Results 61 to 70 of about 553 (192)

Correlation between the macroscopic ferroelectric material properties of Si:HfO2 and the statistics of 28nm FeFET memory arrays

, 2022
S.42-51With the discovery of ferroelectric hafnium oxide (FE-HfO2), the ferroelectric field effect transistor (FeFET), a long-term contender for non-volatile data storage, has finally managed to scale to the 2x nm technology node. Here for the first time,
Flachowsky, S., Mikolajick, T., Polakowski, P., Mueller, S., Paul, J., Slesazeck, S., Müller, J., Henker, S., Smith, E.   +8 more
core   +1 more source

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

Advanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

Channel Mobility and Inversion Carrier Density in MFIS FEFET: Deep Insights Into Device Physics for Non-Volatile Memory Applications

IEEE Journal of the Electron Devices Society
Ferroelectric polarization charge in doped-HfO2 such as HfZrOx (HZO) has a high surface density (~1014 cm-2) compared to the channel carrier (~1013 cm-2), thereby, ferroelectric polarization induces high electric field near the channel ...
Song-Hyeon Kuk, Kyul Ko, Bong Ho Kim, Joon Pyo Kim, Jae-Hoon Han, Sang-Hyeon Kim   +5 more
doaj   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

Advanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song, Chenxi Yu, Shangze Li, Dijiang Sun, Jiajia Zhang, Haotong Zhu, Xiaomin Xiao, Xionghao Qin, Xiaoyan Liu, Xing Zhang, Jinfeng Kang   +10 more
wiley   +1 more source

Design of Ferroelectric Field-Effect Transistor (FeFET)-Based Computing-in-Memory Architecture with Energy-Efficient and Low Latency for Edge AI Computing

Electronics
The von Neumann architecture faces severe bottlenecks in energy efficiency. Computing-in-Memory (CiM) addresses this by performing computations within memory arrays, yet analog CiM solutions suffer from precision loss and high overhead from analog-to-digital converters and digital-to-analog converters (ADCs/DACs).
Chengyu He, Wei Li, Jianjun Li, Qiquan Li, Zhiang Xie, Tao Du   +5 more
openaire   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

First demonstration of in-memory computing crossbar using multi-level Cell FeFET

Nature Communications, 2023
Advancements in AI led to the emergence of in-memory-computing architectures as a promising solution for the associated computing and memory challenges.
Taha Soliman, Swetaki Chatterjee, Nellie Laleni, Franz Müller, Tobias Kirchner, Norbert Wehn, Thomas Kämpfe, Yogesh Singh Chauhan, Hussam Amrouch   +8 more
doaj   +1 more source

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

Advanced Electronic Materials, EarlyView.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon‐Lours   +7 more
wiley   +1 more source

NSIP: Neural Network SPICE Integration Platform for Ferroelectric Field‐Effect Transistor‐Based Crossbar Arrays

Advanced Intelligent Systems
This article presents the world's first demonstration of a neural network SPICE integration platform (NSIP) for simulating synaptic weights in HfZrO (HZO)‐based ferroelectric field‐effect transistor (FeFET) crossbar arrays tailored for neuromorphic ...
Juhwan Park, Huijun Kim, Hyunbo Cho, Jongwook Jeon   +3 more
doaj   +1 more source