Results 91 to 100 of about 553 (192)

Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights

, 2020
Neuromorphic computing architectures enable the dense colocation of memory and processing elements within a single circuit. This colocation removes the communication bottleneck of transferring data between separate memory and computing units as in ...
Stefan Abel, Valeria Bragaglia (1794460), Mattia Halter (8654316), Bert Jan Offrein (8654322), Mathieu Luisier (1394380), Valeria Bragaglia, Bert Jan Offrein, Mattia Halter, Mathieu Luisier, Jean Fompeyrine, Laura Bégon-Lours, Marilyne Sousa, Marilyne Sousa (2508925), Stefan Abel (7525100), Laura Bégon-Lours (8654319), Jean Fompeyrine (7525097)   +15 more
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Two‐Dimensional Layered Oxides and the Two‐Dimensionalization of Bulk Oxides for Post‐Moore Information Devices

Information &Functional Materials, EarlyView.
This review systematically summarizes two‐dimensional layered and nonlayered oxides, focusing on their synthesis, properties, and post‐Moore applications in transistors, gate dielectrics, optoelectronics, and ferroelectric/magnetic devices. It also discusses challenges including scalable growth and interface engineering, along with future industrial ...
Xinjie Hou, Yanchang Zhou, Yushan Zhu, Xiao Zhang, Ruiqing Cheng, Jun He   +5 more
wiley   +1 more source

MXene‐Based Flexible Memory and Neuromorphic Devices

Small, EarlyView.
The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Yan Yan, Shuangmei Xue, Kui Zhou, Meng Zhang, Yutong Zhang, Qi‐Jun Sun, Yi Liu, Vellaisamy A. L. Roy, Ye Zhou, Su‐Ting Han   +13 more
wiley   +1 more source

Physical Reservoir based on a Leaky-FeFET Using the Temporal Memory Effect

In this work, a leaky-Ferroelectric Field Effect Transistor (FeFET) neuron is introduced as a physical reservoir in a reservoir computing scheme. Compared to a conventional FeFET reservoir control sample, which did not show leaky behavior, the proposed ...
Kang, Changyeon, Park, Youngkeun, Shin, Eui Joong, Cho, Byung-Jin, Lee, Gyusoup, Kim, Seongho   +5 more
core   +1 more source

Polymeric gate dielectric interlayer of cross-linkable poly(styrene-r-methylmethacrylate) copolymer for ferroelectric PVDF-TrFE field effect transistor memory

, 2009
A new polymeric gate dielectric interlayer of a cross-linkable poly(styrene-random-methylmethacrylate) copolymer is introduced with a good thermal and chemical resistance in bottom gate Ferroelectric Field Effect Transistor (FeFET) memory with pentacene ...
Park, Cheolmin, Chang, Jiyoun, Kang, Seok Ju, Ryu, Du Yeol, Jeong, HJ, Shin, Chang Hak, Park, Youn Jung, Hawker, CJ, Ryu, DY, Shin, CH, Chang, JY, Russell, TP, Hawker, Craig J., Kang, SJ, Park, YJ, Park, C, Jeong, Hee June, Kim, KJ, Kim, Kap Jin, Russell, Thomas P.   +19 more
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Machine Learning-Assisted Statistical Variation Analysis of Ferroelectric Transistor: From Experimental Metrology to Adaptive Modeling

, 2023
20152020A novel machine learning (ML)-assisted approach is proposed for investigating the variability of ferroelectric field-effect transistor (FeFET) to shorten the loop of technology pathfinding. To quantify the ferroelectric (FE) domain variation, the
Hur, Jae H., Lederer, Maximilian, Yu, Shimeng, Choe, Gihun, Ravindran, Prasanna Venkatesan, Reck, André, Khan, Asif Islam   +6 more
core   +1 more source

Memristors Based on Ferroelectric Cu‐Deficient Copper Indium Thiophosphate for Multilevel Storage and Neuromorphic Computing

Small, EarlyView.
Different from CIPS with threshold switching behaviors, Cu‐deficient CIPS* shows stable non‐volatile digital and analog RS. Owing to the formation of metallic IPS at the LRS, CIPS* memristors demonstrate high ON/OFF ratio and endurance stability, which can be utilized to implement multilevel storage.
Mengdie Li, Yanyan He, Chengyang Wang, Weng Fu Io, Feng Guo, Wenjing Jie, Jianhua Hao   +6 more
wiley   +1 more source

Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories

Advanced Materials Interfaces, Volume 13, Issue 11, 9 June 2026.
This review summarizes engineering strategies for HfO2 based ferroelectric memories with focus on FeCAP and FeFET structures. It describes how dopant design, stress effects, and interface engineering improve the bulk ferroelectric response. It further discusses how channel engineering supports reliable memory characteristics and scalable integration ...
Eunjin Kim, Jiyong Woo
wiley   +1 more source

High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics

Nature Communications
With the development of wearable devices and hafnium-based ferroelectrics (FE), there is an increasing demand for high-performance flexible ferroelectric memories.
Qingxuan Li, Siwei Wang, Zhenhai Li, Xuemeng Hu, Yongkai Liu, Jiajie Yu, Yafen Yang, Tianyu Wang, Jialin Meng, Qingqing Sun, David Wei Zhang, Lin Chen   +11 more
doaj   +1 more source

Switching Characteristics of Ferroelectric Transistor Inverters

, 2010
This paper presents the switching characteristics of an inverter circuit using a ferroelectric field effect transistor, FeFET. The propagation delay time characteristics, phl and plh are presented along with the output voltage rise and fall times, rise ...
Ho, Fat D., MacLeod, Todd C., Laws, Crystal, Mitchell, Coey   +3 more
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