Results 101 to 110 of about 553 (192)

Record High Polarization at 2 V and Imprint‐Free Operation in Superlattice HfO2‐ZrO2 by Proper Tuning of Ferro and Antiferroelectricity

Advanced Materials Technologies, Volume 11, Issue 11, 5 June 2026.
Low‐power ferroelectric capacitors, based on superlattice HfO2‐ZrO2 is reported. With proper tuning of ferro and antiferroelectricity, an imprint‐free high switchable polarization charge (2Pr of 76 µC/cm2) is obtained with 2MV/cm leading to linear analog weight update and non‐volatile retention, providing a design guideline for emerging non‐volatile ...
Xinye Li, Padma Srivari, Mari Honkanen, Turkka Salminen, Sayani Majumdar   +4 more
wiley   +1 more source

Dual‐logic‐in‐memory implementation with orthogonal polarization of van der Waals ferroelectric heterostructure

InfoMat
The rapid advancement of AI‐enabled applications has resulted in an increasing need for energy‐efficient computing hardware. Logic‐in‐memory is a promising approach for processing the data stored in memory, wherein fast and efficient computations are ...
Jingjie Niu, Sumin Jeon, Donggyu Kim, Sungpyo Baek, Hyun Ho Yoo, Jie Li, Ji‐Sang Park, Yoonmyung Lee, Sungjoo Lee   +8 more
doaj   +1 more source

On the Challenges and Design Mitigations of Single Transistor Ferroelectric Content Addressable Memory

112115In this work, we identify the potential challenges of ambipolar ferroelectric field effect transistor (FeFET) in building a single transistor CAM array to perform parallel hamming distance (HD) computations.
Yin, Xunzhao, Kämpfe, Thomas, Xu, Haotian, Zhuo, Cheng, Ni, Kai, Yang, Jiangyi   +5 more
core   +1 more source

Performance Evaluation and Improvement of Ferroelectric Field-Effect Transistor Memory [PDF]

, 2015
Flash memory is reaching scaling limitations rapidly due to reduction of charge in floating gates, charge leakage and capacitive coupling between cells which cause threshold voltage fluctuations, short retention times, and interference.
Yu, Hyung Suk
core  

Enhanced organic ferroelectric field effect transistor characteristics with strained poly(vinylidene fluoride-trifluoroethylene) dielectric

, 2008
Poly(vinylidene fluoride-trifluoroethylene) (70–30 mol%) was used as the functional dielectric layer in organic ferroelectric field effect transistors (FeFET) for non-volatile memory applications.
Nguyen, Chien A., Mhaisalkar, Subodh Gautam, Lee, Pooi See, Ma, Jan   +3 more
core   +1 more source

Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems

Advanced Electronic Materials
The discovery of ferroelectricity in hafnium oxide has propelled ferroelectric devices to the forefront of nanoelectronics, offering distinct advantages over alternative technologies.
David Lehninger, Franz Müller, Yannick Raffel, Shouzhuo Yang, Markus Neuber, Sukhrob Abdulazhanov, Thomas Kämpfe, Konrad Seidel, Maximilian Lederer   +8 more
doaj   +1 more source

Scaling of the ferroelectric field effect transistor and programming concepts for non-volatile memory applications

, 2005
The importance of non-volatile memory for storage of digital information is without question. Research over the years has led to many different types of memory, each tailored to a specific need.
Fitsilis, Michael
core  

A High-Efficiency Charge-Domain Compute-in-Memory 1F1C Macro Using 2-bit FeFET Cells for DNN Processing

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
This article introduces a 1FeFET-1Capacitance (1F1C) macro based on a 2-bit ferroelectric field-effect transistor (FeFET) cell operating in the charge domain, marking a significant advancement in nonvolatile memory (NVM) and compute-in-memory (CIM ...
Nellie Laleni, Franz Muller, Gonzalo Cunarro, Thomas Kampfe, Taekwang Jang   +4 more
doaj   +1 more source

Optimizing electrochemical and ferroelectric synaptic devices: from material selection to performance tuning

Neuromorphic Computing and Engineering
Neuromorphic hardware systems emulate the parallel neural networks of the human brain, and synaptic weight storage elements are crucial for enabling energy-efficient information processing.
Eunjin Kim, Seonuk Jeon, Hyoungjin Park, Jiae Jeong, Hyeonsik Choi, Yunsur Kim, Jihyun Kim, Seokjae Lim, Kibong Moon, Jiyong Woo   +9 more
doaj   +1 more source

FeFET-based MirrorBit cell for High-density NVM storage

, 2023
HfO2-based Ferroelectric field-effect transistor (FeFET) has become a center of attraction for non-volatile memory applications because of their low power, fast switching speed, high scalability, and CMOS compatibility. In this work, we show an n-channel
Srinu, Rowtu, Lashkare, Sandip, Singh, Ajay Kumar, Saraswat, Vivek, Beyer, Sven, Dünkel, Stefan, Mulaosmanovic, Halid, Meihar, Paritosh, Ganguly, Udayan   +8 more
core