Results 131 to 140 of about 553 (192)

Recent progress in HfO₂-based ferroelectric devices with oxide semiconductor channels: a comprehensive review. [PDF]

Nanoscale Adv
Kang HY, Shin YH, Kim DE, Kwon DW, Jeong JK.   +4 more
europepmc   +1 more source

Integration of Freestanding High-k Oxide Membranes for 2D Ferroelectric Field-Effect Transistors. [PDF]

Adv Sci (Weinh)
Guo Z, Sha X, Xu F, Huang G, Zhang J, Mou Y, Zhao G, Liu J, Lan Q, Song W, Zhang C, Huang H, Zheng C, Wang L, Guo H, Shen J, Shi W.   +16 more
europepmc   +1 more source

Recent Advances and Perspectives on Field-Effect Transistors for Artificial Visual Neuromorphic Systems. [PDF]

Adv Sci (Weinh)
Yaqian L, Menghua L, Yihang X, Manyu Z, Chunkang L, Xiaozhou L, Yi D, Lingli W, Liying J, Yuanyuan H, Huipeng C, Lang J.   +11 more
europepmc   +1 more source

Ferroelectric-based Pockels photonic memory. [PDF]

Nat Commun
Xu Z, Chen CK, Lin HL, Sivan M, Zamburg E, Lee JY, Venkatesan S, Danner A, Thean AV.   +8 more
europepmc   +1 more source

Advancing the Frontiers of HfO₂-Based Ferroelectric Memories: Innovative Concepts from Materials to Applications. [PDF]

Adv Mater
Zhou Z, Li L, Feng Y, Wang X, Zheng Z, Jiao L, Zheng H, Shi Y, Ang KW, Gong X.   +9 more
europepmc   +1 more source

Recent advances in ferroelectric materials, devices, and in-memory computing applications. [PDF]

Nano Converg
Hwang H, Youn S, Kim H.
europepmc   +1 more source

Polarity-dependent ferroelectric modulations in two-dimensional hybrid perovskite heterojunction transistors. [PDF]

Nat Commun
Li E, He W, Wang R, Zhang C, Zhou H, Liu Y, Yuan Y, Loh KP, Chu J, Li W.   +9 more
europepmc   +1 more source

Back-Gated WS₂-Enhanced Barium Titanate Phototransistor with Polarization-Controlled UV Responsivity and Enhanced Thermal Stability. [PDF]

ACS Appl Mater Interfaces
Padhi RR, Das C, Feng GH.
europepmc   +1 more source

Homogeneous integration of two-dimensional material-based optoelectronic neurons and ferroelectric synapses for neuromorphic vision. [PDF]

Nat Commun
Wang J, Liu K, Tiw PJ, He D, Yu L, Wang B, Bai J, Zhang T, Shan X, Yang Y, Wang Y, Wang Y, Tao Y, Zhang X, Yang Y.   +14 more
europepmc   +1 more source

Proximity-Induced Ferroelectric Switching in Wurtzite/Fluorite Bilayers for High-Performance Ferroelectric Field-Effect Transistor. [PDF]

Adv Mater
Kim KD, Yeom MK, Park HS, Jeon G, Hwang CS.   +4 more
europepmc   +1 more source