Results 51 to 60 of about 267 (149)

Parametric Analysis of Spiking Neurons in 16 nm Fin Field‐Effect Transistor Technology

Advanced Intelligent Discovery, EarlyView.
Energy efficient computing has driven a shift toward brain‐inspired neuromorphic hardware. This study explores the design of three distinct silicon neuron topologies implemented in 16 nm fin field‐Effect transistor technology. While the Axon‐Hillock design achieves gigahertz throughput, its functional fragility persists. The Morris–Lecar model captures
Logan Larsh, Raiyan Siddique, Sarah S. Sharif, Yaser Mike Banad   +3 more
wiley   +1 more source

MEFET-Based CAM/TCAM for Memory-Augmented Neural Networks

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Memory-augmented neural networks (MANNs) require large external memories to enable long-term memory storage and retrieval. Content-addressable memory (CAM) is a type of memory used for high-speed searching applications and is well-suited for MANNs ...
Sai Sanjeet, Jonathan Bird, Bibhu Datta Sahoo   +2 more
doaj   +1 more source

Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation

Advanced Intelligent Systems, EarlyView.
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison, Kevin Nadaud, Josquin Harrison, Guillaume F. Nataf, Laura Bégon‐Lours   +4 more
wiley   +1 more source

FeSATLock: An Energy Efficient and SAT Attack Resilient Logic Locking Design With FeFET LUT Architecture for Enhanced Hardware Security [PDF]

Boolean satisfiability (SAT) attacks have been proven to be highly effective against logic locking techniques that secure intellectual property (IP). Prior research has improved the output corruptibility and SAT attack resiliency of logic locking, but ...
Birudu, Venu, Rao Kadiyam, Tirumala, Vaddi, Ramesh, Sibai, Fadi N., Japa, Aditya, Gonuguntla, Venkateswarlu   +5 more
core   +1 more source

First Demonstration of Ultra-High Precision 4Kb 28nm HKMG 1FeFET-1T Based Memory Array Macro for Highly Scaled Deep Learning Applications

, 2022
This paper reports high precision, highly linear MAC operation conducted on 28nm ferroelectric (Fe) FET (FeFET) based 4Kb computing-in-memory (CIM) core with 1FeFET-1T structure.
Sourav De (12294287)
core   +1 more source

Two‐Dimensional Layered Oxides and the Two‐Dimensionalization of Bulk Oxides for Post‐Moore Information Devices

Information &Functional Materials, EarlyView.
This review systematically summarizes two‐dimensional layered and nonlayered oxides, focusing on their synthesis, properties, and post‐Moore applications in transistors, gate dielectrics, optoelectronics, and ferroelectric/magnetic devices. It also discusses challenges including scalable growth and interface engineering, along with future industrial ...
Xinjie Hou, Yanchang Zhou, Yushan Zhu, Xiao Zhang, Ruiqing Cheng, Jun He   +5 more
wiley   +1 more source

MXene‐Based Flexible Memory and Neuromorphic Devices

Small, EarlyView.
The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Yan Yan, Shuangmei Xue, Kui Zhou, Meng Zhang, Yutong Zhang, Qi‐Jun Sun, Yi Liu, Vellaisamy A. L. Roy, Ye Zhou, Su‐Ting Han   +13 more
wiley   +1 more source

Spike-Time Dependent Plasticity in HfO-Based Ferroelectric FET Synapses

This paper reports a study on spike-timing-dependent plasticity (STDP) in high-k metal gate (HKMG) based ferroelectric Field effect transistors (FeFET).
Raffel, Yannick, Chakrabarti, Bhaswar, De, Sourav, Lederer, Maximilian, Chohan, Talha, Pirro, Luca, Seidel, Konrad, Masud Rana, Sk, Roy, Sourodeep   +8 more
core   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, Volume 36, Issue 41, 21 May 2026.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Fabrication of low-loss diamond power FET using giant poralization of ferroelectrics

, 2020
本研究では、ワイドギャップ半導体ダイヤモンドに対し、強誘電体をゲートとした電界効果トランジスタ（FeFET）構造を形成し、従来型パワーデバイスに比する優位性について検証を行った。 強誘電体ゲートを用いたダイヤモンドチャネルの電圧変調において、電流ON/OFF比10E+8を実証するに至った。また、強誘電体ゲートの残留分極を利用したダイヤモンドFeFETの疑似ノーマリオフ動作に関して、現在までに最長70時間に至るオフ状態の保持を実証した。 以上の結果は ...
30401897, Kawae, Takeshi, 川江, 健, 79672   +3 more
core   +1 more source