Results 71 to 80 of about 553 (192)

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

Advanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar, Li Zhang, Alexander Rehmer, Marc Lupp, Subhashree Baskaran, Osama Abdelaal, Franz Müller, Nandakishor Yadav, Bing Li, Thomas Kämpfe   +9 more
wiley   +1 more source

A Dual‐Memory Ferroelectric Transistor Emulating Synaptic Metaplasticity for High‐Speed Reservoir Computing

Advanced Electronic Materials, EarlyView.
A CMOS‐compatible ferroelectric transistor harnesses the interplay between stable gate polarization memory and volatile non‐quasi‐static channel charge dynamics to emulate how biological synapses regulate their own plasticity. This brain‐inspired dual‐memory mechanism, realized in a single device, enables a physical reservoir computer that solves ...
Yifan Wang, Muhammad Sakib Shahriar, Salma Soliman, Noah Vaillancourt, Lance Fernandes, Andrea Padovani, Asif Islam Khan, Md Sakib Hasan, Raisul Islam   +8 more
wiley   +1 more source

Structural and Electrical Comparison of Si and Zr Doped Hafnium Oxide Thin Films and Integrated FeFETs Utilizing Transmission Kikuchi Diffraction

Nanomaterials, 2020
The microstructure of ferroelectric hafnium oxide plays a vital role for its application, e.g., non-volatile memories. In this study, transmission Kikuchi diffraction and scanning transmission electron microscopy STEM techniques are used to compare the ...
Maximilian Lederer, Thomas Kämpfe, Norman Vogel, Dirk Utess, Beate Volkmann, Tarek Ali, Ricardo Olivo, Johannes Müller, Sven Beyer, Martin Trentzsch, Konrad Seidel, Lukas M. Eng   +11 more
doaj   +1 more source

A Multifunctional Flexible Ferroelectric Transistor Sensor for Electronic Skin

Advanced Materials Interfaces, 2021
Electronic skin (E‐skin) is a device that mimics the functions of human skin and is attracting more and more attention as a novel platform for human–machine interaction, health diagnostics, therapeutics, robotics, prosthesis, and monitoring.
Weilin Liu, Dong Lin, Wanyu Zeng, Qinhao Wang, Jiang Yang, Zengchong Peng, Qun Zhang, Guodong Zhu   +7 more
doaj   +1 more source

Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications.

, 2014
We successfully fabricated ferroelectric-gate field effect transistor (FEFET)-based nonvolatile memory devices using an n-type Si nanowire coated with omega-shaped-gate organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) via a low ...
Kang, DJ, Van, NH, Kim, JM, Whang, D, Lee, J-H, Lee, JH, Cha, S, Sohn, JI, ,   +8 more
core   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond

, 2022
S.485-488We show the implementation of a ferroelectric field effect transistor (FeFET) based eNVM solution into a leading edge 22nm FDSOI CMOS technology.
Müller, S., Löhr, D.-A., Polakowski, P., Majer, M., Richter, R., Dünkel, S., Gehring, O., Mikolajick, T., Beyer, S., Moll, P., Wittek, S., Müller, B., Melde, T., Fuchs, C., Höntschel, J., Pellerin, J., Rice, B., Slesazeck, S., Müller, J., Ocker, J., Noack, M., Trentzsch, M., Mulaosmanovic, H.   +22 more
core   +1 more source

Logic Functionality and Circuit Design of In2Se3‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

Advanced Electronic Materials, EarlyView.
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram, Cédric Marchand, Shehr Bano Masood, Aymen Mahmoudi, Takashi Taniguchi, Kenji Watanabe, Bernard Doudin, Abdelkarim Ouerghi, Ian O'Connor, Alexei Gruverman, Jean‐François Dayen   +10 more
wiley   +1 more source

Design and Simulation of Short Channel Si:HfO2 Ferroelectric Field Effect Transistor (FeFET)

, 2014
Non-volatile memories using ferroelectric capacitors, known as Ferroelectric Random Access Memory (FRAM) have been studied for many years, but they suffer from loss of data during read out process.
Smaili, Idris H
core