Results 21 to 30 of about 3,154,535 (299)

Linking working memory and long-term memory: A computational model of the learning of new words [PDF]

, 2007
The nonword repetition (NWR) test has been shown to be a good predictor of children’s vocabulary size. NWR performance has been explained using phonological working memory, which is seen as a critical component in the learning of new words.
Julian M. Pine, Pine, J M, Fernand Gobet, Gary Jones, Jones, G, Gobet, F   +5 more
core   +1 more source

Efficient spin current source using a half-Heusler alloy topological semimetal with back end of line compatibility

Scientific Reports, 2022
Topological materials, such as topological insulators (TIs), have great potential for ultralow power spintronic devices, thanks to their giant spin Hall effect. However, the giant spin Hall angle (θ SH > 1) is limited to a few chalcogenide TIs with toxic
Takanori Shirokura, Tuo Fan, Nguyen Huynh Duy Khang, Tsuyoshi Kondo, Pham Nam Hai   +4 more
doaj   +1 more source

Physically Transient, Flexible, and Resistive Random Access Memory Based on Silver Ions and Egg Albumen Composites

Nanomaterials, 2022
Organic-resistance random access memory has high application potential in the field of next-generation green nonvolatile memory. Because of their biocompatibility and environmental friendliness, natural biomaterials are suitable for the fabrication of ...
Lu Wang, Yukai Zhang, Peng Zhang, Dianzhong Wen   +3 more
doaj   +1 more source

Design and scalability of a memory array utilizing anchor-free nanoelectromechanical nonvolatile memory device

, 2012
This letter explains a nanoelectromechanical (NEM) nonvolatile memory (NVM) architecture employing an anchor-free electrode (shuttle) structure. The proposed NEM device utilizes adhesion forces to achieve bistable mechanical states for nonvolatile data ...
Vaddi, Ramesh, Kim, Tony Tae-Hyoung, Chua, Geng Li, Pott, Vincent, Lin, Julius Tsai Ming   +4 more
core   +1 more source

A SPICE Model of Phase Change Memory for Neuromorphic Circuits

IEEE Access, 2020
A phase change memory (PCM) model suitable for neuromorphic circuit simulations is developed. A crystallization ratio module is used to track the memory state in the SET process, and an active region radius module is developed to track the continuously ...
Xuhui Chen, Huifang Hu, Xiaoqing Huang, Weiran Cai, Ming Liu, Chung Lam, Xinnan Lin, Lining Zhang, Mansun Chan   +8 more
doaj   +1 more source

Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications

Micromachines, 2021
Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-
Young Jin Choi, Jihyun Kim, Min Je Kim, Hwa Sook Ryu, Han Young Woo, Jeong Ho Cho, Joohoon Kang   +6 more
doaj   +1 more source

A new nonvolatile bistable polymer-nanoparticle memory device

, 2014
In this letter, we demonstrate a new organic bistable nonvolatile memory device that is adopting polymer-chain-stabilized gold (Au) nanoparticles in a host polymer as a memory active layer.
Fan, J.F., Hwang, G.W., 裴靜偉, Lin, H.T., Chen, J.R., Chan, Y.J., Pei, Z.W.   +6 more
core   +1 more source

High performance shape memory polyurethane synthesized with high molecular weight polyol as the soft segment [PDF]

, 2012
Shape memory polyurethanes (SMPUs) are typically synthesized using polyols of low molecular weight (MW~2,000 g/mol) as it is believed that the high density of cross-links in these low molecular weight polyols are essential for high mechanical strength ...
Miraftab, Mohsen, Huang, Weimin, Mohsen Miraftab, Fu, Richard, Manzoor Ahmad, Weimin Huang, Yongqing Fu, Bin Xu, Fu, Yongqing, Ahmad, Manzoor, Luo, Jikui, Xu, Bin, Hendra Purnawali, Purnawali, Hendra, Huang, Wei Min, Jikui Luo   +15 more
core   +1 more source

IGZO 2T1C DRAM With Low Operation Voltage and High Current Window

IEEE Journal of the Electron Devices Society
In this work, we propose and experimentally demonstrate a novel IGZO 2T1C cell. Novel bit-cell applies read-word-line to the capacitor terminal and utilize the coupling effect of the capacitor to achieve storage node (SN) voltage modulation.
Wendong Lu, Kaifei Chen, Menggan Liu, Fuxi Liao, Zijing Wu, Naide Mao, Zihan Li, Xuanming Zhang, Congyan Lu, Jiebin Niu, Bok-Moon Kang, Jing-Hong Shi, Xie-Shuai Wu, Gui-Lei Wang, Zhengyong Zhu, Jiawei Wang, Lingfei Wang, Di Geng, Nianduan Lu, Guanhua Yang, Chao Zhao, Ling Li   +21 more
doaj   +1 more source

IGZO 2T0C DRAM With V_TH Compensation Technique for Multi-Bit Applications

IEEE Journal of the Electron Devices Society
In this work, we proposed and experimentally demonstrated the novel dual-gate (DG) indium-gallium-zinc oxide (IGZO) two-transistor-zero-capacitance (2T0C) dynamic random-access memory (DRAM) for array-level multi-bit storage. Unlike traditional 2T0C DRAM,
Kaifei Chen, Wendong Lu, Jiebin Niu, Menggan Liu, Fuxi Liao, Xuanming Zhang, Zihan Li, Naide Mao, Kaiping Zhang, Congyan Lu, Bok-Moon Kang, Jiawei Wang, Di Geng, Nianduan Lu, Guilei Wang, Zhengyong Zhu, Guanhua Yang, Chao Zhao, Arokia Nathan, Ling Li, Ming Liu   +20 more
doaj   +1 more source