Results 11 to 20 of about 267 (149)

Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications

Nanoscale Research Letters, 2019
We report a novel nanocrystal-embedded-insulator (NEI) ferroelectric field-effect transistor (FeFET) with very thin unified-ferroelectric/dielectric (FE/DE) insulating layer, which is promising for low-voltage logic and non-volatile memory (NVM ...
Yue Peng, Genquan Han, Wenwu Xiao, Jibao Wu, Yan Liu, Jincheng Zhang, Yue Hao   +6 more
doaj   +2 more sources

Ge N‐Channel Ferroelectric FET Memory With Al2O3/AlN Interfacial Layer by Microwave Annealing

Advanced Electronic Materials
While n‐FeFET memory devices have shown promising characteristics for data storage and neuromorphic computing, implementing such devices with a Ge channel, which is expected to be adopted in advanced technology nodes, has never been reported due to the ...
Sheng‐Yen Zheng, Wei‐Ning Kao, Yu‐Hsing Chen, Yung‐Hsien Wu   +3 more
doaj   +2 more sources

Enhancement of Ion-Sensitive Field-Effect Transistors through Sol-Gel Processed Lead Zirconate Titanate Ferroelectric Film Integration and Coplanar Gate Sensing Paradigm

Chemosensors
To facilitate the utility of field effect transistor (FET)-type sensors, achieving sensitivity enhancement beyond the Nernst limit is crucial. Thus, this study proposed a novel approach for the development of ferroelectric FETs (FeFETs) using lead ...
Dong-Gyun Mah, Seong-Moo Oh, Jongwan Jung, Won-Ju Cho   +3 more
doaj   +2 more sources

Ferroelectric 2D SnS₂ Analog Synaptic FET. [PDF]

Adv Sci (Weinh)
In this study, the development and characterization of 2D ferroelectric field‐effect transistor (2D FeFET) devices are presented, utilizing nanoscale ferroelectric HfZrO2 (HZO) and 2D semiconductors.
Song CM, Kim D, Lee S, Kwon HJ.
europepmc   +2 more sources

Novel ferroelectric FET based synapse for neuromorphic systems

, 2022
S.134-135A compact nanoscale device emulating the functionality of biological synapses is an essential element for neuromorphic systems. Here we present for the first time a synapse based on a single ferroelectric FET (FeFET) integrated in a 28nm HKMG ...
Müller, S., Mikolajick, T., Polakowski, P., Müller, J., Slesazeck, S., Ocker, J., Noack, M., Mulaosmanovic, H.   +7 more
core   +1 more source

Embedding security into ferroelectric FET array via in situ memory operation. [PDF]

Nat Commun, 2023
Non-volatile memories (NVMs) have the potential to reshape next-generation memory systems because of their promising properties of near-zero leakage power consumption, high density and non-volatility.
Xu Y, Xiao Y, Zhao Z, Müller F, Vardar A, Gong X, George S, Kämpfe T, Narayanan V, Ni K.   +9 more
europepmc   +3 more sources

Multi-Level Operation of Ferroelectric FET Memory Arrays for Compute-In-Memory Applications

, 2023
149152We report on the multi-level-cell (MLC) operation of AND-connected ferroelectric FET (FeFET) arrays and their suitability for Compute-in-Memory (CiM) applications.
Müller, Johannes, Ali, Tarek, Revello Olivo, Ricardo Orlando, Beyer, Sven, Dünkel, Stefan, Mulaosmanovic, Halid, Gerlach, Gerald, Müller, Franz, De, Sourav, Kämpfe, Thomas, Lederer, Maximilian, Hoffmann, Raik, Seidel, Konrad   +12 more
core   +1 more source

Ultralow‐Power Compact Artificial Synapse Based on a Ferroelectric Fin Field‐Effect Transistor for Spatiotemporal Information Processing

Advanced Intelligent Systems, 2023
Artificial synapses are key elements in building bioinspired, neuromorphic computing systems. Ferroelectric field‐effect transistors (FeFETs) with excellent controllability and complementary metal oxide semiconductor (CMOS) compatibility are favorable to
Zhaohao Zhang, Guohui Zhan, Weizhuo Gan, Yan Cheng, Xumeng Zhang, Yue Peng, Jianshi Tang, Fan Zhang, Jiali Huo, Gaobo Xu, Qingzhu Zhang, Zhenhua Wu, Yan Liu, Hangbing Lv, Qi Liu, Genquan Han, Huaxiang Yin, Jun Luo, Wenwu Wang   +18 more
doaj   +1 more source

A Study on the Temperature-Dependent Operation of Fluorite-Structure-Based Ferroelectric HfO2 Memory FeFET: A Temperature-Modulated Operation

, 2022
S.2793-2799We report on the temperature-dependent operation of fluorite-structure-based ferroelectric FET (FeFET) emerging memory. A temperature range (-40 °C to 40 °C) is used to explore the FeFET characteristic relation to operating temperature.
Mart, C., Metzger, J., Steinke, P., Eng, L.M., Pätzold, B., Kämpfe, T., Olivo, R., Czernohorsky, M., Ali, T., Müller, F., Hoffmann, R., Lederer, M., Lehninger, D., Seidel, K., Rudolph, M., Müller, J., Kühnel, K., Binder, R.   +17 more
core   +1 more source

A Study on the Temperature-Dependent Operation of Fluorite-Structure-Based Ferroelectric HfO2 Memory FeFET: Pyroelectricity and Reliability

, 2022
S.2981-2987We report on the high-temperature operation and reliability of the Si-doped hafnium oxide (HSO) ferroelectric FET (FeFET) emerging memory. In this study, we explore the role of high-temperature operation of the ferroelectric (FE) material on ...
Mart, C., Metzger, J., Steinke, P., Eng, L.M., Pätzold, B., Kämpfe, T., Olivo, R., Czernohorsky, M., Ali, T., Müller, F., Hoffmann, R., Lederer, M., Lehninger, D., Seidel, K., Rudolph, M., Müller, J., Kühnel, K., Binder, R.   +17 more
core   +1 more source