Results 61 to 70 of about 267 (149)

Ferroelectric HfO2/ZrO2 Superlattice Capacitors With High Center to Edge Wafer‐Scale Uniformity

Advanced Electronic Materials, Volume 12, Issue 10, 25 May 2026.
“Enhanced wafer‐scale device uniformity on 150 mm wafers is demonstrated using ferroelectric superlattice HfO2/ZrO2 (HZO) capacitors, as compared to conventional solid solution HZO capacitors. Superlattice HZO exhibits improved ferroelectric memory properties, including a broader polarization window, greater endurance, reduced leakage, and superior ...
Oscar Kaatranen, Patrik Eskelinen, Sampo Inkinen, Olli‐Pekka Kilpi, Karl‐Magnus Persson   +4 more
wiley   +1 more source

Ferroelectric Field-Effect Transistors Based on WSe2/CuInP2S6 Heterostructures for Memory Applications

, 2021
Emerging data-intensive applications need to process data in situ by combining the logical operations and data storage in a single chip. In this work, the high-quality bulk CuInP2S6 (CIPS) and WSe2 crystals were synthesized by the chemical vapor ...
Qingqing Sun (280493), Lin Chen, David Wei Zhang (1683634), David Wei Zhang, Jihong Bian, Xixi Jiang (3192510), Hao Zhu, Xiaobing Hu (817805), Hao Zhu (56502), Kai Zhang, Qingqing Sun, Lin Chen (54305), Xiaobing Hu, Xixi Jiang, Jihong Bian (2811634), Kai Zhang (102844)   +15 more
core   +1 more source

Multilevel Operation of Ferroelectric FET Memory Arrays Considering Current Percolation Paths Impacting Switching Behavior

, 2023
757760This letter reports multi-level-cell (MLC) operation of ferroelectric FETs (FeFET) arranged in AND-connected memory arrays with a bit-error rate (BER) of 4% when writing a random data pattern.
Müller, Johannes, Revello Olivo, Ricardo Orlando, Stefan Dünkel, Dünkel, Stefan, Johannes Müller, Altawil, Abdelrahman, Ricardo Olivo, Gerlach, Gerald, Franz Müller, Tarek Ali, Müller, Franz, De, Sourav, Sourav De, Gerald Gerlach, Kämpfe, Thomas, Raik Hoffmann, Lederer, Maximilian, Hoffmann, Raik, Maximilian Lederer, Halid Mulaosmanovic, Ali, Tarek, Sven Beyer, Thomas Kämpfe, Beyer, Sven, Mulaosmanovic, Halid, Abdelrahman Altawil, Seidel, Konrad, Konrad Seidel   +27 more
core   +1 more source

Design and Simulation of Short Channel Si:HfO2 Ferroelectric Field Effect Transistor (FeFET)

, 2014
Non-volatile memories using ferroelectric capacitors, known as Ferroelectric Random Access Memory (FRAM) have been studied for many years, but they suffer from loss of data during read out process.
Smaili, Idris H
core  

Powering Disturb-Free Reconfigurable Computing and Tunable Analog Electronics with Dual-Port Ferroelectric FET

Single-port ferroelectric FET (FeFET) that performs write and read operations on the same electrical gate prevents its wide application in tunable analog electronics and suffers from read disturb, especially in the high-threshold voltage (VTH) state as ...
Zhouhang Jiang (17388702), Vijaykrishnan Narayanan (17388717), Zijian Zhao (484183), Scott Meninger (17388705), Kai Ni (581986), Rajiv Joshi (695509), Shan Deng (198656), Yixin Xu (255926), Dominik Kleimaier (17388711), Sven Beyer (9433468), Mohamed Mohamed (233255), Muhammad Shaffatul Islam (12369733), Hussam Amrouch (17388714), Swetaki Chatterjee (17388699), Halid Mulaosmanovic (3690826), Yogesh Singh Chauhan (14390580), Stefan Duenkel (17388708), Yi Xiao (135101)   +17 more
core   +1 more source

Assessment of Advanced Non-Volatile Fefet Memories Based on Hafnium-Oxide

The ESA project11European Space Agency contract number 4000132931/20/NL/FE "Assessment of Advanced NonVolatile Memories" is about the identification and evaluation of emerging non-volatile memory technology for future missions. A detailed market analysis
Havel, Viktor, Plattner, Markus P., Slesazeck, Stefan, Steffens, Michael   +3 more
core   +1 more source

Ambipolar MoS2 Field Effect Transistors with Negative Photoconductivity and High Responsivity Using an Ultrathin Epitaxial Ferroelectric Gate [PDF]

: Ferroelectric field effect transistors (FeFETs), characterized by their low power consumption and polarization effect, can be employed in photodetectors based on 2D materials.
Wang, Zhe, Dai, Liyan, Jiang, Zhuangde, Hou, Zhenfei, Xie, Ya‐Hong, Wang, Yankun, Sun, Yanxiao, Niu, Gang, Zhao, Libo, Ren, Wei, Zhao, Jinyan, Jiang, Luyue   +11 more
core   +1 more source

Quasi-Nondestructive Read Out of Ferroelectric Capacitor Polarization by Exploiting a 2TnC Cell to Relax the Endurance Requirement

, 2023
In this work, we propose a 2TnC ferroelectric random access memory (FeRAM) cell design to realize the quasi- nondestructive readout (QNRO) of ferroelectric polarization (PFE) in a capacitor, which can relax the endurance requirement of the ferroelectric ...
Yi Xiao (15194822), Tzu-Jung Huang (15194884), Zubair Faris (15194859), Yixin Xu (15194867), Kai Ni (15194944), Shan Deng (15194536), Vijaykrishnan Narayanan (15194917), Zijian Zhao (15194858)   +7 more
core   +1 more source

Multiscale Modeling of Ferroelectric Memories: Insights into Performances and Reliability

, 2018
Despite large efforts in research of HfO 2 -based ferroelectric (FE) random access memories (FRAM), mechanisms underlying the device behavior of and its reliability (premature degradation) are poorly understood. To tackle this issue, we used a multiscale
Valerio Di Lecce, Dipankar Pramanik, Larcher L., Luca Larcher, Pesiu M., Pramanik D., Di Lecce V., Milan Pesiu   +7 more
core   +1 more source

Multi-level storage in cleaved-gate ferroelectric FETs investigated by 3D phase-field-based quantum transport simulation

In this work, we investigate the feasibility of cleaved -gate ferroelectric FET (CG-FeFET) as multi -level cell (MLC) memory devices, by conducting 3 -dimensional quantum transport simulations based on time-dependentGinzburg-Landau equation, and the non -
Jang, Jeonghwan, Lee, Hyeongu, Shin, Mincheol   +2 more
core   +1 more source