Results 41 to 50 of about 15,744,307 (196)

Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurements

Nanoscale Research Letters, 2019
The HfO2-based ferroelectric field effect transistor (FeFET) with a metal/ferroelectric/insulator/semiconductor (MFIS) gate stack is currently being considered as a possible candidate for high-density and fast write speed non-volatile memory.
Wenwu Xiao, Chen Liu, Yue Peng, Shuaizhi Zheng, Qian Feng, Chunfu Zhang, Jincheng Zhang, Yue Hao, Min Liao, Yichun Zhou   +9 more
doaj   +1 more source

A Comparative Study of n- and p-Channel FeFETs with Ferroelectric HZO Gate Dielectric

Solids, 2023
This study investigates the electrical characteristics observed in n-channel and p-channel ferroelectric field effect transistor (FeFET) devices fabricated through a similar process flow with 10 nm of ferroelectric hafnium zirconium oxide (HZO) as the ...
Paul Jacob, Pooja C. Patil, Shan Deng, Kai Ni, Khushwant Sehra, Mridula Gupta, Manoj Saxena, David MacMahon, Santosh Kurinec   +8 more
doaj   +1 more source

Performance investigation and optimization of Si:HfO2 FeFETs on a 28 nm bulk technology

, 2022
S.248-251The film thickness dependence of ferroelectric Si:HfO2 (10 nm and 30 nm) was studied with a focus on ferroelectric field effect transistor (FeFET) memory applications based on a 28 nm bulk technology.
Mikolajick, T., Yurchuk, E., Zaka, A., Mueller, S., Slesazeck, S., Müller, J., Herrmann, T.   +6 more
core   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

1F-1T Array: Current Limiting Transistor Cascoded FeFET Memory Array for Variation Tolerant Vector-Matrix Multiplication Operation

, 2023
424429This letter proposes a memory cell, denoted by 1F-1 T, consisting of a ferroelectric field-effect transistor (FeFET) cascaded with another current-limiting transistor (T).
Laleni, Nelli, Raffel, Yannick, Luca Pirro, Tian-Li Wu, Chohan, Talha, Yannick Raffel, Franz Müller, Müller, Franz, Chakrabarti, Bhaswar, De, Sourav, Sourav De, Kämpfe, Thomas, Lederer, Maximilian, Pirro, Luca, Jing-Hua Hsuen, Bhaswar Chakrabarti, Maximilian Lederer, Masud Rana Sk, Hsuen, Jing Hua, Talha Chohan, Thomas Kämpfe, Thunder, Sunanda, Nellie Laleni, Sunanda Thunder, Seidel, Konrad, Konrad Seidel, Wu, Tian Li, Sk, Masud Rana   +27 more
core   +1 more source

Ferroelectric Field Effect Transistors Based on PZT and IGZO

IEEE Journal of the Electron Devices Society, 2019
Ferroelectric field effect transistors (FeFETs) based on lead zirconate titanate (PZT) ferroelectric material and amorphous-indium-gallium-zinc oxide (a-IGZO) were developed and characterized.
Cristina Besleaga, Roxana Radu, Liliana-Marinela Balescu, Viorica Stancu, Andreea Costas, Viorel Dumitru, George Stan, Lucian Pintilie   +7 more
doaj   +1 more source

Demonstration of Differential Mode Ferroelectric Field‐Effect Transistor Array‐Based in‐Memory Computing Macro for Realizing Multiprecision Mixed‐Signal Artificial Intelligence Accelerator

Advanced Intelligent Systems, 2023
Harnessing multibit precision in nonvolatile memory (NVM)‐based synaptic core can accelerate multiply and accumulate (MAC) operation of deep neural network (DNN).
Vivek Parmar, Franz Müller, Jing-Hua Hsuen, Sandeep Kaur Kingra, Nellie Laleni, Yannick Raffel, Maximilian Lederer, Alptekin Vardar, Konrad Seidel, Taha Soliman, Tobias Kirchner, Tarek Ali, Stefan Dünkel, Sven Beyer, Tian-Li Wu, Sourav De, Manan Suri, Thomas Kämpfe   +17 more
doaj   +1 more source

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

Advanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan, Hocheon Yoo, Benoît H. Lessard, Ioannis Kymissis, Chang‐Hyun Kim   +4 more
wiley   +1 more source

Enhanced Ferroelectric Phase Formation via Local Structure Modification in the Pre‐Crystalline State of Hafnium Zirconium Oxide Thin Films

Advanced Functional Materials, EarlyView.
Hafnium zirconium oxide thin films are grown using plasma‐enhanced atomic layer deposition with the addition of an atomic layer annealing (ALA) step. ALA leads to a change in the short‐range structure of the deposit and encourages formation of the ferroelectric Pca21 phase. The result is wake‐up‐free performance with films exposed to ALA.
Nicolas K. Lam, Gerald R. Bejger, Waseem A. Wani, Kristina M. Holsgrove, Andrew N. Titus, Niyorjyoti Sharma, Shihao Wang, Keithen Orson, Megan K. Lenox, Liron Shvilberg, Yong Kyu Choi, Ian A. Brummel, Benjamin L. Aronson, Petra Reinke, Quentin Ramasse, Amit Kumar, Brian J. Rodriguez, Christina M. Rost, Jon F. Ihlefeld   +18 more
wiley   +1 more source

A Bit-Cell Failure Analysis Framework for Ferroelectric Field-Effect Transistor-Based Memories

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
The ferroelectric field-effect transistor (FeFET) is a promising memory device technology due to desirable attributes, such as fast access times, high memory cell density, good endurance, compatibility with CMOS process, and impressive scalability. While
Jianze Wang, Wei Zhang, Xuanyao Fong
doaj   +1 more source