Results 141 to 150 of about 15,744,307 (196)

Coupled polarization dynamics and charge tunneling enable reconfigurable heterojunctions. [PDF]

Nat Commun
Li C, Yu T, Zhang Z, Deng Q, Hui F, Wang Z, Lanza M, Sun L.   +7 more
europepmc   +1 more source

Self-Powered Neuromorphic Systems Based on Tribotronics Synaptic Devices. [PDF]

Small
Shrestha K, Akbari MK, Anbari AP, Pandey P, Zhuiykov S.   +4 more
europepmc   +1 more source

High-precision hyperdimensional computing enabled by in-memory computing using high-polarization ferroelectric Hf_0.5Zr_0.5O₂ capacitors. [PDF]

Microsyst Nanoeng
Paasio E, Thomann S, Anu A, Li X, Ranta R, Srivari P, Muhammad S, Mazumder S, Mariam J, Padovani A, Amrouch H, Thareja G, Majumdar S.   +12 more
europepmc   +1 more source

Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and Computing. [PDF]

ACS Nano
Das A, Senapati A, Kumar G, Lou ZF, Müller J, Maskeen JS, Chang YT, Tewari M, Agarwal A, Paul A, Raffel Y, Maikap S, Kao KH, Agarwal T, Lashkare S, Lu D, Larrieu G, Lee MH, De S.   +18 more
europepmc   +1 more source

Recent progress in HfO₂-based ferroelectric devices with oxide semiconductor channels: a comprehensive review. [PDF]

Nanoscale Adv
Kang HY, Shin YH, Kim DE, Kwon DW, Jeong JK.   +4 more
europepmc   +1 more source

A machine-learning virtual source model for nanoscale transistors. [PDF]

Sci Rep
Yang Q, Guo J.
europepmc   +1 more source

Integration of Freestanding High-k Oxide Membranes for 2D Ferroelectric Field-Effect Transistors. [PDF]

Adv Sci (Weinh)
Guo Z, Sha X, Xu F, Huang G, Zhang J, Mou Y, Zhao G, Liu J, Lan Q, Song W, Zhang C, Huang H, Zheng C, Wang L, Guo H, Shen J, Shi W.   +16 more
europepmc   +1 more source

Recent Advances and Perspectives on Field-Effect Transistors for Artificial Visual Neuromorphic Systems. [PDF]

Adv Sci (Weinh)
Yaqian L, Menghua L, Yihang X, Manyu Z, Chunkang L, Xiaozhou L, Yi D, Lingli W, Liying J, Yuanyuan H, Huipeng C, Lang J.   +11 more
europepmc   +1 more source

Two-Dimensional Indium Selenide for Next-Generation Electronics. [PDF]

Int J Mol Sci
Lee D.
europepmc   +1 more source