Results 21 to 30 of about 156,693 (147)

Compact FeFET Circuit Building Blocks for Fast and Efficient Nonvolatile Logic-in-Memory

IEEE Journal of the Electron Devices Society, 2020
Due to their CMOS compatibility, hafnium oxide based ferroelectric field-effect transistors (FeFET) gained remarkable attention recently, not only in the context of nonvolatile memory applications but also for being an auspicious candidate for novel ...
Evelyn T. Breyer, Halid Mulaosmanovic, Jens Trommer, Thomas Melde, Stefan Dunkel, Martin Trentzsch, Sven Beyer, Stefan Slesazeck, Thomas Mikolajick   +8 more
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FeFET-Based Content-Addressable Storage Class Memory: Device Variation and High-Temperature Compatibility

, 2023
Hafnium oxide (HfO2)-based ferroelectric field effect transistors (FeFETs) have revolutionized the emerging non-volatile memory area, especially with the potential to replace flash memories for several applications.
Yannick Raffel (12758051), Franz Müller (13271700), Bhaswar Chakrabarti (14677373), Ricardo Olivo (16840962), Thomas Kämpfe (16776009), Maximilian Lederer (13271703), Masud S K Rana (14431639), Sourav De (12294287), Konrad Seidel (13271706), Athira Sunil (16120204), Raik Hoffmann (12758106)   +10 more
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A Study on the Temperature-Dependent Operation of Fluorite-Structure-Based Ferroelectric HfO2 Memory FeFET: Pyroelectricity and Reliability

, 2022
S.2981-2987We report on the high-temperature operation and reliability of the Si-doped hafnium oxide (HSO) ferroelectric FET (FeFET) emerging memory. In this study, we explore the role of high-temperature operation of the ferroelectric (FE) material on ...
Mart, C., Metzger, J., Steinke, P., Eng, L.M., Pätzold, B., Kämpfe, T., Olivo, R., Czernohorsky, M., Ali, T., Müller, F., Hoffmann, R., Lederer, M., Lehninger, D., Seidel, K., Rudolph, M., Müller, J., Kühnel, K., Binder, R.   +17 more
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A Ferroelectric FET-Based Processing-in-Memory Architecture for DNN Acceleration

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019
This paper presents a ferroelectric FET (FeFET)-based processing-in-memory (PIM) architecture to accelerate the inference of deep neural networks (DNNs).
Yun Long, Daehyun Kim, Edward Lee, Priyabrata Saha, Burhan Ahmad Mudassar, Xueyuan She, Asif Islam Khan, Saibal Mukhopadhyay   +7 more
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Novel Fluorite Structure Ferroelectric and Antiferroelectric Hafnium Oxide-based Nonvolatile Memories [PDF]

, 2022
The ferroelectricity in fluorite structure based hafnium oxide (HfO2) material expanded the horizon for realizing nonvolatile ferroelectric memory concepts. Due to the excellent HfO2 ferroelectric film properties, CMOS compatibility, and scalability; the
Ali, Tarek
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Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET

, 2022
Art.222903, 6 S.The recent discovery of ferroelectricity in thin film HfO2 materials renewed the interest in ferroelectric FET (FeFET) as an emerging nonvolatile memory providing a potential high speed and low power Flash alternative.
Büttner, T., Polakowski, P., Steinke, P., Kämpfe, T., Pätzold, B., Hanisch, N., Czernohorsky, M., Ali, T., Hoffmann, R., Riedel, S., Seidel, K., Rudolph, M., Calvo, J., Löhr, D., Müller, J., Kühnel, K., Thrun, X.   +16 more
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A FeFET with a novel MFMFIS gate stack: towards energy-efficient and ultrafast NVMs for neuromorphic computing

, 2021
The discovery of ferroelectricity in the fluorite structure based hafnium oxide (HfO2) material sparked major efforts for reviving the ferroelectric field effect transistor (FeFET) memory concept. A Novel metal-ferroelectric-metal-ferroelectric-insulator-
Lehninger, David, Revello, R., Eng, L.M., Zimmermann, K., Ali, T., Müller, F., Hoffmann, R., Seidel, K., Rudolph, Matthias, Revello, Ricardo, Rudolph, M., Kuehnel, Kati, Hoffmann, Raik, Czernohorsky, Malte, Kühnel, K., Kaempfe, Thomas, Mertens, K., Zimmermann, Katrin, Ali, Tarek, Mueller, Franz, Kämpfe, T., Houdt, J. van, Czernohorsky, M., Van Houdt, Jan, Oehler, S., Lehninger, D., Eng, Lukas M., Seidel, Konrad, Oehler, Sebastian, Mertens, Konstantin   +29 more
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Non-volatile hybrid optical phase shifter driven by a ferroelectric transistor

, 2022
Optical phase shifters are essential elements in photonic integrated circuits (PICs) and function as a direct interface to program the PIC. Non-volatile phase shifters which can retain information without a power supply, are highly desirable for low ...
Rui Tang (298719), Kouhei Watanabe (6560756), Shinichi Takagi (6410516), Masahiro Fujita (355423), Hanzhi Tang (14362041), Kasidit Toprasertpong (13141774), Mitsuru Takenaka (6410513)   +6 more
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Ferroelectric Nonvolatile Memory Based on Two-Dimensional van der Waals CuInP2S6 and WSe2 Heterojunction [PDF]

, 2022
Department of Electrical EngineeringFerroelectric non-volatile memory has been extensively investigated due to the promising properties such as low-voltage and low-power consumption.
Kim, Jeonghyeon
core  

A Novel Dual Ferroelectric Layer Based MFMFIS FeFET with Optimal Stack Tuning Toward Low Power and High-Speed NVM for Neuromorphic Applications

, 2022
S.106-107A Novel MFMFIS FeFET based on dual MFM/MFIS integration in a single gate stack is reported. The external top and bottom contacts, dual ferroelectric (FE) layers, and tailored MFM/MFIS area ratio (AFI) shows flexible stack tuning for improved ...
Ali, T., Hoffmann, R., Seidel, K., Eng, L.M., Rudolph, M., Zimmermann, K., Mühle, U., Houdt, J. van, Müller, J., Kühnel, K., Czernohorsky, M., Mertens, K.   +11 more
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