Results 71 to 80 of about 723 (223)

Endurance improvements and defect characterization in ferroelectric FETs through interface fluorination

, 2022
3841HfO2-based ferroelectric FETs (FeFETs) offer excellent retention, scalability, and memory window. However, achieving high endurance is still challenging.
Raffel, Yannick, Revello Olivo, Ricardo Orlando, Eng, L.M., Ali, Tarek Nadi Ismail, Drescher, M., Müller, Franz, Pirro, L., Heitmann, J., Beyer, S., Kämpfe, Thomas, Lederer, Maximilian, Hoffmann, Raik, Seidel, Konrad, Mertens, K.   +13 more
core   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

Advanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song, Chenxi Yu, Shangze Li, Dijiang Sun, Jiajia Zhang, Haotong Zhu, Xiaomin Xiao, Xionghao Qin, Xiaoyan Liu, Xing Zhang, Jinfeng Kang   +10 more
wiley   +1 more source

Tuning Polarity in WSe₂/AlScN FeFETs via Contact Engineering

Recent advancements in ferroelectric field-effect transistors (FeFETs) using two-dimensional (2D) semiconductor channels and ferroelectric Al0.68Sc0.32N (AlScN) allow high-performance nonvolatile devices with exceptional ON-state currents, large ON/OFF ...
Eric A. Stach (1269663), Roy H. Olsson III (17847997), Kwan-Ho Kim (10681129), Pariasadat Musavigharavi (10681135), Jeffrey Zheng (6810503), Deep Jariwala (1298532), Nicholas Trainor (9993549), Shalini Kumari (6288929), Seunguk Song (6744305), Keshava Katti (10681132), Joan M. Redwing (1323504), Bumho Kim (6817343), Chen Chen (6544)   +12 more
core   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

Advanced Electronic Materials, EarlyView.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon‐Lours   +7 more
wiley   +1 more source

Data processing capability of polarization dynamics in ferroelectric-gate transistor-based physical reservoir computing

Applied Physics Express
We investigated the relationship between the polarization characteristics of ferroelectric Hf _0.5 Zr _0.5 O _2 thin-films and data processing capability in physical reservoir computing.
Yu Ukezeki, Sota Inoue, Norifumi Fujimura, Tokuji Yokomatsu, Kensuke Kanda, Kazusuke Maenaka, Kasidit Toprasertpong, Shinichi Takagi, Takeshi Yoshimura   +8 more
doaj   +1 more source

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

Advanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar, Li Zhang, Alexander Rehmer, Marc Lupp, Subhashree Baskaran, Osama Abdelaal, Franz Müller, Nandakishor Yadav, Bing Li, Thomas Kämpfe   +9 more
wiley   +1 more source

A Dual‐Memory Ferroelectric Transistor Emulating Synaptic Metaplasticity for High‐Speed Reservoir Computing

Advanced Electronic Materials, EarlyView.
A CMOS‐compatible ferroelectric transistor harnesses the interplay between stable gate polarization memory and volatile non‐quasi‐static channel charge dynamics to emulate how biological synapses regulate their own plasticity. This brain‐inspired dual‐memory mechanism, realized in a single device, enables a physical reservoir computer that solves ...
Yifan Wang, Muhammad Sakib Shahriar, Salma Soliman, Noah Vaillancourt, Lance Fernandes, Andrea Padovani, Asif Islam Khan, Md Sakib Hasan, Raisul Islam   +8 more
wiley   +1 more source

Analog Content-Addressable Memory from Complementary FeFETs

, 2023
To address the increasing computational demands of artificial intelligence (AI) and big data, compute-in-memory (CIM) integrates memory and processing units into the same physical location, reducing the time and energy overhead of the system.
Jacob, Paul, Kurinec, Santosh, Schroeder, Uwe, Chaudhari, Pratik, Liu, Xiwen, Jariwala, Deep, Richter, Claudia, Katti, Keshava, He, Yunfei   +8 more
core  

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source