Results 41 to 50 of about 156,693 (147)

Laser transfer of sol-gel ferroelectric thin films using an ITO release layer [PDF]

, 2011
A new laser transfer process is reported which allows damage-free transfer of ferroelectric thin films from a growth substrate directly to a target substrate.
Bansal, A., D. Bhattacharyya, Yeatman, E. M., A. Bansal, R.V. Wright, Bhattacharyya, Debabrata, P.B. Kirby, G. Dou, Dou, G., A.S. Holmes, Hergert, R., E.M. Yeatman, R. Hergert, Holmes, A. S., Wright, Robert V., Kirby, Paul B.   +15 more
core   +1 more source

Enhancement of Ion-Sensitive Field-Effect Transistors through Sol-Gel Processed Lead Zirconate Titanate Ferroelectric Film Integration and Coplanar Gate Sensing Paradigm

Chemosensors
To facilitate the utility of field effect transistor (FET)-type sensors, achieving sensitivity enhancement beyond the Nernst limit is crucial. Thus, this study proposed a novel approach for the development of ferroelectric FETs (FeFETs) using lead ...
Dong-Gyun Mah, Seong-Moo Oh, Jongwan Jung, Won-Ju Cho   +3 more
doaj   +1 more source

Examination of Ferroelectric FET for “Cold” Nonvolatile Memory

, 2023
HfZrOx-based Si n-/p-type ferroelectric fieldeffect transistors (n/pFEFETs) were investigated from 300 to 82 K with pulse measurements, which disclosed device physics at low temperatures.
Seung-Yeop Ahn, Kim, Seong-Kwang, Park, Min Hyuk, Sang-Hyeon Kim, Jae-Hoon Han, Min Hyuk Park, Han, Jae-Hoon, Bong Ho Kim, Kuk, Song-Hyeon, Ahn, Seung-Yeop, Kim, Joon Pyo, Kim, Sang-Hyeon, Han, Seung-Min, Kim, Bong Ho, Song-Hyeon Kuk, Joon Pyo Kim, Seung-Min Han, Seong-Kwang Kim   +17 more
core   +1 more source

The Effect of Ferroelectric/Dielectric Capacitance Ratio on Short-Term Retention Characteristics of MFMIS FeFET

IEEE Journal of the Electron Devices Society
Metal-ferroelectric-metal-insulator-semiconductor (MFMIS) FeFETs have significant potential for use in non-volatile memory applications. This is primarily due to their compatibility with CMOS technology and reliable switching characteristics.
Junghyeon Hwang, Giuk Kim, Hongrae Joh, Jinho Ahn, Sanghun Jeon   +4 more
doaj   +1 more source

Triple‐Level Content‐Addressable Vertical NAND Flash Memory

Advanced Science, EarlyView.
Commercial triple‐level‐cell V‐NAND flash memory is transformed into a compact content‐addressable memory by directly exploiting its eight threshold‐voltage states. A parity‐split search scheme preserves storage density while enabling reliable multi‐level and don't‐care matching. Parallel word‐line search delivers up to 24‐fold higher throughput and 54.
Sung‐Ho Park, Jiseong Im, Yeongheon Yang, Ryun‐Han Koo, Jonghyun Ko, Mingyun Oh, Dongbeen Shin, Gyuweon Jung, Jong‐Ho Lee   +8 more
wiley   +1 more source

Giant dielectric permittivity in ferroelectric thin films : domain wall ping pong [PDF]

, 2015
This study was supported by the National Key Basic Research Program of China (No. 2014CB921004), the National Natural Science Foundation of China (Nos.
Scott, James Floyd, Wei Zhang, D., Seong Hwang, C., Jian Meng, X., Hyuk Park, M., Jin Kim, Y., Quan Jiang, A., Yoo, S.   +7 more
core   +1 more source

Mechanisms of Temperature‐Dependent Hysteresis in Freestanding BaTiO3/MoS2 Heterostructures

Advanced Science, EarlyView.
Freestanding ferroelectric BaTiO3 membranes are combined with monolayer MoS2 into 2D field‐effect transistors. At room temperature they provide ultrahigh‐κ gating with steep subthreshold swing and minimal hysteresis. Upon cooling, strong ferroelectric switching produces two stable memory states with long retention times.
Thomas Pucher, Federico Mompeán, Víctor Rouco, Carlos León, Jacobo Santamaría, Carmen Munuera, Mar García‐Hernández, Andres Castellanos‐Gomez   +7 more
wiley   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Current percolation path impacting switching behavior of ferroelectric FETs

, 2021
S.118-119The difference in the switching behavior of program and erase operation in hafnium oxide based ferroelectric FETs (FeFETs) highlights insufficiency of models solely based on the ferroelectric hysteresis.
Halid Mulaosmanovic, Johannes Muller, Müller, S., Sven Beyer, Olivo, R., Ricardo Olivo, Tarek Ali, Müller, F., Ali, T., Hoffmann, R., Dünkel, S., Gerlach, G., Franz Muller, Stefan Muller, Lederer, M., Gerald Gerlach, Seidel, K., Beyer, S., Raik Hoffmann, Konrad Seidel, Stefan Dunkel, Müller, J., Maximilian Lederer, Mulaosmanovic, H.   +23 more
core   +1 more source