Results 121 to 130 of about 553 (192)

Ferroelectric Field-Effect Transistors in Analog Applications: Demonstrated in Time-Domain Neuromorphic Computing Cells

In response to diminishing improvements from transistor scaling, the semiconductor field has shifted its focus to architectural innovation and emerging device technologies.
O\u27Donnell, Jacob
core  

Endurance Paradox in Hafnium-Oxide-Based Silicon-Channel Ferroelectric Transistors. [PDF]

ACS Appl Mater Interfaces
Das A, Paul A, Tewari M, Lou ZF, Chang YT, Senapati A, Kumar G, Raffel Y, Useinov A, Tumilty N, Wu TL, Lashkare S, Agarwal T, Lee MH, De S.   +14 more
europepmc   +1 more source

TiO₂ nanolayer-assisted top-interface engineering for disturbance-free FeFETs: a blueprint for future van der Waals memory. [PDF]

Nano Converg
Kang H, Kwak J, Kim G, Lee S, Kim Y, Park S, Lim S, Seo K, Kim W, Ha D, Ahn J, Jeon S.   +11 more
europepmc   +1 more source

Impact of ferroelectric polarization dynamics on thermal reliability in Ferro-FinFETs. [PDF]

Discov Nano
Ma W, Peng Y, Wu Q, Zhang S, Sun L, Xiao W, Zhang C, Ma X, Hao Y.   +8 more
europepmc   +1 more source

Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films

, 2015
Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work.
Yurchuk, Ekaterina
core  

Modelling and Design of Short Channel Ferroelectric FETs with a Metal Interlayer Easing the Multilevel Operation

This work presents a simulation study of a ferroelectric field effect transistor (FeFET), which leverages a metal interlayer to achieve a multilevel operation thanks to the interplay between the ferroelectric polarization and the charge stored in the ...
Esseni, David, Lizzit, Daniel, Rossi, Chiara   +2 more
core   +1 more source

Coupled polarization dynamics and charge tunneling enable reconfigurable heterojunctions. [PDF]

Nat Commun
Li C, Yu T, Zhang Z, Deng Q, Hui F, Wang Z, Lanza M, Sun L.   +7 more
europepmc   +1 more source

Hafnium-Based Ferroelectric Post-Moore Electronics: Device Physics, Integration Architectures, and Neuromorphic System Implementation. [PDF]

Nanomicro Lett
Chen X, Wang Z, Meng J, Wang T.
europepmc   +1 more source

Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and Computing. [PDF]

ACS Nano
Das A, Senapati A, Kumar G, Lou ZF, Müller J, Maskeen JS, Chang YT, Tewari M, Agarwal A, Paul A, Raffel Y, Maikap S, Kao KH, Agarwal T, Lashkare S, Lu D, Larrieu G, Lee MH, De S.   +18 more
europepmc   +1 more source

A machine-learning virtual source model for nanoscale transistors. [PDF]

Sci Rep
Yang Q, Guo J.
europepmc   +1 more source