Results 81 to 90 of about 156,693 (147)

FeFET-Based MirrorBit Cell for High-Density NVM Storage

The HfO2-based ferroelectric field-effect transistor (FeFET) has become a center of attraction for nonvolatile memory application because of their low power, fast switching speed, high scalability, and CMOS compatibility.
Srinu, Rowtu, Lashkare, Sandip, Singh, Ajay Kumar, Saraswat, Vivek, Dunkel, Stefan, Beyer, Sven, Mulaosmanovic, Halid, Meihar, Paritosh, Ganguly, Udayan   +8 more
core   +1 more source

Multi-level storage in cleaved-gate ferroelectric FETs investigated by 3D phase-field-based quantum transport simulation

In this work, we investigate the feasibility of cleaved -gate ferroelectric FET (CG-FeFET) as multi -level cell (MLC) memory devices, by conducting 3 -dimensional quantum transport simulations based on time-dependentGinzburg-Landau equation, and the non -
Jang, Jeonghwan, Lee, Hyeongu, Shin, Mincheol   +2 more
core   +1 more source

Thermally Stable HfO₂-Based Ferroelectric Transistors for CMOS-Compatible Energy-Efficient Neuromorphic Integrated Circuits. [PDF]

Nanomaterials (Basel)
Tikhonenko FV, Tarkov M, Popov VP, Miakonkikh AV, Rudenko KV.   +4 more
europepmc   +1 more source

Towards Artificial Intelligence Hardware With 3D Integrated Ferroelectric Transistors. [PDF]

Small
Seok H, Kim G, Son S, Choi H, Kim T.
europepmc   +1 more source

Amphibian-inspired neuromorphic dynamic vision systems based on ferroelectric field-effect transistor. [PDF]

Nat Commun
Zhai Y, Chen P, Luo Y, Lv Z, Ding G, Yang J, Zheng M, Zhou Y, Chai Y, Han ST.   +9 more
europepmc   +1 more source

Stable Analog Weight Programming in Single-Crystalline van der Waals Ferroelectric Transistors for Reliable Computing-in-Memory. [PDF]

Adv Mater
Li M, Yang FS, Liu Y, Zhang C, Li E, Yang J, Lin CY, Liu H, Luo C, Chien HC, Chang YM, Yang JC, Shen CH, Chueh YL, Li J, Zhang J, Wu JL, Chiu PW, Lin YF.   +18 more
europepmc   +1 more source

Variation Tolerant and Energy-Efficient Charge Domain Compute-in-Memory Array with Binary and Multi-Level Cell Ferroelectric FET

In this work, we present a variation-tolerant and energy-efficient charge-domain Ferroelectric FET (FeFET) based Compute-in-Memory (CiM) array design that is compatible with both binary and multi-level cell memory sensing.
Niemier, Michael Thaddeus, Kämpfe, Thomas, Duan, Jiahui, Read, James, Yu, Shimeng, Imani, Mohsen, Xu, Yixin, Ni, Kai, Gong, Xiao, Lu, Anni, Narayanan, Vijaykrishnan, Zhao, Zijian   +11 more
core   +1 more source

Time-Domain Simulation and Optimization of the Memory Window for HZO-Based FeFETs Using the NLS Model. [PDF]

Micromachines (Basel)
Han S, Lü W, Liang Y, Dai T.
europepmc   +1 more source

Nanogate ferroelectric transistors with ultralow operation voltage of 0.6 V. [PDF]

Sci Adv
Meng D, Ma X, Shen Z, Xu L, Peng LM, Qiu C.   +5 more
europepmc   +1 more source

Light polarization-based electro-optic memory. [PDF]

Nat Commun
Wan Q, Zhao S, Tang B, Yu ZG, Fang Z, Leong JF, Xu Z, Zhang YW, Zamburg E, Thean AV.   +9 more
europepmc   +1 more source