiu J, Kim D, Li J, Lyu J, Lee Y, Lee S.
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New-Generation Ferroelectric AlScN Materials. [PDF]
Nanomicro LettZhang Y, Zhu Q, Tian B, Duan C.
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Emergence of ferroelectricity in Sn-based perovskite semiconductor films by iminazole molecular reconfiguration. [PDF]
Nat CommunLiu Y +12 more
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An Extended Kolmogorov-Avrami-Ishibashi (EKAI) Model to Simulate Dynamic Characteristics of Polycrystalline-Ferroelectric-Gate Field-Effect Transistors. [PDF]
Materials (Basel)Sakai S, Takahashi M.
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Self-Powered Neuromorphic Touch Sensors Based on Triboelectric Devices: Current Approaches and Open Challenges. [PDF]
SmallTorricelli F, Pace G.
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Precise structure and polarization determination of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> with electron ptychography. [PDF]
Nat CommunGao X +12 more
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Polarization Pruning: Reliability Enhancement of Hafnia-Based Ferroelectric Devices for Memory and Neuromorphic Computing. [PDF]
Adv Sci (Weinh)Koo RH +11 more
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Report on final chip with CMOS and BEOL FeFET
IBM and HZB will deliver a report illustrating the structural integration cross section flow and the functionality of the ...
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Reconfigurable neuromorphic functions in antiferroelectric transistors through coupled polarization switching and charge trapping dynamics. [PDF]
Nat CommunGao J +6 more
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An Energy Efficient Memory Cell for Quantum and Neuromorphic Computing at Low Temperatures. [PDF]
Nano LettHan Y +9 more
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