Results 11 to 20 of about 3,154,535 (299)
Molecular electronics device modeling for system design. [PDF]
, 2007 We have used the Breit-Wigner resonance formula to model a class of molecular electronics devices with the aim to establish an abstract model for a molecular electronic device that can be used in a general cross bar architecture of future nanoelectronic ...
Bailey, Stephen +3 more
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Resistive Switching Characteristics of ZnO-Based RRAM on Silicon Substrate
Metals, 2021 In this work, we conducted the following analysis of Ni/ZnO (20 nm)/n-type Si RRAM device with three different compliance currents (CCs). We compared I–V curves, including set, reset voltages, and resistance of LRS, HRS states for each CCs.
Dahye Kim, Jiwoong Shin, Sungjun Kim
doaj +1 more source
Improved Performance of NbOx Resistive Switching Memory by In-Situ N Doping
Nanomaterials, 2022 Valence change memory (VCM) attracts numerous attention in memory applications, due to its high stability and low energy consumption. However, owing to the low on/off ratio of VCM, increasing the difficulty of information identification hinders the ...
Jing Xu +7 more
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Origin of High Mobility in InSnZnO MOSFETs
IEEE Journal of the Electron Devices Society, 2018 The origins of higher mobility characteristics of In-Sn-Zn-O (InSnZnO) MOSFETs than those of conventional In-Ga-Zn-O (InGaZnO) MOSFETs were investigated. Comprehensive analyses of temperature and surface carrier concentration ( ${N} _{s}$ ) dependence of
Nobuyoshi Saito +3 more
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AIP Advances, 2020 As the conventional hydrogen-termination method has a limited ability to improve the interface quality between SiO2 and its Si substrate, an alternative termination method to reduce the influence of interface states is necessary.
Takamitsu Ishihara +4 more
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Short-term memory as a working memory control process [PDF]
, 2013 Aben et al. (2012) take issue with the unthoughtful use of the terms “working memory” (WM) and “short-term memory” (STM) in the cognitive and neuroscientific literature.
Eddy J Davelaar +2 more
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Measurement-Device-Independent Verification of a Quantum Memory
, 2021 In this paper we report an experiment that verifies an atomic-ensemble quantum memory via a measurement-device-independent scheme. A single photon generated via Rydberg blockade in one atomic ensemble is stored in another atomic ensemble via ...
Yu-Zhe Zhang (2519452) +9 more
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Circuit Optimization Method to Reduce Disturbances in Poly-Si 1T-DRAM
Micromachines, 2021 A capacitorless one-transistor dynamic random-access memory device (1T-DRAM) is proposed to resolve the scaling problem in conventional one-transistor one-capacitor random-access memory (1T-1C-DRAM).
Yejin Ha +3 more
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High-Performance Silicon Nanowire Electronics [PDF]
, 2012 This thesis explores 10-nm wide Si nanowire (SiNW) field-effect transistors (FETs) for logic applications via the fabrication and testing of SiNW-based ring oscillators.
Huang, Ruo-Gu
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A Wirelessly Controlled Shape-Memory Alloy-Based Bistable Metal Swimming Device
, 2022 Shape memory Nitinol has long been used for actuation. However, utilizing Nitinol to fabricate novel devices for various applications is a challenge, but has shown incredible promise and impacts.
Wan, Yu, Cuff, Keith, Serpe, Michael J.
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