Results 61 to 70 of about 156,693 (147)

Logic Functionality and Circuit Design of In2Se3‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram, Cédric Marchand, Shehr Bano Masood, Aymen Mahmoudi, Takashi Taniguchi, Kenji Watanabe, Bernard Doudin, Abdelkarim Ouerghi, Ian O'Connor, Alexei Gruverman, Jean‐François Dayen   +10 more
wiley   +1 more source

Next-generation ferroelectric memories based on FE-HfO2

, 2022
S.233-236In recent years, and with the discovery of ferroelectricity in hafnium oxide, it was possible to scale down ferroelectric memory cells in both transistor and capacitor configurations.
Müller, Johannes, Müller, S., Mikolajick, T., Flachowsky, S., Slesazeck, S., Polakowski, Patrick   +5 more
core   +1 more source

Two‐Dimensional Materials for Flexible Neuromorphic Devices: Materials, Engineering Strategies, Architectures, and Emerging Applications

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
This review explains how atomically thin materials can combine information storage, processing, and mechanical flexibility in neuromorphic devices. It connects material properties and engineering strategies with device architecture, synaptic behavior, and performance under bending.
Junzhe Tang, Letian Dai
wiley   +1 more source

Spike-Time Dependent Plasticity in HfO-Based Ferroelectric FET Synapses

This paper reports a study on spike-timing-dependent plasticity (STDP) in high-k metal gate (HKMG) based ferroelectric Field effect transistors (FeFET).
Raffel, Yannick, Chakrabarti, Bhaswar, De, Sourav, Lederer, Maximilian, Chohan, Talha, Pirro, Luca, Seidel, Konrad, Masud Rana, Sk, Roy, Sourodeep   +8 more
core   +1 more source

Neuromorphic Hardware Materials for Intelligent Artificial Perception and Multimodal Fusion: From Sensing to Cognition

Interdisciplinary Materials, Volume 5, Issue 5, Page 699-727, September 2026.
Neuromorphic hardware enables the integration of sensing, memory, and computing for intelligent artificial perception. Recent advances in multimodal fusion further highlight its potential for embodied intelligence and next‐generation human–machine interfaces.
Yixin Zhu, Yuqing Hu, Changjin Wan, Qing Wan   +3 more
wiley   +1 more source

Carrier Mobility Enhancement in Two‐Dimensional Semiconductor

Interdisciplinary Materials, Volume 5, Issue 5, Page 796-833, September 2026.
In this review, we comprehensively describe recent progress in carrier mobility enhancement strategies for 2D semiconductor‐based field‐effect transistors considering the role of intrinsic defects, electrode contact interfaces, dielectric engineering, and lattice strain engineering.
Huchanghui Zuo, Yuehao Li, Xiangkai Liu, Chao Tan, Guohua Hu, Mingdong Dong, Zegao Wang   +6 more
wiley   +1 more source

Performance investigation and optimization of Si:HfO2 FeFETs on a 28 nm bulk technology

, 2022
S.248-251The film thickness dependence of ferroelectric Si:HfO2 (10 nm and 30 nm) was studied with a focus on ferroelectric field effect transistor (FeFET) memory applications based on a 28 nm bulk technology.
Mikolajick, T., Yurchuk, E., Zaka, A., Mueller, S., Slesazeck, S., Müller, J., Herrmann, T.   +6 more
core   +1 more source

Two‐Dimensional Layered Oxides and the Two‐Dimensionalization of Bulk Oxides for Post‐Moore Information Devices

Information &Functional Materials, Volume 3, Issue 3, Page 207-232, September 2026.
This review systematically summarizes two‐dimensional layered and nonlayered oxides, focusing on their synthesis, properties, and post‐Moore applications in transistors, gate dielectrics, optoelectronics, and ferroelectric/magnetic devices. It also discusses challenges including scalable growth and interface engineering, along with future industrial ...
Xinjie Hou, Yanchang Zhou, Yushan Zhu, Xiao Zhang, Ruiqing Cheng, Jun He   +5 more
wiley   +1 more source

Ferroelectricity and Ferroionic Dynamics in Two‐Dimensional CuInP2S6

Information &Functional Materials, Volume 3, Issue 3, Page 233-267, September 2026.
The coupled dynamics of ferroelectric polarization and Cu‐ion migration endow CuInP2S6 with unique ferroionic functionalities. This review connects structure, switching mechanisms, and device applications to provide a unified perspective on two‐dimensional ferroionic materials.
Shangsheng Li, Shiyu Wang, Xiongfeng Wang, Qinglin Du, Ruochen Shangguan, Guoqiang Xi, Lin Wang, Wugang Liao   +7 more
wiley   +1 more source

Ferroelectric HfO2 Thin Films for FeFET Memory Devices [PDF]

, 2016
Silicon-doped hafnium oxide has been shown to exhibit ferroelectric properties under the certain small thicknesses with appropriate applied stress and annealing conditions.
McGlone, Joseph F
core   +1 more source