Results 91 to 100 of about 15,744,307 (196)

Physics of Organic Ferroelectric Field-Effect Transistors [PDF]

, 2011
Most of the envisaged applications of organic electronics require a nonvolatile memory that can be programmed, erased, and read electrically. Ferroelectric field-effect transistors (FeFET) are especially suitable due to the nondestructive read-out and ...
Blom, P.W.M., Dago M. de Leeuw, Asadi, Kamal, Brondijk, Jakob J., Asadi, Kamal,, Blom, Paul W. M., de Leeuw, Dago M., Jakob J. Brondijk, Asadi, K., Brondijk, Jakob J.,, Brondijk, J.J., Leeuw, Dago M. de,, Kamal Asadi, Paul W. M. Blom, Blom, Paul W.M.,, Leeuw, D.M. de   +15 more
core   +2 more sources

Ferroelectric-Gated All 2D Field-Effect Transistors with Sub-60 mV/dec Subthreshold Swing

, 2023
With the continuous scaling down of the modern integrated circuits, conventional metal-oxide-semiconductor field effect transistors are becoming inefficient due to various nonideal effects such as enhanced short-channel effects.
Zhongyang Liu, Zhongyang Liu (1863094), Mingjie Li (754176), Mingjie Li, Yingtao Ding (13144818), Xiao Liu, Zhiming Chen, Xiao Liu (65413), Zhifang Liu, Zhifang Liu (439137), Yilin Sun, Yingtao Ding, Yilin Sun (793391), Zhiming Chen (1313025)   +13 more
core   +1 more source

Correlation between the macroscopic ferroelectric material properties of Si:HfO2 and the statistics of 28nm FeFET memory arrays

, 2022
S.42-51With the discovery of ferroelectric hafnium oxide (FE-HfO2), the ferroelectric field effect transistor (FeFET), a long-term contender for non-volatile data storage, has finally managed to scale to the 2x nm technology node. Here for the first time,
Flachowsky, S., Mikolajick, T., Polakowski, P., Mueller, S., Paul, J., Slesazeck, S., Müller, J., Henker, S., Smith, E.   +8 more
core   +1 more source

Ferroelectricity and Ferroionic Dynamics in Two‐Dimensional CuInP2S6

Information &Functional Materials, EarlyView.
The coupled dynamics of ferroelectric polarization and Cu‐ion migration endow CuInP2S6 with unique ferroionic functionalities. This review connects structure, switching mechanisms, and device applications to provide a unified perspective on two‐dimensional ferroionic materials.
Shangsheng Li, Shiyu Wang, Xiongfeng Wang, Qinglin Du, Ruochen Shangguan, Guoqiang Xi, Lin Wang, Wugang Liao   +7 more
wiley   +1 more source

MXene‐Based Flexible Memory and Neuromorphic Devices

Small, EarlyView.
The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Yan Yan, Shuangmei Xue, Kui Zhou, Meng Zhang, Yutong Zhang, Qi‐Jun Sun, Yi Liu, Vellaisamy A. L. Roy, Ye Zhou, Su‐Ting Han   +13 more
wiley   +1 more source

Memristors Based on Ferroelectric Cu‐Deficient Copper Indium Thiophosphate for Multilevel Storage and Neuromorphic Computing

Small, EarlyView.
Different from CIPS with threshold switching behaviors, Cu‐deficient CIPS* shows stable non‐volatile digital and analog RS. Owing to the formation of metallic IPS at the LRS, CIPS* memristors demonstrate high ON/OFF ratio and endurance stability, which can be utilized to implement multilevel storage.
Mengdie Li, Yanyan He, Chengyang Wang, Weng Fu Io, Feng Guo, Wenjing Jie, Jianhua Hao   +6 more
wiley   +1 more source

Ferroelectric Polarization Enabled Threshold Voltage Modulation in High Electron Mobility Transistor

Advanced Functional Materials, Volume 36, Issue 73, 10 September 2026.
A comprehensive model is developed to capture the coupled electrostatics of a ferroelectric capacitor and a metal‐insulator‐semiconductor high electron mobility transistor (MISHEMT) connected in ferroelectric‐metal high electron mobility transistor (FeMHEMT) configuration.
Wentian Gao, Andre Wachowiak, Thomas Mikolajick, Uwe Schroeder, Roberto Guido   +4 more
wiley   +1 more source

High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics

Nature Communications
With the development of wearable devices and hafnium-based ferroelectrics (FE), there is an increasing demand for high-performance flexible ferroelectric memories.
Qingxuan Li, Siwei Wang, Zhenhai Li, Xuemeng Hu, Yongkai Liu, Jiajie Yu, Yafen Yang, Tianyu Wang, Jialin Meng, Qingqing Sun, David Wei Zhang, Lin Chen   +11 more
doaj   +1 more source

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

Dual‐logic‐in‐memory implementation with orthogonal polarization of van der Waals ferroelectric heterostructure

InfoMat
The rapid advancement of AI‐enabled applications has resulted in an increasing need for energy‐efficient computing hardware. Logic‐in‐memory is a promising approach for processing the data stored in memory, wherein fast and efficient computations are ...
Jingjie Niu, Sumin Jeon, Donggyu Kim, Sungpyo Baek, Hyun Ho Yoo, Jie Li, Ji‐Sang Park, Yoonmyung Lee, Sungjoo Lee   +8 more
doaj   +1 more source