Results 1 to 10 of about 267 (149)

Towards Artificial Intelligence Hardware With 3D Integrated Ferroelectric Transistors. [PDF]

Small
Modern AI workloads demand hardware that mitigates the data‐movement bottleneck of von Neumann architectures. Here, we demonstrate a 4‐tier monolithic 3D (M3D) platform vertically integrating IGZO access transistors with Hf₀.5Zr₀.5O2 ferroelectric FETs.
Seok H, Kim G, Son S, Choi H, Kim T.
europepmc   +2 more sources

Low-Voltage Operating Ferroelectric FET with Ultrathin IGZO Channel for High-Density Memory Application

IEEE Journal of the Electron Devices Society, 2020
We have fabricated and demonstrated ultrathin In-Ga-Zn-O (IGZO) channel ferroelectric HfO2 field effect transistor (FET) with memory operation. Ultrathin-body IGZO ferroelectric FET (FeFET) shows high mobility and nearly ideal subthreshold slop with ...
Fei Mo, Yûsaku Tagawa, Chengji Jin
exaly   +3 more sources

Recent Advances and Perspectives on Field-Effect Transistors for Artificial Visual Neuromorphic Systems. [PDF]

Adv Sci (Weinh)
This review presents a comprehensive overview of FET‐based visual neuromorphic systems, covering their semiconductor materials, core device architectures, and operating mechanisms. It further reviews their implementation in emulating biological visual functions, addresses current technological challenges, and outlines future development directions. The
Yaqian L, Menghua L, Yihang X, Manyu Z, Chunkang L, Xiaozhou L, Yi D, Lingli W, Liying J, Yuanyuan H, Huipeng C, Lang J.   +11 more
europepmc   +2 more sources

READ-Optimized 28nm HKMG Multibit FeFET Synapses for Inference-Engine Applications

IEEE Journal of the Electron Devices Society, 2022
This paper reports 2bits/cell ferroelectric FET (FeFET) devices with 500 ns write pulse of maximum amplitude 4.5V for inference-engine applications. FeFET devices were fabricated using GlobalFoundries 28nm high-k-metal-gate (HKMG) process flow on a 300mm
Sourav De, Franz Muller, Hoang-Hiep Le, Maximilian Lederer, Yannick Raffel, Tarek Ali, Darsen Lu, Thomas Kampfe   +7 more
doaj   +2 more sources

A Ferroelectric FET-Based Processing-in-Memory Architecture for DNN Acceleration

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019
This paper presents a ferroelectric FET (FeFET)-based processing-in-memory (PIM) architecture to accelerate the inference of deep neural networks (DNNs).
Yun Long, Daehyun Kim, Edward Lee
exaly   +3 more sources

Ultrathin Sub-5-nm Hf₁₋ₓZrₓO₂ for a Stacked Gate-all-Around Nanowire Ferroelectric FET With Internal Metal Gate

IEEE Journal of the Electron Devices Society, 2021
This study investigates a device’s ability to boost its on-state current and subthreshold behavior using a ferroelectric field-effect transistor (FeFET) with an ultrathin sub-5-nm Hf1-xZrxO2 (HZO). A conventional field-effect transistor (FET) with
Shen-Yang Lee, Chia-Chin Lee, Yi-Shan Kuo, Shou-Wei Li, Tien-Sheng Chao   +4 more
doaj   +1 more source

High‐performance P(VDF‐TrFE)/BaTiO3 nanocomposite based ferroelectric field effect transistor (FeFET) for memory and switching applications

Nano Select, 2021
The ferroelectric field effect transistor (FeFET) using Poly (vinylidene fluoride‐trifluoroethylene)/Barium titanate [P(VDF‐TrFE)/BaTiO3] polymer nanocomposite as dielectric layer, has been fabricated and characterized.
Uvais Valiyaneerilakkal, Subash Cherumannil Karumuthil, Kulwant Singh, Loksani Bhanuprakash, Rama Komaragiri, Soney Varghese   +5 more
doaj   +1 more source

Ultrathin MoS₂-Channel FeFET Memory With Enhanced Ferroelectricity in HfZrO₂ and Body-Potential Control

IEEE Journal of the Electron Devices Society, 2022
We have experimentally demonstrated memory operation of a HfO2-based ferroelectric FET (FeFET) with an ultrathin MoS2 channel and bottom-gate structure. ZrO2 seed layer enhances ferroelectricity in HfZrO2 by post deposition anneal process.
Jiawen Xiang, Wen Hsin Chang, Takuya Saraya, Toshiro Hiramoto, Toshifumi Irisawa, Masaharu Kobayashi   +5 more
doaj   +1 more source

Review of ferroelectric field‐effect transistors for three‐dimensional storage applications

Nano Select, 2021
The ferroelectric field‐effect transistor (FeFET) is one of the leading contenders to succeed charge‐trap‐based flash memory (CTF) devices in the current vertically‐integrated NAND flash storage market.
Hyeon Woo Park, Jae‐Gil Lee, Cheol Seong Hwang   +2 more
doaj   +1 more source

Efficient Erase Operation by GIDL Current for 3D Structure FeFETs With Gate Stack Engineering and Compact Long-Term Retention Model

IEEE Journal of the Electron Devices Society, 2022
We have fabricated junctionless N-type silicon-on-insulator (SOI) ferroelectric-HfO2 field effect transistors (FeFETs) with overlap and underlap structures between gate and drain/source regions to investigate the role of gate-induced-drain-leakage (GIDL)
Fei Mo, Jiawen Xiang, Xiaoran Mei, Yoshiki Sawabe, Takuya Saraya, Toshiro Hiramoto, Chun-Jung Su, Vita Pi-Ho Hu, Masaharu Kobayashi   +8 more
doaj   +1 more source