Results 41 to 50 of about 553 (192)
Substrate-voltage-controlled temporal nonlinearity in ferroelectric FET-based reservoir computing [PDF]
APL Machine LearningPhysical reservoir computing exploits inherent nonlinearity and short-term memory of physical dynamics to achieve efficient processing of time-series data with extremely-low training cost.
Eishin Nako +4 more
doaj +1 more source
Ferroelectric field effect transistors: Progress and perspective
APL Materials, 2021 Ferroelectric field effect transistors (FeFETs) have attracted attention as next-generation devices as they can serve as a synaptic device for neuromorphic implementation and a one-transistor (1T) for achieving high integration.
Jae Young Kim, Min-Ju Choi, Ho Won Jang
doaj +1 more source
Nanoscale Research Letters, 2019 The HfO2-based ferroelectric field effect transistor (FeFET) with a metal/ferroelectric/insulator/semiconductor (MFIS) gate stack is currently being considered as a possible candidate for high-density and fast write speed non-volatile memory.
Wenwu Xiao +9 more
doaj +1 more source
A Comparative Study of n- and p-Channel FeFETs with Ferroelectric HZO Gate Dielectric
Solids, 2023 This study investigates the electrical characteristics observed in n-channel and p-channel ferroelectric field effect transistor (FeFET) devices fabricated through a similar process flow with 10 nm of ferroelectric hafnium zirconium oxide (HZO) as the ...
Paul Jacob +8 more
doaj +1 more source
Oxide Heteroepitaxy-Based Flexible Ferroelectric Transistor
, 2019 With the rise of Internet of Things, the presence of flexible devices has attracted significant attention owing to design flexibility. A ferroelectric field-effect transistor (FeFET), showing the advantages of high speed, nondestructive readout, and low ...
Din-Ping Tsai +17 more
core +1 more source
Advanced Functional Materials, EarlyView.A fully transparent, all‐metal‐oxide neuromorphic transistor using a sodium‐embedded alumina (SEA) electrolyte is demonstrated. By precisely tuning the thermal annealing process, the chemical composition of the SEA layer is controlled, allowing for the deterministic realization of both short‐term and long‐term synaptic plasticity within the same device
Yonghyun Albert Kwon +7 more
wiley +1 more source
Ferroelectric Field Effect Transistors Based on PZT and IGZO
IEEE Journal of the Electron Devices Society, 2019 Ferroelectric field effect transistors (FeFETs) based on lead zirconate titanate (PZT) ferroelectric material and amorphous-indium-gallium-zinc oxide (a-IGZO) were developed and characterized.
Cristina Besleaga +7 more
doaj +1 more source
Advanced Materials, EarlyView.The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj +8 more
wiley +1 more source
Scalable Complementary FeFET CAM Design
, 2023 CAMs are frequently employed for data-centric applications. They offer excellent parallelism. Traditionally, they were implemented using the area-consuming SRAM. Recent advancements suggest using compact nonvolatile memories (NVMs) to create CAM cells to
Kanj, R. +5 more
core +1 more source
Advanced Materials, EarlyView.This study presents a compact dynamic‐field‐driven nucleation and growth (DFNG) model that captures ferroelectric switching behavior under arbitrary voltage waveforms. It enables extraction of time‐dependent domain wall velocity and growth dimensionality, which can then be extended to device‐level modeling.
Yi Liang +10 more
wiley +1 more source