Results 61 to 70 of about 15,744,307 (196)

The ferroelectric field-effect transistor with negative capacitance

, 2022
International audienceIntegrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny.
Luk'Yanchuk, I, Razumnaya, A., Tikhonov, Y., Sene, Anaïs, Vinokur, V. M.   +4 more
core   +1 more source

High-performance solution-processed polymer ferroelectric field-effect transistors [PDF]

, 2005
We demonstrate a rewritable, non-volatile memory device with flexible plastic active layers deposited from solution. The memory device is a ferroelectric field-effect transistor (FeFET) made with a ferroelectric fluoropolymer and a bisalkoxy-substituted ...
Tanase, C, Marsman, AW, De Leeuw, DM, Gelinck, Gerwin H., Gelinck, GH, Touwslager, Fred J., Blom, PWM, Naber, Ronald C.G., Touwslager, FJ, Setayesh, S, Naber, RCG, Marsman, Albert W.   +11 more
core   +3 more sources

Ferroelectric [HfO2/ZrO2] Superlattices with Enhanced Polarization, Tailored Coercive Field, and Improved High Temperature Reliability

Advanced Physics Research, 2023
Modern microelectronic systems and applications demand an every increasing amount of non‐volatile memories that are fast, reliable, and consume little power.
David Lehninger, Aditya Prabhu, Ayse Sünbül, Tarek Ali, Fred Schöne, Thomas Kämpfe, Kati Biedermann, Lisa Roy, Konrad Seidel, Maximilian Lederer, Lukas M. Eng   +10 more
doaj   +1 more source

Design of Ferroelectric Field-Effect Transistor (FeFET)-Based Computing-in-Memory Architecture with Energy-Efficient and Low Latency for Edge AI Computing

Electronics
The von Neumann architecture faces severe bottlenecks in energy efficiency. Computing-in-Memory (CiM) addresses this by performing computations within memory arrays, yet analog CiM solutions suffer from precision loss and high overhead from analog-to-digital converters and digital-to-analog converters (ADCs/DACs).
Chengyu He, Wei Li, Jianjun Li, Qiquan Li, Zhiang Xie, Tao Du   +5 more
openaire   +1 more source

Polarization Dynamics in Ferroelectrics: Insights Enabled by Machine Learning Molecular Dynamics

Advanced Science, EarlyView.
Machine learning molecular dynamics is presented as a route to capture polarization switching, domain wall kinetics, topological polar textures, and polar mechanical coupling beyond the limits of conventional atomistic methods. This Perspective surveys recent progress and identifies key methodological directions, including long‐range electrostatics ...
Dongyu Bai, Ri He, Junxian Liu, Liangzhi Kou   +3 more
wiley   +1 more source

Channel Mobility and Inversion Carrier Density in MFIS FEFET: Deep Insights Into Device Physics for Non-Volatile Memory Applications

IEEE Journal of the Electron Devices Society
Ferroelectric polarization charge in doped-HfO2 such as HfZrOx (HZO) has a high surface density (~1014 cm-2) compared to the channel carrier (~1013 cm-2), thereby, ferroelectric polarization induces high electric field near the channel ...
Song-Hyeon Kuk, Kyul Ko, Bong Ho Kim, Joon Pyo Kim, Jae-Hoon Han, Sang-Hyeon Kim   +5 more
doaj   +1 more source

Wake‐Up and Fatigue under Electrical Cycling in HfO2‐Based Ferroelectrics: Mechanisms and Strategies toward Reliable Devices

Advanced Science, EarlyView.
HfO2‐based ferroelectrics exhibit wake‐up and fatigue behaviors during electrical cycling, significantly affecting device endurance and reliability. These phenomena are governed by defect dynamics, including oxygen vacancy redistribution and charge trapping.
Hongseok Kim, Shinhyeong Lee, Hyojun Choi, Minseung Park, Hyunah Cho, Min Hyuk Park, Yunseok Kim   +6 more
wiley   +1 more source

Crystallized Domain Walls in HfO2 Enable Chessboard‐Type Ultra‐High‐Dense Ferroelectric Memory

Advanced Science, EarlyView.
In general, DWs in ferroelectrics stabilize within a widely spread transition region between two oppositely polarized domains, which severely limits the achievable memory density. Here, the reported DWs in HfO2 constitute perfect crystalline structures along arbitrary crystallographic directions, enabling the formation of the narrowest square‐shaped ...
Pawan Kumar, Hyun‐Jae Lee, Yungyeom Kim, Jihoon Choi, Jun Hee Lee   +4 more
wiley   +1 more source

First demonstration of in-memory computing crossbar using multi-level Cell FeFET

Nature Communications, 2023
Advancements in AI led to the emergence of in-memory-computing architectures as a promising solution for the associated computing and memory challenges.
Taha Soliman, Swetaki Chatterjee, Nellie Laleni, Franz Müller, Tobias Kirchner, Norbert Wehn, Thomas Kämpfe, Yogesh Singh Chauhan, Hussam Amrouch   +8 more
doaj   +1 more source

Mechanisms of Temperature‐Dependent Hysteresis in Freestanding BaTiO3/MoS2 Heterostructures

Advanced Science, EarlyView.
Freestanding ferroelectric BaTiO3 membranes are combined with monolayer MoS2 into 2D field‐effect transistors. At room temperature they provide ultrahigh‐κ gating with steep subthreshold swing and minimal hysteresis. Upon cooling, strong ferroelectric switching produces two stable memory states with long retention times.
Thomas Pucher, Federico Mompeán, Víctor Rouco, Carlos León, Jacobo Santamaría, Carmen Munuera, Mar García‐Hernández, Andres Castellanos‐Gomez   +7 more
wiley   +1 more source