Results 71 to 80 of about 889 (227)

Ferroelectric Field Effect Transistors–Based Content‐Addressable Storage‐Class Memory: A Study on the Impact of Device Variation and High‐Temperature Compatibility

Advanced Intelligent Systems
Hafnium oxide (HfO2)‐based ferroelectric field effect transistors (FeFETs) revolutionize the emerging nonvolatile memory area, especially with the potential to replace flash memories for several applications.
Athira Sunil, Masud Rana SK, Maximilian Lederer, Yannick Raffel, Franz Müller, Ricardo Olivo, Raik Hoffmann, Konrad Seidel, Thomas Kämpfe, Bhaswar Chakrabarti, Sourav De   +10 more
doaj   +1 more source

Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurements

Nanoscale Research Letters, 2019
The HfO2-based ferroelectric field effect transistor (FeFET) with a metal/ferroelectric/insulator/semiconductor (MFIS) gate stack is currently being considered as a possible candidate for high-density and fast write speed non-volatile memory.
Wenwu Xiao, Chen Liu, Yue Peng, Shuaizhi Zheng, Qian Feng, Chunfu Zhang, Jincheng Zhang, Yue Hao, Min Liao, Yichun Zhou   +9 more
doaj   +1 more source

Crystallized Domain Walls in HfO2 Enable Chessboard‐Type Ultra‐High‐Dense Ferroelectric Memory

Advanced Science, EarlyView.
In general, DWs in ferroelectrics stabilize within a widely spread transition region between two oppositely polarized domains, which severely limits the achievable memory density. Here, the reported DWs in HfO2 constitute perfect crystalline structures along arbitrary crystallographic directions, enabling the formation of the narrowest square‐shaped ...
Pawan Kumar, Hyun‐Jae Lee, Yungyeom Kim, Jihoon Choi, Jun Hee Lee   +4 more
wiley   +1 more source

Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories

Advanced Materials Interfaces
The discovery of ferroelectricity in HfO2 offering the advantage of nonvolatile polarization switching creates a renewed interest in the semiconductor memory industry.
Eunjin Kim, Jiyong Woo
doaj   +1 more source

Embedding hafnium oxide based FeFETs in the memory landscape

2018 International Conference on IC Design & Technology (ICICDT), 2018
During the last decade ferroelectrics based on doped hafnium oxide emerged as promising candidates for realization of ultra-low-power non-volatile memories. Two spontaneous polarization states occurring in the material that can be altered by applying electrical fields rather than forcing a current through and the materials compatibility to CMOS ...
Stefan Slesazeck, Uwe Schroeder, Thomas Mikolajick   +2 more
openaire   +3 more sources

Tuning Polarity in WSe₂/AlScN FeFETs via Contact Engineering

Recent advancements in ferroelectric field-effect transistors (FeFETs) using two-dimensional (2D) semiconductor channels and ferroelectric Al0.68Sc0.32N (AlScN) allow high-performance nonvolatile devices with exceptional ON-state currents, large ON/OFF ...
Eric A. Stach (1269663), Roy H. Olsson III (17847997), Kwan-Ho Kim (10681129), Pariasadat Musavigharavi (10681135), Jeffrey Zheng (6810503), Deep Jariwala (1298532), Nicholas Trainor (9993549), Shalini Kumari (6288929), Seunguk Song (6744305), Keshava Katti (10681132), Joan M. Redwing (1323504), Bumho Kim (6817343), Chen Chen (6544)   +12 more
core   +1 more source

Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP₂S₆ and InZnO

, 2023
In this paper, we demonstrate low-thermal-budget ferroelectric field-effect transistors (FeFETs) based on the two-dimensional ferroelectric CuInP2S6 (CIPS) and oxide semiconductor InZnO (IZO).
Kyusang Lee (2573419), Wenjuan Zhu (417072), Junzhe Kang (10283248), Minseong Park (15181426), Hojoon Ryu (9607472), Byungjoon Bae (17372835), Shaloo Rakheja (11596799), Zijing Zhao (9607469)   +7 more
core   +1 more source

Modeling of FEOL and BEOL Amorphous Gallium Oxide-Based Ferroelectric FETs With a Metal Interlayer for Multilevel Operation in Short Channel Devices

IEEE Journal of the Electron Devices Society
Ferroelectric field effect transistors (FeFETs) are among the most promising candidates for the implementation of artificial synapses for neuromorphic computing.
Chiara Rossi, Daniel Lizzit, Charlotte van Dijck, Thanh Luan Phan, Catherine Dubourdieu, David Esseni   +5 more
doaj   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

Advanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song, Chenxi Yu, Shangze Li, Dijiang Sun, Jiajia Zhang, Haotong Zhu, Xiaomin Xiao, Xionghao Qin, Xiaoyan Liu, Xing Zhang, Jinfeng Kang   +10 more
wiley   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source