International audienceHafnium oxide-based ferroelectric field-effect transistors (FeFETs) are redefining non-volatile memory (NVM) by enabling low-power,high-speed, and compatibility with advanced complementary metal–oxide–semiconductor nodes. Exploiting
De, Sourav +4 more
core +1 more source
Endurance Paradox in Hafnium-Oxide-Based Silicon-Channel Ferroelectric Transistors. [PDF]
Das A +14 more
europepmc +1 more source
Enabling Radiation Hardness in Solid-State NAND Storage Utilizing a Laminated Ferroelectric Stack. [PDF]
Fernandes L +20 more
europepmc +1 more source
Recent progress in HfO<sub>2</sub>-based ferroelectric devices with oxide semiconductor channels: a comprehensive review. [PDF]
Kang HY +4 more
europepmc +1 more source
High-throughput design of optoelectronic-ferroelectric heterostructure from materials to sensor-memory-computing devices. [PDF]
Zhong G +9 more
europepmc +1 more source
Advancing the Frontiers of HfO<sub>2</sub>-Based Ferroelectric Memories: Innovative Concepts from Materials to Applications. [PDF]
Zhou Z +9 more
europepmc +1 more source
Ferroelectrics Hybrids: Harnessing Multifunctionality of 2D Semiconductors in the Post-Moore Era. [PDF]
Qiu H, Qian X, Qian D, Samorì P.
europepmc +1 more source
Homogeneous integration of two-dimensional material-based optoelectronic neurons and ferroelectric synapses for neuromorphic vision. [PDF]
Wang J +14 more
europepmc +1 more source
Recent Advances and Perspectives on Field-Effect Transistors for Artificial Visual Neuromorphic Systems. [PDF]
Yaqian L +11 more
europepmc +1 more source

