Results 131 to 140 of about 723 (223)

Hafnium oxide-based ferroelectric field effect transistors: From materials and reliability to applications in storage-class memory and in-memory computing

open access: yes
International audienceHafnium oxide-based ferroelectric field-effect transistors (FeFETs) are redefining non-volatile memory (NVM) by enabling low-power,high-speed, and compatibility with advanced complementary metal–oxide–semiconductor nodes. Exploiting
De, Sourav   +4 more
core   +1 more source

Endurance Paradox in Hafnium-Oxide-Based Silicon-Channel Ferroelectric Transistors. [PDF]

open access: yesACS Appl Mater Interfaces
Das A   +14 more
europepmc   +1 more source

Enabling Radiation Hardness in Solid-State NAND Storage Utilizing a Laminated Ferroelectric Stack. [PDF]

open access: yesNano Lett
Fernandes L   +20 more
europepmc   +1 more source

-FeFETs

open access: yes, 2020
Martin Trentzsch   +8 more
core   +1 more source

Homogeneous integration of two-dimensional material-based optoelectronic neurons and ferroelectric synapses for neuromorphic vision. [PDF]

open access: yesNat Commun
Wang J   +14 more
europepmc   +1 more source

Recent Advances and Perspectives on Field-Effect Transistors for Artificial Visual Neuromorphic Systems. [PDF]

open access: yesAdv Sci (Weinh)
Yaqian L   +11 more
europepmc   +1 more source

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