Principles and Challenges for Binary Oxide Based Ferroelectric Memory FeFET
, 2022 S.8-11In this paper, we give a perspective and recent overview of the emerging memory FeFET by shading the light on different aspects of the memory operation.
Ali, T. +11 more
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Enlargement of Memory Window of Si Channel FeFET by Inserting Al2O3 Interlayer on Ferroelectric Hf0.5Zr0.5O2 [PDF]
, 2023 In this work, we demonstrate the enlargement of the memory window of Si channel FeFET with ferroelectric Hf0.5Zr0.5O2 by gate-side dielectric interlayer engineering. By inserting an Al2O3 dielectric interlayer between TiN gate metal and ferroelectric Hf0.
Hu, Tao +14 more
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Single-port ferroelectric FET (FeFET) that performs write and read operations on the same electrical gate prevents its wide application in tunable analog electronics and suffers from read disturb, especially in the high-threshold voltage (VTH) state as ...
Zhouhang Jiang (17388702) +17 more
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Deposition and characterisation of bismuth layer-structured ferroelectric films [PDF]
, 2006 Bismuth layer-structured ferroelectrics have been recognised as promising film materials for ferroelectric random access memory application due to their excellent fatigue resistance and other electrical properties.
Hu, Xiaobing
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FeFET Based Nonvolatile TCAM and DRAM Development [PDF]
, 2018 Ferroelectric Field Effect Transistor (FeFET) is a promising nonvolatile device which provides high integration density, fast programming speed, and excellent CMOS compatibility.
Bayram, Ismail
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Assessment of Advanced Non-Volatile Fefet Memories Based on Hafnium-Oxide
The ESA project11European Space Agency contract number 4000132931/20/NL/FE "Assessment of Advanced NonVolatile Memories" is about the identification and evaluation of emerging non-volatile memory technology for future missions. A detailed market analysis
Havel, Viktor +3 more
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FeSATLock: An Energy Efficient and SAT Attack Resilient Logic Locking Design With FeFET LUT Architecture for Enhanced Hardware Security [PDF]
Boolean satisfiability (SAT) attacks have been proven to be highly effective against logic locking techniques that secure intellectual property (IP). Prior research has improved the output corruptibility and SAT attack resiliency of logic locking, but ...
Birudu, Venu +5 more
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High-Pressure Deuterium Annealing Effect on HfO2-Based Gate-All-Around Ferroelectric FET
This work demonstrates high-pressure deuterium annealing (HPDA) to improve the performance and reliability of HfO2 based gate-all-around ferroelectric FET (GAA-FeFET).
Kang, Min-Ho +8 more
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Analysis of the Measurement and Modeling of a Digital Inverter Based on a Ferroelectric Transistor [PDF]
, 2009 The use of ferroelectric materials for digital memory devices is widely researched and implemented, but ferroelectric devices also possess unique characteristics that make them have interesting and useful properties in digital circuits.
Phillips, Thomas A. +3 more
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Ferroelectric tunnel fet switch and memory
A Ferroelectric tunnel FET switch as ultra-steep (abrupt) switch with subthreshold swing better than the MOSFET limit of 60 mV/decade at room temperature combining two key principles: ferroelectric gate stack and band-to-band tunneling in gated p-i-n ...
Ionescu, Mihai Adrian
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