Results 111 to 120 of about 889 (227)

Unveiling Time-Dependent Dynamics in MFMIS FeFETs

IEEE Journal of the Electron Devices Society
Metal–ferroelectric–metal–insulator–semiconductor (MFMIS) ferroelectric field-effect transistors (FeFETs) using an amorphous indium–tin–zinc-oxide (a-ITZO) channel and Hf ${}_{\mathbf {0.5}}$ Zr ${}_{\mathbf {0.5}
Simin Chen, Taewon Jin, Xinkai Sun, Gijun Ju, Zewei Wang, Jaehoon Han, Younghyun Kim   +6 more
doaj   +1 more source

Enhanced memory characteristics in organic ferroelectric field-effect transistors through thermal annealing

AIP Advances, 2015
We report on the memory characteristics of organic ferroelectric field-effect transistors (FeFETs) using spin-coated poly(vinylidene difluoride/trifluoroethylene) (P(VDF/TrFE)) as a gate insulating layer.
Ryo Sugano, Tomoya Tashiro, Tomohito Sekine, Kenjiro Fukuda, Daisuke Kumaki, Shizuo Tokito   +5 more
doaj   +1 more source

Multi-Level FeFET-Based CAM Address Decoder

2024 IFIP/IEEE 32nd International Conference on Very Large Scale Integration (VLSI-SoC)
Address decoders are an integral part of random access memories. They are typically implemented using fast logic optimised for low latency. The latter, however, are difficult to test, while their repair is considered to be impossible. In this work we propose a highly scalable and testable address decoder solution, based on Content-Addressable Memories ...
Thomas Makryniotis, Georgi Gaydadjiev, Said Hamdioui, Mottaqiallah Taouil   +3 more
openaire   +3 more sources

FEOL Monolithic Co-Integration of FeFET and CMOS on 8-Inch Wafer Using Laser Spike Annealing With Implementation of an FeFET Inverter

IEEE Access
Ferroelectric devices and monolithic three-dimensional integration technology (M3D) with good CMOS process compatibility have emerged as promising solutions to scaling issue at the device and system levels, respectively.
Bohyeon Kang, Jehyun An, Jongseo Park, Giryun Hong, Beomjoo Ham, Jaeseong Pyo, Sung-Min Ahn, Rock-Hyun Baek   +7 more
doaj   +1 more source

Neuromorphic Hardware Materials for Intelligent Artificial Perception and Multimodal Fusion: From Sensing to Cognition

Interdisciplinary Materials, Volume 5, Issue 5, Page 699-727, September 2026.
Neuromorphic hardware enables the integration of sensing, memory, and computing for intelligent artificial perception. Recent advances in multimodal fusion further highlight its potential for embodied intelligence and next‐generation human–machine interfaces.
Yixin Zhu, Yuqing Hu, Changjin Wan, Qing Wan   +3 more
wiley   +1 more source

Unlocking Ferroelectricity in Hafnia: From Phase Origins to Device Integration

Interdisciplinary Materials, Volume 5, Issue 5, Page 749-771, September 2026.
This review provides a systematic overview of the critical factors for inducing ferroelectricity in hafnia‐based systems, covering multiple dimensions such as physical origin mechanisms, materials research, integration strategies, and emerging application areas.
Jiangzhen Niu, Xichen Tang, Wenhui Shi, Yunrui Xiu, Huimin Mao, Ye Tao, Xiaoning Zhao, Ya Lin, Zhongqiang Wang, Haiyang Xu, Yichun Liu   +10 more
wiley   +1 more source

Experimental Analysis and Mathematical Modeling of Program Efficiency in Gate-Side Injection Type FeFETs Depending on the Gate Interlayer

We experimentally analyze the incremental step pulse programming (ISPP) characteristics of gate-side injection type MIFIS FeFETs, which feature a metal - gate interlayer (G.IL) - ferroelectrics - channel interlayer (Ch.IL) - Si stack, with a focus on the
Shin, Seokjoong, Kim, Hoon, Kim, Giuk, Kim, Wanki, Kim, Kwangsoo, Seo, Kwangyou, Ha, Daewon, Kim, Taeho, Park, Sanghyun, Jeon, Sanghun, Choi, Hyojun, Ahn, Jinho   +11 more
core   +1 more source

Carrier Mobility Enhancement in Two‐Dimensional Semiconductor

Interdisciplinary Materials, Volume 5, Issue 5, Page 796-833, September 2026.
In this review, we comprehensively describe recent progress in carrier mobility enhancement strategies for 2D semiconductor‐based field‐effect transistors considering the role of intrinsic defects, electrode contact interfaces, dielectric engineering, and lattice strain engineering.
Huchanghui Zuo, Yuehao Li, Xiangkai Liu, Chao Tan, Guohua Hu, Mingdong Dong, Zegao Wang   +6 more
wiley   +1 more source

A visible‐to‐infrared miniaturized indium selenide spectrometer enabled by a gate‐tunable spectral response matrix

InfoScience, Volume 3, Issue 3, September 2026.
Traditional light‐analyzing tools, known as spectrometers, are typically too bulky and expensive to fit into portable electronics like smartphones or wearables. In this study, we developed a microscopic, high‐performance spectrometer using a material called Indium Selenide combined with smart algorithms to accurately analyze light from the visible to ...
Jing Chen, Zhen‐Hua Wang, Zheng Zhang, Hengji Li, Xiao‐Ming Wu, Tian‐Ling Ren, Hong Liu, Min Jin, Lin Han   +8 more
wiley   +1 more source

Impact of High-K Deposition Process on the Noise Immunity of FeFETs and their Applicability Towards In-Memory-Computing

This article reports the impact of the high-k material deposition process on the low-frequency noise and reliability of hafnium oxide-based (HfO2) ferroelectric field-effect transistors (FeFET).
Raffel, Yannick, De, Sourav, Lehninger, David, Heitmann, J., Kämpfe, Thomas, Parmar, Vivek, Lederer, Maximilian, Chohan, Talha, Pirro, Luca, Seidel, Konrad, Suri, Manan M.K., Olivo, Ricardo Revello   +11 more
core   +1 more source