Results 21 to 30 of about 267 (149)

Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET

, 2022
Art.222903, 6 S.The recent discovery of ferroelectricity in thin film HfO2 materials renewed the interest in ferroelectric FET (FeFET) as an emerging nonvolatile memory providing a potential high speed and low power Flash alternative.
Büttner, T., Polakowski, P., Steinke, P., Kämpfe, T., Pätzold, B., Hanisch, N., Czernohorsky, M., Ali, T., Hoffmann, R., Riedel, S., Seidel, K., Rudolph, M., Calvo, J., Löhr, D., Müller, J., Kühnel, K., Thrun, X.   +16 more
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On the Physical Mechanism of Transient Negative Capacitance Effect in Deep Subthreshold Region

IEEE Journal of the Electron Devices Society, 2019
We have investigated the physical mechanism of steep subthreshold slope (SS) in ferroelectric FET (FeFET) based on a dynamic ferroelectric (FE) model without traversing the negative capacitance (NC) region of the S-shaped polarization-voltage predicted ...
Chengji Jin, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi   +3 more
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A FeFET with a novel MFMFIS gate stack: towards energy-efficient and ultrafast NVMs for neuromorphic computing

, 2021
The discovery of ferroelectricity in the fluorite structure based hafnium oxide (HfO2) material sparked major efforts for reviving the ferroelectric field effect transistor (FeFET) memory concept. A Novel metal-ferroelectric-metal-ferroelectric-insulator-
Lehninger, David, Revello, R., Eng, L.M., Zimmermann, K., Ali, T., Müller, F., Hoffmann, R., Seidel, K., Rudolph, Matthias, Revello, Ricardo, Rudolph, M., Kuehnel, Kati, Hoffmann, Raik, Czernohorsky, Malte, Kühnel, K., Kaempfe, Thomas, Mertens, K., Zimmermann, Katrin, Ali, Tarek, Mueller, Franz, Kämpfe, T., Houdt, J. van, Czernohorsky, M., Van Houdt, Jan, Oehler, S., Lehninger, D., Eng, Lukas M., Seidel, Konrad, Oehler, Sebastian, Mertens, Konstantin   +29 more
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Compact FeFET Circuit Building Blocks for Fast and Efficient Nonvolatile Logic-in-Memory

IEEE Journal of the Electron Devices Society, 2020
Due to their CMOS compatibility, hafnium oxide based ferroelectric field-effect transistors (FeFET) gained remarkable attention recently, not only in the context of nonvolatile memory applications but also for being an auspicious candidate for novel ...
Evelyn T. Breyer, Halid Mulaosmanovic, Jens Trommer, Thomas Melde, Stefan Dunkel, Martin Trentzsch, Sven Beyer, Stefan Slesazeck, Thomas Mikolajick   +8 more
doaj   +1 more source

A Novel Dual Ferroelectric Layer Based MFMFIS FeFET with Optimal Stack Tuning Toward Low Power and High-Speed NVM for Neuromorphic Applications

, 2022
S.106-107A Novel MFMFIS FeFET based on dual MFM/MFIS integration in a single gate stack is reported. The external top and bottom contacts, dual ferroelectric (FE) layers, and tailored MFM/MFIS area ratio (AFI) shows flexible stack tuning for improved ...
Ali, T., Hoffmann, R., Seidel, K., Eng, L.M., Rudolph, M., Zimmermann, K., Mühle, U., Houdt, J. van, Müller, J., Kühnel, K., Czernohorsky, M., Mertens, K.   +11 more
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Ferroelectric Nonvolatile Memory Based on Two-Dimensional van der Waals CuInP2S6 and WSe2 Heterojunction [PDF]

, 2022
Department of Electrical EngineeringFerroelectric non-volatile memory has been extensively investigated due to the promising properties such as low-voltage and low-power consumption.
Kim, Jeonghyeon
core  

Examination of Ferroelectric FET for “Cold” Nonvolatile Memory

, 2023
HfZrOx-based Si n-/p-type ferroelectric fieldeffect transistors (n/pFEFETs) were investigated from 300 to 82 K with pulse measurements, which disclosed device physics at low temperatures.
Seung-Yeop Ahn, Kim, Seong-Kwang, Park, Min Hyuk, Sang-Hyeon Kim, Jae-Hoon Han, Min Hyuk Park, Han, Jae-Hoon, Bong Ho Kim, Kuk, Song-Hyeon, Ahn, Seung-Yeop, Kim, Joon Pyo, Kim, Sang-Hyeon, Han, Seung-Min, Kim, Bong Ho, Song-Hyeon Kuk, Joon Pyo Kim, Seung-Min Han, Seong-Kwang Kim   +17 more
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A Novel Split-Gate Ferroelectric FET for a Compact and Energy Efficient Neuron

, 2022
Neuromorphic computing—brain-inspired computing—is considered a next-generation computing architecture that can overcome problems caused by the high computing cost of modern data science.
Shin, Eui Joong, Kim, Hyung Jin, Lee, Tae In, Cho, Byung Jin, Lee, Gyusoup, Kim, Seongho   +5 more
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Current percolation path impacting switching behavior of ferroelectric FETs

, 2021
S.118-119The difference in the switching behavior of program and erase operation in hafnium oxide based ferroelectric FETs (FeFETs) highlights insufficiency of models solely based on the ferroelectric hysteresis.
Halid Mulaosmanovic, Johannes Muller, Müller, S., Sven Beyer, Olivo, R., Ricardo Olivo, Tarek Ali, Müller, F., Ali, T., Hoffmann, R., Dünkel, S., Gerlach, G., Franz Muller, Stefan Muller, Lederer, M., Gerald Gerlach, Seidel, K., Beyer, S., Raik Hoffmann, Konrad Seidel, Stefan Dunkel, Müller, J., Maximilian Lederer, Mulaosmanovic, H.   +23 more
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Evaluation of Bulk and SOI FeFET Architecture for Non-Volatile Memory Applications

IEEE Journal of the Electron Devices Society, 2019
The stress induced by the capping electrode is critical to stabilizing the ferroelectric phase in Si-doped HfO2 which is being actively explored for embedded non-volatile memory applications. While TiN is commonly used as the electrode of choice owing to
Antik Mallick, Nikhil Shukla
doaj   +1 more source