Results 11 to 20 of about 156,693 (147)

Efficient Erase Operation by GIDL Current for 3D Structure FeFETs With Gate Stack Engineering and Compact Long-Term Retention Model

IEEE Journal of the Electron Devices Society, 2022
We have fabricated junctionless N-type silicon-on-insulator (SOI) ferroelectric-HfO2 field effect transistors (FeFETs) with overlap and underlap structures between gate and drain/source regions to investigate the role of gate-induced-drain-leakage (GIDL)
Fei Mo, Jiawen Xiang, Xiaoran Mei, Yoshiki Sawabe, Takuya Saraya, Toshiro Hiramoto, Chun-Jung Su, Vita Pi-Ho Hu, Masaharu Kobayashi   +8 more
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Powering Disturb-Free Reconfigurable Computing and Tunable Analog Electronics with Dual-Port Ferroelectric FET [PDF]

, 2023
Single-port ferroelectric FET (FeFET) that performs write and read operations on the same electrical gate prevents its wide application in tunable analog electronics and suffers from read disturb, especially to the high-threshold voltage (VTH) state as ...
Amrouch, Hussam, Chauhan, Yogesh Singh, Kleimaier, Dominik, Mohamed, Mohamed, Beyer, Sven, Xu, Yixin, Mulaosmanovic, Halid, Chatterjee, Swetaki, Ni, Kai, Joshi, Rajiv, Zhao, Zijian, Xiao, Yi, Duenkel, Stefan, Deng, Shan, Jiang, Zhouhang, Islam, Muhammad Shaffatul, Narayanan, Vijaykrishnan, Meninger, Scott   +17 more
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Novel ferroelectric FET based synapse for neuromorphic systems

, 2022
S.134-135A compact nanoscale device emulating the functionality of biological synapses is an essential element for neuromorphic systems. Here we present for the first time a synapse based on a single ferroelectric FET (FeFET) integrated in a 28nm HKMG ...
Müller, S., Mikolajick, T., Polakowski, P., Müller, J., Slesazeck, S., Ocker, J., Noack, M., Mulaosmanovic, H.   +7 more
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High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty

, 2022
S.3769-3774We report the integration of a ferroelectric (FE) silicon-doped hafnium oxide material in ferroelectric field-effect transistor (FeFET) devices fabricated with an optimized interfacial layer in a gate-first scheme. The effect of increasing the
Büttner, T., Polakowski, P., Steinke, P., Zimmermann, K., Kämpfe, T., Pätzold, B., Czernohorsky, M., Ali, T., Hoffmann, R., Riedel, S., Seidel, K., Rudolph, M., Calvo, J., Löhr, D., Müller, J., Kühnel, K.   +15 more
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Ultralow‐Power Compact Artificial Synapse Based on a Ferroelectric Fin Field‐Effect Transistor for Spatiotemporal Information Processing

Advanced Intelligent Systems, 2023
Artificial synapses are key elements in building bioinspired, neuromorphic computing systems. Ferroelectric field‐effect transistors (FeFETs) with excellent controllability and complementary metal oxide semiconductor (CMOS) compatibility are favorable to
Zhaohao Zhang, Guohui Zhan, Weizhuo Gan, Yan Cheng, Xumeng Zhang, Yue Peng, Jianshi Tang, Fan Zhang, Jiali Huo, Gaobo Xu, Qingzhu Zhang, Zhenhua Wu, Yan Liu, Hangbing Lv, Qi Liu, Genquan Han, Huaxiang Yin, Jun Luo, Wenwu Wang   +18 more
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Multi-Level Operation of Ferroelectric FET Memory Arrays for Compute-In-Memory Applications

, 2023
149152We report on the multi-level-cell (MLC) operation of AND-connected ferroelectric FET (FeFET) arrays and their suitability for Compute-in-Memory (CiM) applications.
Müller, Johannes, Ali, Tarek, Revello Olivo, Ricardo Orlando, Beyer, Sven, Dünkel, Stefan, Mulaosmanovic, Halid, Gerlach, Gerald, Müller, Franz, De, Sourav, Kämpfe, Thomas, Lederer, Maximilian, Hoffmann, Raik, Seidel, Konrad   +12 more
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A Study on the Temperature-Dependent Operation of Fluorite-Structure-Based Ferroelectric HfO2 Memory FeFET: A Temperature-Modulated Operation

, 2022
S.2793-2799We report on the temperature-dependent operation of fluorite-structure-based ferroelectric FET (FeFET) emerging memory. A temperature range (-40 °C to 40 °C) is used to explore the FeFET characteristic relation to operating temperature.
Mart, C., Metzger, J., Steinke, P., Eng, L.M., Pätzold, B., Kämpfe, T., Olivo, R., Czernohorsky, M., Ali, T., Müller, F., Hoffmann, R., Lederer, M., Lehninger, D., Seidel, K., Rudolph, M., Müller, J., Kühnel, K., Binder, R.   +17 more
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On the Physical Mechanism of Transient Negative Capacitance Effect in Deep Subthreshold Region

IEEE Journal of the Electron Devices Society, 2019
We have investigated the physical mechanism of steep subthreshold slope (SS) in ferroelectric FET (FeFET) based on a dynamic ferroelectric (FE) model without traversing the negative capacitance (NC) region of the S-shaped polarization-voltage predicted ...
Chengji Jin, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi   +3 more
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Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications

Nanoscale Research Letters, 2019
We report a novel nanocrystal-embedded-insulator (NEI) ferroelectric field-effect transistor (FeFET) with very thin unified-ferroelectric/dielectric (FE/DE) insulating layer, which is promising for low-voltage logic and non-volatile memory (NVM ...
Yue Peng, Genquan Han, Wenwu Xiao, Jibao Wu, Yan Liu, Jincheng Zhang, Yue Hao   +6 more
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From MFM capacitors toward ferroelectric transistors: Endurance and disturb characteristics of HfO2-based FeFET devices

, 2022
S.4199-4205Ferroelectric Si: HfO2 has been investigated starting from metal-ferroelectric-metal (MFM) capacitors over metal-ferroelectric-insulator-semiconductor (MFIS) and finally ferroelectric field-effect-transistor (FeFET) devices.
Hoffmann, R., Schlösser, T., Mikolajick, T., Yurchuk, E., Zaka, A., Mueller, S., Boschke, R., Paul, J., Goldbach, M., Müller, J., Herrmann, T., Schröder, U.   +11 more
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