Results 131 to 140 of about 889 (227)

Nanogate ferroelectric transistors with ultralow operation voltage of 0.6 V. [PDF]

Sci Adv
Meng D, Ma X, Shen Z, Xu L, Peng LM, Qiu C.   +5 more
europepmc   +1 more source

Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and Computing. [PDF]

ACS Nano
Das A, Senapati A, Kumar G, Lou ZF, Müller J, Maskeen JS, Chang YT, Tewari M, Agarwal A, Paul A, Raffel Y, Maikap S, Kao KH, Agarwal T, Lashkare S, Lu D, Larrieu G, Lee MH, De S.   +18 more
europepmc   +1 more source

TiO₂ nanolayer-assisted top-interface engineering for disturbance-free FeFETs: a blueprint for future van der Waals memory. [PDF]

Nano Converg
Kang H, Kwak J, Kim G, Lee S, Kim Y, Park S, Lim S, Seo K, Kim W, Ha D, Ahn J, Jeon S.   +11 more
europepmc   +1 more source

Thermally Stable HfO₂-Based Ferroelectric Transistors for CMOS-Compatible Energy-Efficient Neuromorphic Integrated Circuits. [PDF]

Nanomaterials (Basel)
Tikhonenko FV, Tarkov M, Popov VP, Miakonkikh AV, Rudenko KV.   +4 more
europepmc   +1 more source

Tailored Polarization with an Invariant Coercive Field in Al_0.7Sc_0.3N Thin Films via Deposition Pressure Engineering. [PDF]

ACS Omega
Lee TY, Lee SH, Cho JW, An C, Chae SC.
europepmc   +1 more source

Towards Artificial Intelligence Hardware With 3D Integrated Ferroelectric Transistors. [PDF]

Small
Seok H, Kim G, Son S, Choi H, Kim T.
europepmc   +1 more source

Endurance Paradox in Hafnium-Oxide-Based Silicon-Channel Ferroelectric Transistors. [PDF]

ACS Appl Mater Interfaces
Das A, Paul A, Tewari M, Lou ZF, Chang YT, Senapati A, Kumar G, Raffel Y, Useinov A, Tumilty N, Wu TL, Lashkare S, Agarwal T, Lee MH, De S.   +14 more
europepmc   +1 more source

Enabling Radiation Hardness in Solid-State NAND Storage Utilizing a Laminated Ferroelectric Stack. [PDF]

Nano Lett
Fernandes L, Wodzro S, Venkatesan P, Ravikumar P, Lee MY, Shon M, Chakraborty D, Song T, Kang S, Soliman S, Tian M, Yeager J, Adler J, Chen J, Wang Z, Wolfe D, Yu S, Padovani A, Datta S, Ray B, Khan A.   +20 more
europepmc   +1 more source

Recent progress in HfO₂-based ferroelectric devices with oxide semiconductor channels: a comprehensive review. [PDF]

Nanoscale Adv
Kang HY, Shin YH, Kim DE, Kwon DW, Jeong JK.   +4 more
europepmc   +1 more source

-FeFETs

, 2020
Martin Trentzsch, Thomas Mikolajick, Stefan Muller, Sven Beyer, Haidi Zhou, Marko Noack, Stefan Dunkel, Johannes Ocker, Menno Mennenga   +8 more
core   +1 more source