Results 51 to 60 of about 15,744,307 (196)
Advanced Materials, EarlyView.The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj +8 more
wiley +1 more source
Oxide Heteroepitaxy-Based Flexible Ferroelectric Transistor
, 2019 With the rise of Internet of Things, the presence of flexible devices has attracted significant attention owing to design flexibility. A ferroelectric field-effect transistor (FeFET), showing the advantages of high speed, nondestructive readout, and low ...
Din-Ping Tsai +17 more
core +1 more source
Field-effect experiments on oxide superconductors thin films [PDF]
, 2006 [ITALIANO] Negli ultimi anni la ricerca nell’ambito della fisica dello stato solido ha rivolto grande interesse allo studio delle proprietà dei sistemi fortemente correlati ed in particolare degli ossidi perovskitici dei metalli di transizione.
Prigiobbo, Antonio
core +1 more source
Direct Growth of 2D Bilayers on Au(111) for Low‐Coercive Sliding Ferroelectricity
Advanced Materials, EarlyView.Controlled CVD growth of stacking‐defined bilayer ReS2 on Au(111) enables parallel‐stacked bilayers with intrinsic sliding ferroelectricity, a strong piezoelectric response, and an ultralow coercive voltage. Atomic‐resolution imaging and in situ measurements further reveal the decisive role of clean interfaces in achieving low‐barrier ferroelectric ...
Honglin Chen +7 more
wiley +1 more source
Impact of Work-Function Variation in Ferroelectric Field-Effect Transistor
IEEE Journal of the Electron Devices SocietyWe analyzed the impact of work-function variation (WFV) in ferroelectric field-effect transistor (FeFET). To analyze the operation characteristics, we employed the technology computer-aided design (TCAD) simulations. After evaluating ferroelectricity (FE)
Su Yeon Jung +3 more
doaj +1 more source
Implementing Boolean Logic in Ferroelectric Field‐Effect Transistors
Advanced Electronic Materials, 2023 A method of using non‐volatile and fast ferroelectric field‐effect transistor (FeFET) devices to realize Boolean logic is proposed. First, the internal states are initialized.
Yung‐Fang Tan +8 more
doaj +1 more source
High-Performance and Area-Efficient Ferroelectric FET-Based Nonvolatile Flip-Flops
IEEE Access, 2021 Recently, nonvolatile systems with nonvolatile flip-flops (NVFFs) have gained prominence for their energy efficiency in energy-harvesting devices and battery-operated Internet of Things applications. They are normally-off instantly-on, and thus, can save
Sekeon Kim +4 more
doaj +1 more source
Disturb‐Resilient and Wake‐up‐Free 2T‐MFMFET Array for Storage and Computing Applications
Advanced Materials Technologies, EarlyView.A disturb‐resilient and wake‐up‐free 2T‐MFMFET array fabricated using a FeRAM‐compatible process demonstrates excellent uniformity, a large memory window, and 3‐bit multi‐level‐cell storage capability. A newly proposed hybrid in‐memory computing scheme further enables accurate multiply–accumulate operations with minimal refresh overhead, highlighting ...
Chen‐Yi Cho +6 more
wiley +1 more source
Ferroelectric Field-Effect Transistor Differential Amplifier Circuit Analysis [PDF]
, 2008 There has been considerable research investigating the Ferroelectric Field-Effect Transistor (FeFET) in memory circuits. However, very little research has been performed in applying the FeFET to analog circuits.
Phillips, Thomas A. +2 more
core
Characteristics of sub-100nm Ferroelectric Field Effect Transistor with High-k Buffer Layer
, 2008 The simulation work is carried out using two dimension device simulator to investigate the characteristics of sub-100nm ferroelectric field effect transistor (FeFET) with high-k material as the buffer layer.
Kang, Jinfeng +13 more
core +1 more source