Results 1 to 10 of about 3,154,535 (299)

High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles [PDF]

Nanomaterials, 2021
Non-volatile memory (NVM) devices based on three-terminal thin-film transistors (TFTs) have gained extensive interest in memory applications due to their high retained characteristics, good scalability, and high charge storage capacity. Herein, we report
Muhammad Naqi, Nayoung Kwon, Sung Hyeon Jung, Pavan Pujar, Hae Won Cho, Yong In Cho, Hyung Koun Cho, Byungkwon Lim, Sunkook Kim   +8 more
doaj   +4 more sources

The Effect of Nitrogen Annealing on the Resistive Switching Characteristics of the W/TiO₂/FTO Memory Device [PDF]

Sensors, 2023
In this paper, the effect of nitrogen annealing on the resistive switching characteristics of the rutile TiO2 nanowire-based W/TiO2/FTO memory device is analyzed.
Zhiqiang Yu, Xu Han, Jiamin Xu, Cheng Chen, Xinru Qu, Baosheng Liu, Zijun Sun, Tangyou Sun   +7 more
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In silico screening for As/Se-free ovonic threshold switching materials

npj Computational Materials, 2023
Restricted use of hazardous environmental chemicals is one important challenge that the semiconductor industry needs to face to improve its sustainability.
Sergiu Clima, Daisuke Matsubayashi, Taras Ravsher, Daniele Garbin, Romain Delhougne, Gouri Sankar Kar, Geoffrey Pourtois   +6 more
doaj   +1 more source

Development of Conjugated Polymers for Memory Device Applications [PDF]

Polymers, 2017
Changsheng Shan, Ping Xu, Hung-Ju Yen
exaly   +2 more sources

Laser induced spin injection to [GeTe/Sb2Te3] superlattice through a TbFeCo film

AIP Advances, 2022
A [GeTe/Sb2Te3] superlattice is known as a topological insulator and it shows magnetic responses such as magneto-optical effect although it does not contain any magnetic element.
Satoshi Sumi, Hiroyuki Awano, Junji Tominaga   +2 more
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A Facile Hydrothermal Synthesis and Resistive Switching Behavior of α-Fe₂O₃ Nanowire Arrays

Molecules, 2023
A facile hydrothermal process has been developed to synthesize the α-Fe2O3 nanowire arrays with a preferential growth orientation along the [110] direction.
Zhiqiang Yu, Jiamin Xu, Baosheng Liu, Zijun Sun, Qingnan Huang, Meilian Ou, Qingcheng Wang, Jinhao Jia, Wenbo Kang, Qingquan Xiao, Tinghong Gao, Quan Xie   +11 more
doaj   +1 more source

In-Situ Surface Modification of ITO Substrate via Bio-Inspired Mussel Chemistry for Organic Memory Devices

Biomimetics, 2022
The development of organic memory devices, regarding factors such as structure construction, principle exploration, and material design, has become a powerful supplement to traditional silicon-based information storage. The in-situ growth of materials on
Minglei Gong, Wei Li, Fei Fan, Yu Chen, Bin Zhang   +4 more
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High‐performance P(VDF‐TrFE)/BaTiO3 nanocomposite based ferroelectric field effect transistor (FeFET) for memory and switching applications

Nano Select, 2021
The ferroelectric field effect transistor (FeFET) using Poly (vinylidene fluoride‐trifluoroethylene)/Barium titanate [P(VDF‐TrFE)/BaTiO3] polymer nanocomposite as dielectric layer, has been fabricated and characterized.
Uvais Valiyaneerilakkal, Subash Cherumannil Karumuthil, Kulwant Singh, Loksani Bhanuprakash, Rama Komaragiri, Soney Varghese   +5 more
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Devices with Tuneable Resistance Switching Characteristics Based on a Multilayer Structure of Graphene Oxide and Egg Albumen

Nanomaterials, 2020
We used graphene oxide (GO) and egg albumen (EA) to fabricate bipolar resistance switching devices with indium tin oxide (ITO)/GO/EA/GO/Aluminum (Al) and ITO/EA/Al structures.
Lu Wang, Jinyi Wang, Dianzhong Wen
doaj   +1 more source

PEROVSKITES AND OTHER FRAMEWORK STRUCTURE CRYSTALLINE MATERIALS (BOOK' FIRST PAGES AND PREFACE)

Materials and Devices, 2021
Perovskites are among the most famous materials due to their exceptional properties: they present nearly all existing types of interesting properties, in particular as ferroics or multiferroics, they may be insulators, (super)conductors, or ...
Saint-Grégoire P., Smirnov M.
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