Results 101 to 110 of about 15,744,307 (196)
Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses
Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol +7 more
wiley +1 more source
FeFET Based Nonvolatile TCAM and DRAM Development [PDF]
, 2018 Ferroelectric Field Effect Transistor (FeFET) is a promising nonvolatile device which provides high integration density, fast programming speed, and excellent CMOS compatibility.
Bayram, Ismail
core
Ferroelectric-gate field effect transistor memories: device physics and applications
, 2020 This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory
Sakai, Shigeki +4 more
core +1 more source
Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems
Advanced Electronic MaterialsThe discovery of ferroelectricity in hafnium oxide has propelled ferroelectric devices to the forefront of nanoelectronics, offering distinct advantages over alternative technologies.
David Lehninger +8 more
doaj +1 more source
Design and Analysis of an Ultra-Dense, Low-Leakage, and Fast FeFET-Based Random Access Memory Array
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019 High static power associated with static random access memory (SRAM) represents a bottleneck in increasing the amount of on-chip memory. Novel, emerging nonvolatile memories such as spintransfer torque magnetic random access memory (STT-RAM), resistive ...
Dayane Reis +11 more
doaj +1 more source
Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram +10 more
wiley +1 more source
Gas sensing using an organic/silicon hybrid field-effect transistor [PDF]
, 1996 This thesis describes the fabrication and properties of novel organic/silicon hybrid field-effect transistor gas sensors. Whilst most of the work used the emeraldine base form of the conductive polymer polyaniline, the response of a device incorporating ...
Barker, Paul Simon
core
Ferroelectric Field Effect Transistor for Memory and Switch Applications [PDF]
, 2011 Silicon technology has advanced at exponential rates both in performances and productivity through the past four decades. However the limit of CMOS technology seems to be closer and closer and in the future we might see an increasing number of hybrid ...
Salvatore, Giovanni Antonio
core +2 more sources
Ferroelectric HfO2 Thin Films for FeFET Memory Devices [PDF]
, 2016 Silicon-doped hafnium oxide has been shown to exhibit ferroelectric properties under the certain small thicknesses with appropriate applied stress and annealing conditions.
McGlone, Joseph F
core +1 more source
Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.This review explains how atomically thin materials can combine information storage, processing, and mechanical flexibility in neuromorphic devices. It connects material properties and engineering strategies with device architecture, synaptic behavior, and performance under bending.
Junzhe Tang, Letian Dai
wiley +1 more source