Results 51 to 60 of about 553 (192)
A Bit-Cell Failure Analysis Framework for Ferroelectric Field-Effect Transistor-Based Memories
IEEE Journal on Exploratory Solid-State Computational Devices and CircuitsThe ferroelectric field-effect transistor (FeFET) is a promising memory device technology due to desirable attributes, such as fast access times, high memory cell density, good endurance, compatibility with CMOS process, and impressive scalability. While
Jianze Wang, Wei Zhang, Xuanyao Fong
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Characteristics of sub-100nm Ferroelectric Field Effect Transistor with High-k Buffer Layer
, 2008 The simulation work is carried out using two dimension device simulator to investigate the characteristics of sub-100nm ferroelectric field effect transistor (FeFET) with high-k material as the buffer layer.
Kang, Jinfeng +13 more
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Ferroelectric Devices for In‐Memory and In‐Sensor Computing
Advanced Science, EarlyView.Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang +5 more
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Impact of Work-Function Variation in Ferroelectric Field-Effect Transistor
IEEE Journal of the Electron Devices SocietyWe analyzed the impact of work-function variation (WFV) in ferroelectric field-effect transistor (FeFET). To analyze the operation characteristics, we employed the technology computer-aided design (TCAD) simulations. After evaluating ferroelectricity (FE)
Su Yeon Jung +3 more
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Sustainable Synaptic Device with Two‐Dimensional Ferroelectric Materials for Neuromorphic Computing
Advanced Science, EarlyView.α‐In2Se3 based FeSFETs can be utilized as sustainable devices through polarization switching governed by both out‐of‐plane and in‐plane polarizations. Upon reaching a fatigued state, current annealing enabled by conductance modulation can significantly enhance the endurance of FeSFETs.
Jaewook Yoo +12 more
wiley +1 more source
High-Performance and Area-Efficient Ferroelectric FET-Based Nonvolatile Flip-Flops
IEEE Access, 2021 Recently, nonvolatile systems with nonvolatile flip-flops (NVFFs) have gained prominence for their energy efficiency in energy-harvesting devices and battery-operated Internet of Things applications. They are normally-off instantly-on, and thus, can save
Sekeon Kim +4 more
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Advanced Science, EarlyView.A reconfigurable physical unclonable function is developed using CMOS‐integrated SOT‐MRAM chips, leveraging a dual‐pulse strategy and offering enhanced environmental robustness. A temperature‐compensation effect arising from the CMOS transistor and SOT‐MTJ is revealed and established as a key prerequisite for thermal resilience.
Min Wang +7 more
wiley +1 more source
, 2022 This paper presents a comprehensive overview of 28 nm high-k-metal gate-based ferroelectric field effect transistor devices for synaptic applications. The device under test was fabricated on 300mm wafers at GlobalFoundries.
Yannick Raffel (12758051) +9 more
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Advanced Science, EarlyView.Bi2O2Se/Bi2O5Se bilayer heterostructure exhibits reversible structural evolution during device operation, directly revealed by atomic‐scale investigation. Oxygen vacancy redistribution governs filament formation and rupture, enabling stable multilevel resistive switching and synaptic‐like behaviors.
Yen‐Jung Chen +8 more
wiley +1 more source
Advanced Physics Research, 2023 Modern microelectronic systems and applications demand an every increasing amount of non‐volatile memories that are fast, reliable, and consume little power.
David Lehninger +10 more
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