Results 1 to 10 of about 214 (106)

High‐performance P(VDF‐TrFE)/BaTiO3 nanocomposite based ferroelectric field effect transistor (FeFET) for memory and switching applications

Nano Select, 2021
The ferroelectric field effect transistor (FeFET) using Poly (vinylidene fluoride‐trifluoroethylene)/Barium titanate [P(VDF‐TrFE)/BaTiO3] polymer nanocomposite as dielectric layer, has been fabricated and characterized.
Soney Varghese, Uvais Valiyaneerilakkal, Kulwant Singh   +2 more
exaly   +2 more sources

High-Mobility and Reliability Ultra-Thin-Channel Oxide Semiconductor Field-Effect Transistors for Chip-Interconnect-Embedded Logic and Ferroelectric Memory. [PDF]

Adv Mater
BEOL‐compatible bilayer heterojunction oxide channel dual‐mode, memory‐logic ferroelectric transistor is fabricated to address long‐standing challenges of mobility and threshold voltage trade‐off by suppressing interfacial defects. This approach not only advances oxide semiconductors toward reliable high‐performance BEOL transistors but also opens new ...
Chen CK, Hooda S, Sivan M, Wan Q, Villena MA, Beltrando B, Xu Z, Fang Z, Zamburg E, Roldán JB, Larcher L, Thareja G, Thean AV.   +12 more
europepmc   +2 more sources

Ferroelectric Devices for In-Memory and In-Sensor Computing. [PDF]

Adv Sci (Weinh)
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Fang H, Xie R, Cao Q, Yan S, Wang X, Zheng L.   +5 more
europepmc   +2 more sources

Direct Triboelectric Programming of a Ferroelectric Synaptic Transistor for Neuromorphic Tactile Perception. [PDF]

Small
Triboelectric signals directly program a ferroelectric synaptic transistor, enabling cumulative polarization‐controlled conductance modulation and neuromorphic tactile perception based on force‐ and frequency‐dependent mechanical stimuli. ABSTRACT Triboelectric nanogenerators provide a direct electrical interface to mechanical stimuli, yet most ...
Lee I, Jung J, Lee Y, Lee S.
europepmc   +2 more sources

Neuromorphic Near-Sensor and In-Sensor Computing Enabled by Next-Generation Material-Based Sensors. [PDF]

Adv Sci (Weinh)
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Jung SY, Kim GY, Kim S, Seo H, Lee SG, Won SM, Rhee D, Kang J.   +7 more
europepmc   +2 more sources

Ultrathin Sub-5-nm Hf₁₋ₓZrₓO₂ for a Stacked Gate-all-Around Nanowire Ferroelectric FET With Internal Metal Gate

IEEE Journal of the Electron Devices Society, 2021
This study investigates a device’s ability to boost its on-state current and subthreshold behavior using a ferroelectric field-effect transistor (FeFET) with an ultrathin sub-5-nm Hf1-xZrxO2 (HZO). A conventional field-effect transistor (FET) with
Shen-Yang Lee, Chia-Chin Lee, Yi-Shan Kuo, Shou-Wei Li, Tien-Sheng Chao   +4 more
doaj   +1 more source

Ultrathin MoS₂-Channel FeFET Memory With Enhanced Ferroelectricity in HfZrO₂ and Body-Potential Control

IEEE Journal of the Electron Devices Society, 2022
We have experimentally demonstrated memory operation of a HfO2-based ferroelectric FET (FeFET) with an ultrathin MoS2 channel and bottom-gate structure. ZrO2 seed layer enhances ferroelectricity in HfZrO2 by post deposition anneal process.
Jiawen Xiang, Wen Hsin Chang, Takuya Saraya, Toshiro Hiramoto, Toshifumi Irisawa, Masaharu Kobayashi   +5 more
doaj   +1 more source

Review of ferroelectric field‐effect transistors for three‐dimensional storage applications

Nano Select, 2021
The ferroelectric field‐effect transistor (FeFET) is one of the leading contenders to succeed charge‐trap‐based flash memory (CTF) devices in the current vertically‐integrated NAND flash storage market.
Hyeon Woo Park, Jae‐Gil Lee, Cheol Seong Hwang   +2 more
doaj   +1 more source

Low-Voltage Operating Ferroelectric FET with Ultrathin IGZO Channel for High-Density Memory Application

IEEE Journal of the Electron Devices Society, 2020
We have fabricated and demonstrated ultrathin In-Ga-Zn-O (IGZO) channel ferroelectric HfO2 field effect transistor (FET) with memory operation. Ultrathin-body IGZO ferroelectric FET (FeFET) shows high mobility and nearly ideal subthreshold slop with ...
Fei Mo, Yusaku Tagawa, Chengji Jin, MinJu Ahn, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi   +6 more
doaj   +1 more source

READ-Optimized 28nm HKMG Multibit FeFET Synapses for Inference-Engine Applications

IEEE Journal of the Electron Devices Society, 2022
This paper reports 2bits/cell ferroelectric FET (FeFET) devices with 500 ns write pulse of maximum amplitude 4.5V for inference-engine applications. FeFET devices were fabricated using GlobalFoundries 28nm high-k-metal-gate (HKMG) process flow on a 300mm
Sourav De, Franz Muller, Hoang-Hiep Le, Maximilian Lederer, Yannick Raffel, Tarek Ali, Darsen Lu, Thomas Kampfe   +7 more
doaj   +1 more source