Results 121 to 130 of about 15,744,307 (196)

Optimizing electrochemical and ferroelectric synaptic devices: from material selection to performance tuning

open access: yesNeuromorphic Computing and Engineering
Neuromorphic hardware systems emulate the parallel neural networks of the human brain, and synaptic weight storage elements are crucial for enabling energy-efficient information processing.
Eunjin Kim   +9 more
doaj   +1 more source

Ferroelectric compute-in-memory annealer for combinatorial optimization problems

open access: yesNature Communications
Computationally hard combinatorial optimization problems (COPs) are ubiquitous in many applications. Various digital annealers, dynamical Ising machines, and quantum/photonic systems have been developed for solving COPs, but they still suffer from the ...
Xunzhao Yin   +13 more
doaj   +1 more source

Ferroelectric-gate field effect transistor memories: device physics and applications

open access: yes, 2016
This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory
Sakai, Shigeki   +4 more
core   +1 more source

Ferroelectric 2D SnS2 Analog Synaptic FET

open access: yesAdvanced Science
In this study, the development and characterization of 2D ferroelectric field‐effect transistor (2D FeFET) devices are presented, utilizing nanoscale ferroelectric HfZrO2 (HZO) and 2D semiconductors.
Chong‐Myeong Song   +3 more
doaj   +1 more source

Reconfigurable Ferroelectric Bandpass Filter With Low-Frequency Noise Analysis for Intracardiac Electrogram Monitoring

open access: yesIEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Implantable cardioverter defibrillators (ICDs) provide real-time monitoring and immediate defibrillation for life-threatening arrhythmias. However, the intracardiac electrogram (IEGM) acquisition of ICDs faces stringent constraints, including power ...
Jianwei Jia   +4 more
doaj   +1 more source

Multilevel Operation in Scaled Back-End-of-Line Ferroelectric FETs With a Metal Interlayer

open access: yesIEEE Access
Multi-level operation, conventionally obtained in ferroelectric devices thanks to a domain-dependent inhomogeneous polarization, poses a big challenge for highly-scaled ferroelectric devices, where the number of ferroelectric domains is drastically ...
Chiara Rossi   +2 more
doaj   +1 more source

Light polarization-based electro-optic memory. [PDF]

open access: yesNat Commun
Wan Q   +9 more
europepmc   +1 more source

Ferroelectric Field-Effect Transistors in Analog Applications: Demonstrated in Time-Domain Neuromorphic Computing Cells

open access: yes
In response to diminishing improvements from transistor scaling, the semiconductor field has shifted its focus to architectural innovation and emerging device technologies.
O\u27Donnell, Jacob
core   +1 more source

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