Results 111 to 120 of about 723 (223)
, 2019 Two-dimensional material-based ferroelectric field-effect transistors (2D-FeFETs) hold great promise in information storage and processing. However, an often-observed and hard-to-control anti-hysteresis response of 2D-FeFETs, for example, hysteretic ...
Kenji Watanabe (75040) +10 more
core +1 more source
Trapping Dynamics and Endurance in HfO2-FeFETs: An Insight from Charge Pumping
20142017We investigate endurance degradation in hafnium oxide (HfO₂)-based ferroelectric field effect transistors (FeFETs) by analyzing interface (Nit) and near-interface oxide traps (Nox) using a two-level charge pumping (CP) technique.
Raffel, Yannick +11 more
core +1 more source
, 2019 Electron backscatter diffraction (EBSD) was applied to investigate the grain size and orientation of polycrystalline CaxSr1–xBi2Ta2O9 (CxS1–xBT) films in ferroelectric-gate field-effect transistors (FeFETs). The CxS1–xBT FeFETs with x =
Wei Zhang +2 more
core +1 more source
Cross-Temperature FeFETs Enabling Long- and Short-Term Memory for Reservoir Computing Network
IEEE Journal of the Electron Devices SocietyHardware neural networks based on emerging nonvolatile memory are promising candidates to overcome the Von Neumann computing bottleneck. This study investigates the device characteristics and reliability of ferroelectric field-effect transistors (FeFETs)
Bo Chen +8 more
doaj +1 more source
, 2023 Advanced data-intensive computing models that go beyond conventional von-Neumann architectures require memory technologies that can offer high-density and low-power capabilities, exceeding the performance of current flash memory.
Tasneem, Nujhat
core
Memory-Efficient Spiking Neural Networks Using MLC FeFETs and Mixed Quantization
This paper proposes a memory-efficient approach for Spiking Neural Networks (SNNs) using mixed quantization and Multi-Level Cell (MLC) FeFETs in in-memory computing (IMC) architectures.
Müller, Franz +5 more
core +1 more source
, 2018 We report the fabrication of 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-0.29PT)-based ferroelectric field effect transistors (FeFETs) by the epitaxial growth of cobalt-doped tin dioxide (SnO2) semiconductor thin films on PMN-0.29PT single crystals.
Si-Ning Dong +25 more
core +1 more source
Performance Evaluation and Improvement of Ferroelectric Field-Effect Transistor Memory [PDF]
, 2015 Flash memory is reaching scaling limitations rapidly due to reduction of charge in floating gates, charge leakage and capacitive coupling between cells which cause threshold voltage fluctuations, short retention times, and interference.
Yu, Hyung Suk
core
Accumulative Polarization Reversal in Nanoscale Ferroelectric Transistors
, 2018 The electric-field-driven and reversible polarization switching in ferroelectric materials provides a promising approach for nonvolatile information storage.
Thomas Mikolajick +5 more
core +1 more source
Variability Analysis of Ferroelectric FinFETs for Embedded Non-Volatile Memory Applications
IEEE AccessIn this study, we conduct a comparative analysis of the process variation induced variability – specifically the random ferroelectric/dielectric phase variation, the metal work function variation, and the line edge roughness – in various ...
Byeongju Ha +3 more
doaj +1 more source